Patents by Inventor Mykhaylo Petrovych Semtsiv
Mykhaylo Petrovych Semtsiv has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230411548Abstract: The invention relates inter alia to a photoconductor (10) comprising a multilayer (13) which comprises a plurality of photoconductive semiconductor layers (131-134). According to the invention, the multilayer (13) comprises at least two sublayers (130) which each comprise at least a first photoconductive semiconductor layer (131) and a second photoconductive semiconductor layer (132), wherein the first and the second photoconductive semiconductor layer (131, 132) are doped to different degrees for each of the sublayers (130).Type: ApplicationFiled: October 22, 2021Publication date: December 21, 2023Applicants: HUMBOLDT-UNIVERSITAT ZU BERLIN, FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DERANGEWANDTEN FORSCHUNG E.V.Inventors: William Ted MASSELINK, Mykhaylo Petrovych SEMTSIV, Bjöm GLOBISCH
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Patent number: 10453680Abstract: A terahertz antenna includes at least one photoconductive layer which generates charge carriers upon irradiation of light and two electroconductive antenna elements via which an electric field can be applied to at least one section of the photoconductive layer. The photoconductive layer being doped with a dopant in a concentration of at least 1×1018 cm?3, the dopant being a transition metal. The photoconductive layer is produced by molecular beam epitaxy at a growth temperature of at least 200° C. and not more than 500° C., the dopant being arranged in the photoconductive layer such that it produces a plurality of point defects.Type: GrantFiled: February 10, 2017Date of Patent: October 22, 2019Assignee: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.Inventors: Roman Dietz, Thorsten Göbel, Björn Globisch, William Ted Masselink, Mykhaylo Petrovych Semtsiv
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Publication number: 20190035625Abstract: A terahertz antenna includes at least one photoconductive layer which generates charge carriers upon irradiation of light and two electroconductive antenna elements via which an electric field can be applied to at least one section of the photoconductive layer. The photoconductive layer being doped with a dopant in a concentration of at least 1×1018 cm?3, the dopant being a transition metal. The photoconductive layer is produced by molecular beam epitaxy at a growth temperature of at least 200° C. and not more than 500° C., the dopant being arranged in the photoconductive layer such that it produces a plurality of point defects.Type: ApplicationFiled: February 10, 2017Publication date: January 31, 2019Applicant: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.Inventors: Roman DIETZ, Thorsten GÖBEL, Björn GLOBISCH, William Ted MASSELINK, Mykhaylo Petrovych SEMTSIV
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Patent number: 8971369Abstract: A quantum cascade laser structure having a plurality of cascades each of which comprises a number of alternately arranged quantum wells and barriers of different thicknesses and heights, wherein at least one of the quantum wells and at least one of the barriers is under mechanical strain and the quantum wells and the barriers are coordinated such that the existing mechanical strains are largely compensated within one cascade, wherein each of the barriers comprise one or more barrier layers, wherein each cascade comprises a thinnest quantum well, a lowest barrier, a thickest quantum well, a highest barrier, and the highest barrier is followed by alternately arranged quantum wells and barriers.Type: GrantFiled: April 10, 2012Date of Patent: March 3, 2015Assignee: Quantiox GmbHInventors: William Ted Masselink, Mykhaylo Petrovych Semtsiv
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Publication number: 20130266036Abstract: A quantum cascade laser structure having a plurality of cascades each of which comprises a number of alternately arranged quantum wells and barriers of different thicknesses and heights, wherein at least one of the quantum wells and at least one of the barriers is under mechanical strain and the quantum wells and the barriers are coordinated such that the existing mechanical strains are largely compensated within one cascade, wherein each of the barriers comprise one or more barrier layers, wherein each cascade comprises a thinnest quantum well, a lowest barrier, a thickest quantum well, a highest barrier, and the highest barrier is followed by alternately arranged quantum wells and barriers.Type: ApplicationFiled: April 10, 2012Publication date: October 10, 2013Inventors: William Ted MASSELINK, Mykhaylo Petrovych Semtsiv
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Patent number: 7893425Abstract: A quantum well structure according to the invention includes a quantum well layer (107) arranged between two barrier layers (109, 112). It is distinguished in that at least one of the barrier layers (109) includes nanostructures (110) which compensate or modulate a lateral homogeneity of the barrier layer (109), that exists without the nanostructures (110), that is to say a homogeneity in the directions extending perpendicularly to the stacking direction of the layers in the quantum well structure.Type: GrantFiled: June 11, 2004Date of Patent: February 22, 2011Assignee: Humboldt-Universitaet zu BerlinInventors: William Ted Masselink, Mykhaylo Petrovych Semtsiv
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Patent number: 7848376Abstract: A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105j). The material of at least one quantum well (110a to 110j) as well as the material of at least one barrier layer (105 to 105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110a to 110j) and barrier layers (105 to 105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110a to 110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).Type: GrantFiled: July 10, 2008Date of Patent: December 7, 2010Assignees: Humboldt-Universtaet Zu Berlin, Forschungszentrum Rossendorf e.V.Inventors: William Ted Masselink, Sebastian Dressler, Mykhaylo Petrovych Semtsiv, Nikolai Georgiev, Manfred Helm, Thomas Dekorsy, Mathias Ziegler
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Publication number: 20090034570Abstract: A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105j). The material of at least one quantum well (110a to 110j) as well as the material of at least one barrier layer (105 to 105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110a to 110j) and barrier layers (105 to 105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110a to 110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).Type: ApplicationFiled: July 10, 2008Publication date: February 5, 2009Applicants: Humboldt-Universtaet zu Berlin, Forschungszentrum Rossendorf e.V.Inventors: William Ted MASSELINK, Sebastian Dressler, Mykhaylo Petrovych Semtsiv, Nikolai Georgiev, Manfred Helm, Thomas Dekorsy, Mathias Ziegler