Patents by Inventor Mvs Chandrasekhar

Mvs Chandrasekhar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8309942
    Abstract: A self-powered sensor (e.g., 100, 180, 220, 400) can wake-up systems requiring a trigger signal to wake-up circuits or systems in power-sleep mode, conserving the battery power for emergency computations and communications. In a humidity sensor embodiment 100, radioisotope generated voltage biases are employed to power sensor capacitors to realize self-powered sensors. A first self-powered capacitor biasing architecture 160 is based on changes in the leakage resistance of the polymer capacitor 110, and a second self-powered capacitor biasing architecture 140 uses changes in the capacitance of the polymer capacitor. Another sensor embodiment uses changes in the capacitance or leakage resistance of the sensor capacitor to modulate conductance of a MOSFET 114, realizing an easily readable electronic output signal. A temperature sensor embodiment 180 and a MEMS cantilever structure based fissile material proximity sensor embodiment 400 are also disclosed.
    Type: Grant
    Filed: September 18, 2007
    Date of Patent: November 13, 2012
    Assignee: Cornell Research Foundation
    Inventors: Amit Lal, Rajesh Duggirala, Mvs Chandrasekhar
  • Publication number: 20100213379
    Abstract: A self-powered sensor (e.g., 100, 180, 220, 400) can wake-up systems requiring a trigger signal to wake-up circuits or systems in power-sleep mode, conserving the battery power for emergency computations and communications. In a humidity sensor embodiment 100, radioisotope generated voltage biases are employed to power sensor capacitors to realize self-powered sensors. A first self-powered capacitor biasing architecture 160 is based on changes in the leakage resistance of the polymer capacitor 110, and a second self-powered capacitor biasing architecture 140 uses changes in the capacitance of the polymer capacitor. Another sensor embodiment uses changes in the capacitance or leakage resistance of the sensor capacitor to modulate conductance of a MOSFET 114, realizing an easily readable electronic output signal. A temperature sensor embodiment 180 and a MEMS cantilever structure based fissile material proximity sensor embodiment 400 are also disclosed.
    Type: Application
    Filed: September 18, 2007
    Publication date: August 26, 2010
    Inventors: Amit Lal, Rajesh Duggirala, Mvs Chandrasekhar