Abstract: Disclosed are flat/vertical type vacuum field transistor (VFT) structures, which adopt a MOSFET-like flat or vertical structure so as to increase the degree of integration and can be operated at low operation voltages at high speeds. The flat type comprises a source and a drain, made of conductors, which stand at a predetermined distance apart on a thin channel insulator with a vacuum channel therebetween; a gate, made of a conductor, which is formed with a width below the source and the drain, the channel insulator functioning to insulate the gate from the source and the drain; and an insulating body, which serves as a base for propping up the channel insulator and the gate.