Abstract: A touch sensor laminate according to an embodiment of the present invention includes a lower structure, a touch sensor layer stacked on the lower structure, an adhesive layer stacked on the touch sensor layer and having a Young's Modulus from 0.05 to 1 MPa, and an optical layer stacked on the adhesive layer. The touch sensor laminate has a thickness ratio of a predetermined range to provide improved folding durability.

Abstract: Provided herein may be a semiconductor memory device. The semiconductor memory device may include: a memory cell array including a plurality of memory blocks; a peripheral circuit configured to apply an erase voltage to a source line and a plurality of select lines of a selected memory block among the plurality of memory blocks during an erase operation; and a control logic configured to control the peripheral circuit to form a trap in an area below at least one of a plurality of source select transistors included in the selected memory block, before the erase voltage is applied to the selected memory block.

Abstract: A transparent electrode structure according to an embodiment of the present invention includes a transparent substrate, a transparent electrode layer disposed on the transparent substrate and including a multi-layered structure of a transparent oxide electrode layer and a metal layer, and a barrier structure disposed between the transparent substrate and the transparent electrode layer and including at least one barrier material of an aluminum oxide-zinc oxide composite (AlZO) material, silazane, siloxane or a silicon-containing inorganic material. Electrical, optical and chemical stability may be improved by a combination of the transparent electrode layer and the barrier structure.

Abstract: A touch sensor laminate according to an embodiment of the present invention includes a lower structure, a touch sensor layer stacked on the lower structure, an adhesive layer stacked on the touch sensor layer and having a Young's Modulus from 0.05 to 1 MPa, and an optical layer stacked on the adhesive layer. The touch sensor laminate has a thickness ratio of a predetermined range to provide improved folding durability.

Abstract: Provided herein may be a semiconductor memory device. The semiconductor memory device may include: a memory cell array including a plurality of memory blocks; a peripheral circuit configured to apply an erase voltage to a source line and a plurality of select lines of a selected memory block among the plurality of memory blocks during an erase operation; and a control logic configured to control the peripheral circuit to form a trap in an area below at least one of a plurality of source select transistors included in the selected memory block, before the erase voltage is applied to the selected memory block.

Abstract: Provided herein may be a semiconductor memory device. The semiconductor memory device may include: a memory cell array including a plurality of memory blocks; a peripheral circuit configured to apply an erase voltage to a source line and a plurality of select lines of a selected memory block among the plurality of memory blocks during an erase operation; and a control logic configured to control the peripheral circuit to form a trap in an area below at least one of a plurality of source select transistors included in the selected memory block, before the erase voltage is applied to the selected memory block.

Abstract: The present invention relates to a flexible color filter integrated with a touch sensor, an organic light-emitting display including the same, and a manufacturing method thereof. The flexible color filter integrated with the touch sensor according to the present invention includes a color filter array formed on one surface of a separation layer, an overcoating layer formed on the color filter array, a touch sensor array formed on the overcoating layer, and a base film formed on the other surface of the separation layer. According to the present invention, a functional film, which is very thin, has high optical and flexible properties, and is formed by integrating a color filter with a touch sensor, and an organic light-emitting display to which the functional film is bonded may be implemented.

Abstract: The present invention relates to an apparatus and a method for simultaneously performing delamination and adhesion processes. The apparatus which simultaneously performs delamination and adhesion processes includes: a lower stage configured to suction and fix a carrier substrate on which a first workpiece is adhered; and an upper stage including a curved main body configured to suction and fix a second workpiece and formed in a shape convex toward the first workpiece, and a driving portion configured to rotate the curved main body such that predetermined portions of the second workpiece sequentially come into contact with corresponding predetermined portions of the first workpiece at a predetermined pressure, adhere the second workpiece to the first workpiece, and delaminate the first workpiece from the carrier substrate during an adhesion process.

Abstract: Provided herein may be a semiconductor memory device. The semiconductor memory device may include: a memory cell array including a plurality of memory blocks; a peripheral circuit configured to apply an erase voltage to a source line and a plurality of select lines of a selected memory block among the plurality of memory blocks during an erase operation; and a control logic configured to control the peripheral circuit to form a trap in an area below at least one of a plurality of source select transistors included in the selected memory block, before the erase voltage is applied to the selected memory block.

Abstract: The present invention relates to a flexible color filter integrated with a touch sensor, an organic light-emitting display including the same, and a manufacturing method thereof. The flexible color filter integrated with the touch sensor according to the present invention includes a color filter array formed on one surface of a separation layer, an overcoating layer formed on the color filter array, a touch sensor array formed on the overcoating layer, and a base film formed on the other surface of the separation layer. According to the present invention, a functional film, which is very thin, has high optical and flexible properties, and is formed by integrating a color filter with a touch sensor, and an organic light-emitting display to which the functional film is bonded may be implemented.

Abstract: The present invention relates to an apparatus and a method for simultaneously performing delamination and adhesion processes. The apparatus which simultaneously performs delamination and adhesion processes includes: a lower stage configured to suction and fix a carrier substrate on which a first workpiece is adhered; and an upper stage including a curved main body configured to suction and fix a second workpiece and formed in a shape convex toward the first workpiece, and a driving portion configured to rotate the curved main body such that predetermined portions of the second workpiece sequentially come into contact with corresponding predetermined portions of the first workpiece at a predetermined pressure, adhere the second workpiece to the first workpiece, and delaminate the first workpiece from the carrier substrate during an adhesion process.

Abstract: A transistor using a single crystal silicon nanowire and a method for fabricating the transistor is disclosed. The transistor using a single crystal silicon nanowire comprises a substrate and a single crystal silicon nanowire formed on the substrate. Here, the single crystal silicon nanowire comprises a source region and a drain region formed longitudinally with the single crystal silicon nanowire and separate from each other, and a channel region located between the source region and the drain region, wherein the perpendicular thickness of the channel region to the longitudinal direction is thinner than the thickness of the source region and the drain region.

Abstract: A transistor using a single crystal silicon nanowire and a method for fabricating the transistor is disclosed. The transistor using a single crystal silicon nanowire comprises a substrate and a single crystal silicon nanowire formed on the substrate. Here, the single crystal silicon nanowire comprises a source region and a drain region formed longitudinally with the single crystal silicon nanowire and separate from each other, and a channel region located between the source region and the drain region, wherein the perpendicular thickness of the channel region to the longitudinal direction is thinner than the thickness of the source region and the drain region.