Abstract: A nonvolatile memory device includes a memory cell array including a plurality of memory cells that are programmed based on a high voltage, a high voltage generator to generate the high voltage by boosting an input voltage based on a pumping clock, a pumping clock generator to generate the pumping clock, a high voltage detector to generate a detection signal by comparing an adjustment voltage with a reference voltage, a programming current controller to adjust a programming current flowing through each of selected memory cells of the plurality of memory cells; and a control logic to adjust a frequency of the pumping clock and a current driving capability of the programming current based on the detection signal during a programming period with respect to the selected memory cells. The detection signal includes information indicating whether the high voltage reaches to a target voltage.

Abstract: A nonvolatile memory device includes a memory cell array including a plurality of memory cells that are programmed based on a high voltage, a high voltage generator to generate the high voltage by boosting an input voltage based on a pumping clock, a pumping clock generator to generate the pumping clock, a high voltage detector to generate a detection signal by comparing an adjustment voltage with a reference voltage, a programming current controller to adjust a programming current flowing through each of selected memory cells of the plurality of memory cells; and a control logic to adjust a frequency of the pumping clock and a current driving capability of the programming current based on the detection signal during a programming period with respect to the selected memory cells. The detection signal includes information indicating whether the high voltage reaches to a target voltage.

Abstract: A non-volatile memory device includes a memory cell array including a plurality of memory cells, wherein at least one selected memory cell that is selected from among the plurality of memory cells is programmed based on a high voltage, a high voltage generator configured to generate the high voltage by boosting an input voltage based on a pumping clock, a pumping clock generator configured to generate the pumping clock, a program current controller configured to adjust a program current flowing in the at least one selected memory cells, and a control logic configured to control a frequency of the pumping clock and an amount of the program current based on a time in a program section in which the at least one selected memory cell is programmed.

Abstract: A voltage generation circuit and a semiconductor device including the same are provided. The voltage generation circuit includes charge pumps connected in series, each charge pump including a charge transfer transistor, a controller, and a bias circuit. The charge transfer transistor has a drain, a source that receives a first clock, and a gate that is connected to a first node and that receives a second clock opposite to the first clock. The controller includes a control transistor having a source connected to the first node, a gate coupled to the first clock, and a drain connected to the gate of the control transistor. The bias circuit biases the charge transfer transistor.

Abstract: A non-volatile memory device includes a memory cell array including a plurality of memory cells, wherein at least one selected memory cell that is selected from among the plurality of memory cells is programmed based on a high voltage, a high voltage generator configured to generate the high voltage by boosting an input voltage based on a pumping clock, a pumping clock generator configured to generate the pumping clock, a program current controller configured to adjust a program current flowing in the at least one selected memory cells, and a control logic configured to control a frequency of the pumping clock and an amount of the program current based on a time in a program section in which the at least one selected memory cell is programmed.