Abstract: Disclosed is a repairing fuse for semiconductor devices and fabrication therefor. The repairing fuse has a first conducting film and a plurality of second conducting films wherein the first conducting film and the second conducting films are initially disconnected and mutually connected upon illumination of a laser beam so as to repair the semiconductor devices. In a contact hole which has a lower part narrower than its upper part, the first conducting film is formed having a connection to a bottom wire layer atop a semiconductor substrate. The contact hole is formed in an interlayer insulating film deposited on the wire layer. The second conducting films are disconnected with each other, each having an end point at a predetermined part on the slant wall the upper part of the contact hole. This novel fuse concept eliminates conventional problems, bringing a significant improvement into the simplification and yield of a repairing process.