Patents by Inventor Myeong Seong YOON

Myeong Seong YOON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and manufacturing method for the same
    Patent number: 10559474
    Abstract: A semiconductor device includes interlayer insulating layers and conductive patterns alternately stacked over a pipe gate, a first slit and a second slit penetrating the interlayer insulating layers and the conductive patterns and crossing each other, an etch stop pad groove overlapping an intersection of the first slit and the second slit, arranged in the pipe gate, and connected to the first slit or the second slit, and slit insulating layers filling the first slit, the second slit and the etch stop pad groove.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: February 11, 2020
    Assignee: SK hynix Inc.
    Inventors: Myeong Seong Yoon, Il Seok Seo
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
    Publication number: 20180323206
    Abstract: A semiconductor device includes interlayer insulating layers and conductive patterns alternately stacked over a pipe gate, a first slit and a second slit penetrating the interlayer insulating layers and the conductive patterns and crossing each other, an etch stop pad groove overlapping an intersection of the first slit and the second slit, arranged in the pipe gate, and connected to the first slit or the second slit, and slit insulating layers filling the first slit, the second slit and the etch stop pad groove.
    Type: Application
    Filed: July 12, 2018
    Publication date: November 8, 2018
    Inventors: Myeong Seong YOON, Il Seok SEO
  • Semiconductor device and manufacturing method for the same
    Patent number: 10050052
    Abstract: A semiconductor device includes interlayer insulating layers and conductive patterns alternately stacked over a pipe gate, a first slit and a second slit penetrating the interlayer insulating layers and the conductive patterns and crossing each other, an etch stop pad groove overlapping an intersection of the first slit and the second slit, arranged in the pipe gate, and connected to the first slit or the second slit, and slit insulating layers filling the first slit, the second slit and the etch stop pad groove.
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: August 14, 2018
    Assignee: SK Hynix Inc.
    Inventors: Myeong Seong Yoon, Il Seok Seo
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
    Publication number: 20170256559
    Abstract: A semiconductor device includes interlayer insulating layers and conductive patterns alternately stacked over a pipe gate, a first slit and a second slit penetrating the interlayer insulating layers and the conductive patterns and crossing each other, an etch stop pad groove overlapping an intersection of the first slit and the second slit, arranged in the pipe gate, and connected to the first slit or the second slit, and slit insulating layers filling the first slit, the second slit and the etch stop pad groove.
    Type: Application
    Filed: August 8, 2016
    Publication date: September 7, 2017
    Inventors: Myeong Seong YOON, Il Seok SEO