Abstract: The present disclosure provides a body-insertion device for a body, which comprises a first moving unit for moving an image acquisition unit; an insertion unit; and a second moving unit for moving the insertion unit. The first moving unit comprises at least one of a 1-1 module for moving the image acquisition unit in a 1-1 direction, a 1-2 module for moving the image acquisition unit in a 1-2 direction, and a 1-3 module for moving the image acquisition unit in a 1-3 direction. The second moving unit comprises at least one of a 2-1 module for moving the insertion unit in a 2-1 direction, a 2-2 module for moving the insertion unit in a 2-2 direction, and a 2-3 module for moving the insertion unit in a 2-3 direction.

Abstract: A battery module including a busbar assembly including a busbar, a support film supporting the busbar, and a support plate supporting the support film, and a method for manufacturing the same are disclosed. A battery module includes: a plurality of battery cells arranged in a first direction and each including a cell case and a cell terminal protruding from the cell case; and a busbar assembly including a busbar to allow electrical connection between respective cell terminals of at least one pair of battery cells among the plurality of battery cells, a support film coupled to the busbar to support the busbar, and a support plate coupled to the support film to support the support film.

Abstract: A semiconductor device and a method of forming the semiconductor device are disclosed. The semiconductor memory device having a memory cell, the memory cell includes a lower electrode; a selection element over the lower electrode; a buffer layer over the selection element; a middle electrode over the buffer layer; a memory layer over the middle electrode; and an upper electrode over the memory layer. The buffer layer includes titanium, nitrogen, and oxygen. A titanium content ratio is higher than 1.21 times of a nitrogen content ratio in the buffer layer.

Abstract: A semiconductor device includes a lower interconnection line; a memory cell structure over the lower interconnection line; and an upper interconnection line over the memory cell structure. The memory cell structure includes a first electrode; a selection element over the first electrode; a first carrier tunneling layer over the selection element layer; a second electrode over the first carrier tunneling layer; a memory element layer over the second electrode; and a third electrode over the memory element layer. The first carrier tunneling layer includes an insulating layer doped with at least one pentavalent element.

Abstract: A semiconductor device includes a lower interconnection line, a lower electrode disposed over the lower interconnection line, a first magnetic control layer disposed over the lower electrode, a selection element layer disposed over the first magnetic control layer, a second magnetic control layer disposed over the selection element layer, a memory element layer disposed over the second magnetic control layer, an upper electrode disposed over the memory element layer, and 10 an upper interconnection line disposed over the upper electrode. Each of the first and second magnetic control layers includes at least one of cobalt, iron, nickel, molybdenum, aluminum, chromium, permalloy, supermalloy, an oxide thereof, or a nitride thereof.

Abstract: A selector includes a carbon material that includes carbon and a trivalent element that is chemically bond to cardon; and a dopant material implanted to the carbon material to form trap sites of conductive carriers based on a chemical bond between the carbon and the trivalent element in the carbon. A method for fabricating a selector includes forming a carbon layer that includes carbon; chemically reacting a trivalent element with the carbon in the carbon layer; and implanting a dopant through an ion implantation process.

Abstract: A selector includes a base material including carbon; and a dopant implanted into the base material. A method for fabricating a selector includes forming a carbon layer and implanting a dopant into the carbon layer. A semiconductor device includes a selector pattern including carbon as a base material and a dopant implanted through an ion implantation process; and a memory pattern disposed in an upper portion or a lower portion of the selector pattern.

Abstract: A battery pack and a manufacturing method thereof are disclosed. A battery pack includes a housing, a cell stack inside the housing and including a plurality of battery cells arranged along a first direction, and an end plate between the housing and the cell stack, and the end plate includes a first plate configured to contact the housing, a second plate arranged to face the first plate and configured to contact or separate from the cell stack while being moved in a direction parallel to the first direction, a chamber between the first plate and the second plate, and a spacer located inside the chamber such that the second plate contacts the cell stack.

Abstract: A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a selector pattern including an insulating material doped with a dopant to exhibit different electrical conducting characteristics in response to an applied voltage with respect to a threshold voltage, wherein the selector pattern includes a first region that is formed in an edge extending from a sidewall of the selector pattern and a second region that has a sidewall in contact with the first region, and a concentration of the dopant in the first region is different from a concentration of the dopant in the second region.

Abstract: The present disclosure relates to a pharmaceutical composition comprising chiral nanozyme and method of preventing or treating proliferative diseases using the same. A first nanozyme and/or a second nanozyme according to embodiments of the present disclosure has a chiral structure, and their enzymatic activity is maximized when circularly polarized light with the same directionality as the first nanozyme and/or the second nanozyme is irradiated.

Abstract: The present disclosure provides a computer-implemented method which comprises a first step of obtaining an image data of the body portion from an ultrasound probe; a second step of analyzing the image data by use of machine learning and identifying a target and an evasion object; and a third step of determining the location of a final target, with reference to the information of the identified target and the evasion object. The final target is determined by at least one of a first information relating to the size of the target, a second information relating to the depth of the target, and a third information relating to the existence of an object in the straight path between the target and skin surface.

Abstract: A semiconductor device includes a plurality of memory cells. Each memory cell includes: a first electrode layer; a second electrode layer; a memory layer electrically connected to the second electrode layer and configured to store data; a selector layer interposed between the first electrode layer and the second electrode layer and configured to control an access to the memory layer, the selector layer including an insulating material layer doped with a dopant, wherein at least one of the first electrode layer and the second electrode layer includes a first sub-electrode layer, and a second sub-electrode layer interposed between the first sub-electrode layer and the selector layer and including a material having a work function greater than a work function of the first sub-electrode layer.

Abstract: A semiconductor device includes a plurality of memory cells. Each memory cell includes: a memory layer configured to store data; and a selector layer configured to control an access to the memory layer, wherein the selector layer includes a layer which includes an insulating material and a porous material that are mixed, and a dopant that is present in the layer and breaks a bond between constituent elements of the insulating material.

Abstract: This invention relates to a solidifying agent for solidifying radioactive waste, and more particularly to a solidifying-agent composition for solidifying radioactive waste, including alumina cement and a gypsum powder. The solidifying-agent composition including alumina cement and a gypsum powder is capable of effectively minimizing an increase in the volume of a solidified radioactive waste product to a level satisfying physical and chemical safety regulations upon the solidification of radioactive waste.

Abstract: A method for fabricating an electrode may include: forming a carbon layer; performing an ion beam etch process to planarize and harden a surface of the carbon layer on the carbon layer; and performing an impurity doping process to dope an impurity into the carbon layer.

Abstract: A method for manufacturing a semiconductor device is provided.

Abstract: Disclosed is an air supply device including an intake module configured to introduce air from the outside, a compression module configured to receive the air discharged from the intake module and compress the air, a cooling module configured to cool the air compressed by and discharged from the compression module, and a control module configured to control an operation of the compression module, in which a part of the air in the intake module cools the control module by exchanging heat with the control module.

Abstract: Embodiments provide an etchant composition that includes about 5.0 to about 20.0 wt % of a persulfate, about 0.01 to about 15.0 wt % of a sulfonic acid, about 0.01 to about 2.0 wt % of a fluorine compound, about 0.01 to about 5.0 wt % of a 4-nitrogen cyclic compound, about 0.01 to about 1.0 wt % of an amino acid including a hydrophobic group having at least two carbon atoms, and water A weight ratio of the amino acid to the 4-nitrogen cyclic compound is in a range of about 1:16 to about 1:60.

Abstract: Disclosed are improved peptides for inhibiting angiogenesis, Ac-RLYE (SEQ ID NO: 1) and R(D)LYE (SEQ ID NO: 6), and a composition for the prevention and treatment of cancers and diseases related to angiogenesis comprising the peptides as an active ingredient. A peptide for inhibiting angiogenesis is disclosed wherein the L-Arg of an N-terminal is acetylated in a peptide consisting of an amino acid sequence of Arg-Leu-Tyr-Glu (SEQ ID NO: 1). A peptide for inhibiting angiogenesis is disclosed wherein L-Arg is substituted with D-Arg in a peptide consisting of the amino acid sequence of Arg-Leu-Tyr-Glu (SEQ ID NO: 6). Methods for using a composition comprising the peptides as active ingredients for the prevention or treatment of diseases (cancer, diabetic retinopathy or senile macular degeneration) caused by excessive angiogenesis are also disclosed. The peptides have a long half-life and are excellent in VEGF-induced angiogenesis inhibitory effect.

Abstract: The present invention relates to an automatic invasive device for body and, more particularly, to an automatic invasive device for body comprising a body press unit capable of pressing a human body part to detect a puncturing position. The present invention also relates to an automatic invasive device for body comprising at least one of a rotatable probe unit, a vacuum tube driving unit, and a body contact material supply unit. The automatic invasive device for body according to the present invention comprises: a syringe needle unit support part that supports a syringe needle that enters the body; and a press unit (500) that presses the body that has a site to be subjected to an invasive procedure.