Abstract: An etching plasma processing apparatus including a consumable metal member is disclosed. The etching plasma processing apparatus includes a vacuum chamber, a substrate support member arranged inside the chamber, a gas supply member for injecting gas into the chamber, a consumable part arranged inside the chamber and generating a metallic byproduct containing ions or radicals of a first metal when plasma is generated inside the chamber, a first electrode for applying power to generate plasma inside the chamber, a second electrode facing the first electrode, and a power supply supplying power to the first and second electrodes.

Abstract: Provided are a control unit that predicts the life of an inkjet head unit and maximizes its life to be used, and a substrate treating apparatus including the same. The control unit performs maintenance of an inkjet head unit for discharging a substrate treatment liquid onto a substrate and comprises a count module for counting the number of discharges for each nozzle of the inkjet head unit, a comparison module for comparing the number of discharges with a reference value to determine whether the number of discharges is equal to or greater than the reference value, and an evaluation module for evaluating whether a life of the inkjet head unit has reached a usable life based on whether the number of discharges of each nozzle is equal to or greater than the reference value.

Abstract: Provided is a method for areal selective forming of a thin film according to an exemplary embodiment of the present disclosure including: a substrate preparation step of supplying and stabilizing a substrate including a growth area and a non-growth area into a chamber; a precursor supply step of supplying a metal precursor compound into the chamber and adsorbing the metal precursor compound to the substrate; a purge step of purging the inside of the chamber; and a thin film formation step of supplying a reaction material into the chamber to react with the metal precursor compound and form a thin film, in which the metal precursor compound is a Group 5 metal precursor compound represented by Chemical Formula 1 below:

Abstract: Semiconductor memory devices including capacitors and methods for manufacturing thereof. The semiconductor memory device may include a substrate, an element isolation pattern defining an active area in the substrate, a first conductive pattern on the substrate and the element isolation pattern, and extending in a first direction, wherein the first conductive pattern is connected to a first portion of the active area, a capacitor structure on the substrate and the element isolation pattern and connected to a second portion of the active area, a gate trench defined in the substrate and the element isolation pattern and extending in a second direction, wherein a first trench width of a portion of the gate trench in the active area is greater than a second trench width of a portion of the gate trench in the element isolation pattern.

Abstract: A static electricity visualization apparatus capable of visually identifying a measured level of static electricity is provided.

Abstract: The present invention relates to a conversion device for converting a treatment beam for treating a lesion of a subject, comprising: a collimator unit to which the treatment beam is incident and which has a plurality of slits; and a scattering unit that scatters the treatment beam that has passed through the collimator unit.

Abstract: A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.

Abstract: A display device includes a light emitting element, a first transistor, a second transistor, and a diode. The first transistor may control a driving current flowing to the light emitting element depending on a voltage applied to a gate electrode of the first transistor. The second transistor is electrically connected between the gate electrode of the first transistor and a first electrode of the first transistor. A first electrode of the diode is electrically connected to a first electrode of the second transistor. A second electrode of the diode is electrically connected to the gate electrode of the first transistor.

Abstract: The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.

Abstract: A display device includes a substrate, a first semiconductor pattern, a first gate insulating film covering the first semiconductor pattern, a first conductive layer and a second semiconductor pattern are on the first gate insulating film, a second gate insulating film on the second semiconductor pattern, a third gate insulating film covering the first gate insulating film and the second gate insulating film, a second conductive layer on the third gate insulating film, an interlayer insulating film covering the second conductive layer, and a third conductive layer on the interlayer insulating film, wherein the first and second semiconductor patterns respectively form semiconductor layers of the first and second transistors, wherein the first conductive layer includes a gate electrode of the first transistor and a first electrode of the capacitor, and wherein the second conductive layer includes a gate electrode of the second transistor and a second electrode of the capacitor.

Abstract: A display device includes a substrate, a first transistor including a channel on the substrate, a first electrode and a second electrode, and a gate electrode overlapping the channel of the first transistor, a first interlayer insulation layer on the first and second electrodes of the first transistor, a second transistor including a channel disposed on the first interlayer insulation layer, a first electrode and a second electrode of the second transistor, and a gate electrode that overlaps the channel of the second transistor, a first connection electrode disposed on the first interlayer insulation layer, and connected with the first electrode of the first transistor, a gate insulation layer disposed between the first interlayer insulation layer and the first connection electrode, and a second connection electrode that connects the first connection electrode and the first electrode of the second transistor.

Abstract: The present invention relates to a polymer rod that shapes emission light emitted from a light source chip into symmetrical light and, more particularly, to a polymer rod that is formed on a light emission part of a laser diode so as to change the shape of emission light.

Abstract: A display device includes a substrate, a first semiconductor pattern on the substrate and including a semiconductor layer of a first transistor, a first gate insulator on the substrate, a first conductive layer on the first gate insulator and including a first gate electrode of the first transistor and a first electrode of the capacitor connected to the first gate electrode of the first transistor, a first interlayer dielectric on the first gate insulator, a second semiconductor pattern on the first interlayer dielectric and including a semiconductor layer of a second transistor and a second electrode of the capacitor, a second gate insulator on the first interlayer dielectric, a second conductive layer on the second gate insulator and including a gate electrode of the second transistor and a third semiconductor pattern between the second semiconductor pattern and any one of the first conductive layer and the second conductive layer.

Abstract: A pixel includes a light emitting element, first through third transistors, sixth through seventh transistors, a ninth transistor, and a capacitor. The first transistor is connected between supply and a second node and controls a driving current supplied to the light emitting element. The second transistor is connected between a third node and a data line. The third transistor is connected between a first node connected to a gate electrode of the first transistor and the second node. The sixth transistor is connected between the supply and a fifth node connected to an electrode of the first transistor. The seventh transistor is connected between the second node and a fourth node connected to an anode of the light emitting element. The ninth transistor is connected between the fifth node and bias. Gate electrodes of the sixth through seventh transistors and the ninth transistor are connected to a same emission line.

Abstract: Provided is display device comprising a substrate; a first semiconductor layer disposed on the substrate and having a plurality of transistors; a second semiconductor layer disposed on the first semiconductor layer and having a plurality of transistors; a first data conductive layer disposed on the second semiconductor layer; a first metal layer disposed on the first data conductive layer; and a second metal layer disposed on the first metal layer, wherein the first metal layer includes a first storage electrode and a first input electrode, the second metal layer includes a second storage electrode and a second input electrode, the first storage electrode and the second storage electrode configure a storage capacitor, and the first input electrode and the second input electrode configure an input capacitor.

Abstract: A pixel includes a light emitting element, first through third transistors, sixth through seventh transistors, a ninth transistor, and a capacitor. The first transistor is connected between supply and a second node and controls a driving current supplied to the light emitting element. The second transistor is connected between a third node and a data line. The third transistor is connected between a first node connected to a gate electrode of the first transistor and the second node. The sixth transistor is connected between the supply and a fifth node connected to an electrode of the first transistor. The seventh transistor is connected between the second node and a fourth node connected to an anode of the light emitting element. The ninth transistor is connected between the fifth node and bias. Gate electrodes of the sixth through seventh transistors and the ninth transistor are connected to a same emission line.

Abstract: A display device includes a substrate, a first semiconductor layer on the substrate, a first gate insulating film on the first semiconductor layer, a first conductive layer on the first gate insulating film and including a first gate electrode and a first electrode of a capacitor connected to the first gate electrode, a second semiconductor layer on the first gate insulating film and at a different layer from the first semiconductor layer, a second gate insulating film on the first conductive layer and the second semiconductor layer, a second conductive layer on the second gate insulating film and including a second gate electrode and a second electrode of the capacitor, a second interlayer insulating film on the second conductive layer, and a third conductive layer on the second interlayer insulating film and including a first source electrode, a first drain electrode, a second source electrode, and a second drain electrode.

Abstract: The present disclosure relates to an aluminum compound, an aluminum-containing film-forming precursor composition including the aluminum compound, and a method of preparing an aluminum-containing film using the aluminum-containing film-forming precursor composition.

Abstract: A display device includes: a bending region including a bending peripheral opening passing through the first interlayer insulating film and the first gate insulating film and a bending opening in the bending peripheral opening and passing through the second interlayer insulating film and the buffer layer to expose the substrate, a first sidewall of the bending peripheral opening includes a side surface of the first interlayer insulating film and a side surface of the first gate insulating film, the second interlayer insulating film covers the first sidewall of the bending peripheral opening, the bending opening includes a second sidewall including a side surface of the buffer layer and a portion of a side surface of the second interlayer insulating film arranged with the side surface of the buffer layer, and the first via layer fills the bending opening.

Abstract: A display device includes a substrate, a first semiconductor pattern, a first gate insulating film covering the first semiconductor pattern, a first conductive layer and a second semiconductor pattern are on the first gate insulating film, a second gate insulating film on the second semiconductor pattern, a third gate insulating film covering the first gate insulating film and the second gate insulating film, a second conductive layer on the third gate insulating film, an interlayer insulating film covering the second conductive layer, and a third conductive layer on the interlayer insulating film, wherein the first and second semiconductor patterns respectively form semiconductor layers of the first and second transistors, wherein the first conductive layer includes a gate electrode of the first transistor and a first electrode of the capacitor, and wherein the second conductive layer includes a gate electrode of the second transistor and a second electrode of the capacitor.