Abstract: A polishing composition and a method of fabricating a semiconductor device using the same, the polishing composition including an abrasive; a first additive that includes a C5 to C30 hydrocarbon including an amide group and a carboxyl group or a C5 to C30 hydrocarbon including two or more amine groups; and a second additive that includes a sulfonic acid, a sulfonate, or a sulfonate salt.

Abstract: The present invention relates to a polishing composition, and more particularly, to a chemical mechanical polishing (CMP) composition used to chemically and mechanically polish a semiconductor wafer. The polishing composition of the present invention, by comprising anion-modified silica polishing particles in which the zeta potential (?) is ??10 mV, can exhibit excellent polishing performance, and more specifically, which can achieve a high polishing rate with respect to an indium-containing polishing substrate, while improving the dispersibility of the composition and reducing residual defects on the substrate.

Abstract: The present invention relates to a method for polishing an insulating film of a semiconductor element, the method comprising polishing an insulating film, which is formed by embedding conductive patterns formed on a substrate, with a polishing slurry composition comprising a polishing agent including cerium oxide particles and an anionic dispersant, and a polishing additive composition comprising an anionic polymer, a cationic compound, a nonionic surfactant, a dishing inhibitor, and an amphoteric ionic compound, wherein the anionic polymer has a polymer distribution index (PDI) of 3.5 to 5.5, to remove a step associated with the insulating film.

Abstract: The present invention relates to a method for polishing an insulating film of a semiconductor element, comprising polishing an insulating film, which is formed by embedding a conductive pattern formed on a substrate, with a polishing slurry composition comprising a polishing agent including polishing particles; and a polishing additive composition comprising a dialkyldiallylammonium halide, a basic amino acid, a non-ionic surfactant, and a pH adjuster, thereby removing a step involved in the insulating film.

Abstract: A polishing composition and a method of fabricating a semiconductor device using the same, the polishing composition including an abrasive; a first additive that includes a C5 to C30 hydrocarbon including an amide group and a carboxyl group or a C5 to C30 hydrocarbon including two or more amine groups; and a second additive that includes a sulfonic acid, a sulfonate, or a sulfonate salt.

Abstract: The present invention relates to a method for polishing an insulating film of a semiconductor element, comprising polishing an insulating film, which is formed by embedding a conductive pattern formed on a substrate, with a polishing slurry composition comprising a polishing agent including polishing particles; and a polishing additive composition comprising a dialkyldiallylammonium halide, a basic amino acid, a non-ionic surfactant, and a pH adjuster, thereby removing a step involved in the insulating film.

Abstract: The present invention relates to a polishing composition, and more particularly, to a chemical mechanical polishing (CMP) composition used to chemically and mechanically polish a semiconductor wafer. The polishing composition of the present invention, by comprising anion-modified silica polishing particles in which the zeta potential (?) is ??10 mV, can exhibit excellent polishing performance, and more specifically, which can achieve a high polishing rate with respect to an indium-containing polishing substrate, while improving the dispersibility of the composition and reducing residual defects on the substrate.

Abstract: The present invention relates to a method for polishing an insulating film of a semiconductor element, the method comprising polishing an insulating film, which is formed by embedding conductive patterns formed on a substrate, with a polishing slurry composition comprising a polishing agent including cerium oxide particles and an anionic dispersant, and a polishing additive composition comprising an anionic polymer, a cationic compound, a nonionic surfactant, a dishing inhibitor, and an amphoteric ionic compound, wherein the anionic polymer has a polymer distribution index (PDI) of 3.5 to 5.5, to remove a step associated with the insulating film.