Abstract: A substrate processing method is provided. The substrate processing method comprises loading a substrate onto a substrate support inside a chamber, forming a plasma inside the chamber, providing a first DC pulse signal to an electromagnet that generates a magnetic field inside the chamber and processing the substrate with the plasma, wherein the first DC pulse signal is repeated at a first period including a first section and a second section subsequent to the first section, the first DC pulse signal has a first level during the first section, and the first DC pulse signal has a second level different from the first level during the second section.

Abstract: An improved device for mounting a semiconductor package when testing electrical characteristics of the semiconductor package is capable of reducing stress which is applied to the semiconductor package. The device includes a shaped body, a plurality of spaced-apart protrusions that vertically extend from a first pair of opposing upper sides of the body, a plurality of guide blocks that extend from a second pair of opposing upper sides of the body, and a plurality of leads that extend from the top surface of the body and down side surfaces of the body. The leads may include inner portions that extend inward from the first pair of opposing upper sides of the body, and outer portions that extend down the sides of the body. In addition, a plurality of guide hooks for holding a semiconductor package may be formed on upper surfaces of the protrusions and/or the guide blocks.