Abstract: A method for forming a film on a substrate comprising: heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof.

Abstract: There are provided methods for the real-time radiation-assisted fabrication of freeform three-dimensional structures. For example, one of these methods comprise depositing on a substrate, by means of nozzle, a filament comprising a curable polymer, while exposing the filament to a radiation so as to cure the curable polymer, and while moving the substrate and the nozzle, with respect to one another, according to the x-axis, y-axis, and z-axis or at least two of these axes. Such a method permits to obtain a freeform three-dimensional structure having at least one point of contact with the substrate.