Patents by Inventor Myles Aaron Steiner
Myles Aaron Steiner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240038918Abstract: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.Type: ApplicationFiled: August 23, 2023Publication date: February 1, 2024Inventors: Myles Aaron STEINER, Daniel Joseph FRIEDMAN, Ryan Matthew FRANCE, Asegun HENRY
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Publication number: 20230396206Abstract: A layered window in thermophotovoltaic (TPV) devices is disclosed herein. The device may include two or more front window layers, including an outer front window layer nearest the light source that is thin and highly doped and a lower doped inner front window layer nearest a TPV absorber layer. In some embodiments, there may be additional front window layers between the outer front window layer and the inner front window layer. In some embodiments, the TPV device also may include a front contact, a back contact, and other components.Type: ApplicationFiled: June 2, 2023Publication date: December 7, 2023Inventors: Brendan M. Kayes, Leah Y. Kuritzky, Emmett E. Perl, Tarun C. Narayan, Justin A. Briggs, Myles Aaron Steiner, Eric James Tervo, Madhan Kumar Arulanandam, Richard R. King
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Patent number: 11777047Abstract: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.Type: GrantFiled: May 19, 2022Date of Patent: October 3, 2023Assignees: Alliance for Sustainable Energy, LLC, Georgia Tech Research CorporationInventors: Myles Aaron Steiner, Daniel Joseph Friedman, Ryan Matthew France, Asegun Henry
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Patent number: 11764326Abstract: The present disclosure relates to a method for manufacturing a device, where the device includes, in order, a metamorphic contact layer, a first metamorphic junction, a metamorphic tunnel junction, and a second metamorphic junction. To produce the device, the manufacturing includes, in order, a first depositing of a buffer layer onto a substrate, a second depositing of the metamorphic contact layer, a third depositing of the first metamorphic junction, a fourth depositing of the metamorphic tunnel junction, a fifth depositing of the second metamorphic junction, and the removing of the buffer layer and the substrate.Type: GrantFiled: August 30, 2021Date of Patent: September 19, 2023Assignee: Alliance for Sustainable Energy, LLCInventors: Kevin Louis Schulte, Myles Aaron Steiner, Daniel Joseph Friedman, Ryan Matthew France, Asegun Henry
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Patent number: 11658258Abstract: The present disclosure relates to a method that includes depositing a spalling layer onto a surface that includes a substrate, depositing a device comprising a III-V material onto the spalling layer, resulting in the forming of a stack, and dividing the stack substantially at a plane positioned within the spalling layer to form a first portion that includes the substrate and a second portion that includes the PV device, where the spalling layer includes a first layer configured to provide a compressive stress and a second layer configured to provide a tensile stress, the first layer and the second layer form an interface, the dividing occurs as result of the interface, and the compressive stress and the tensile stress are strain-balanced so that a total strain within the spalling layer is approximately zero.Type: GrantFiled: September 24, 2021Date of Patent: May 23, 2023Assignee: Alliance for Sustainable Energy, LLCInventor: Myles Aaron Steiner
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Patent number: 11527667Abstract: Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.Type: GrantFiled: April 27, 2018Date of Patent: December 13, 2022Assignees: Alliance for Sustainable Energy, LLC, The Regents of the University of California, A California CorporationInventors: Nikhil Jain, Myles Aaron Steiner, John Franz Geisz, Emmett Edward Perl, Ryan Matthew France
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Publication number: 20220293810Abstract: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.Type: ApplicationFiled: May 19, 2022Publication date: September 15, 2022Inventors: Myles Aaron STEINER, Daniel Joseph FRIEDMAN, Ryan Matthew FRANCE, Asegun HENRY
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Patent number: 11367802Abstract: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.Type: GrantFiled: February 7, 2019Date of Patent: June 21, 2022Assignees: Alliance for Sustainable Energy, LLC, Georgia Tech Research CorporationInventors: Myles Aaron Steiner, Daniel Joseph Friedman, Ryan Matthew France, Asegun Henry
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Publication number: 20220102578Abstract: The present disclosure relates to a method that includes depositing a spalling layer onto a surface that includes a substrate, depositing a device comprising a III-V material onto the spalling layer, resulting in the forming of a stack, and dividing the stack substantially at a plane positioned within the spalling layer to form a first portion that includes the substrate and a second portion that includes the PV device, where the spalling layer includes a first layer configured to provide a compressive stress and a second layer configured to provide a tensile stress, the first layer and the second layer form an interface, the dividing occurs as result of the interface, and the compressive stress and the tensile stress are strain-balanced so that a total strain within the spalling layer is approximately zero.Type: ApplicationFiled: September 24, 2021Publication date: March 31, 2022Inventor: Myles Aaron STEINER
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Publication number: 20220069157Abstract: The present disclosure relates to a method for manufacturing a device, where the device includes, in order, a metamorphic contact layer, a first metamorphic junction, a metamorphic tunnel junction, and a second metamorphic junction. To produce the device, the manufacturing includes, in order, a first depositing of a buffer layer onto a substrate, a second depositing of the metamorphic contact layer, a third depositing of the first metamorphic junction, a fourth depositing of the metamorphic tunnel junction, a fifth depositing of the second metamorphic junction, and the removing of the buffer layer and the substrate.Type: ApplicationFiled: August 30, 2021Publication date: March 3, 2022Inventors: Kevin Louis SCHULTE, Myles Aaron STEINER, Daniel Joseph FRIEDMAN, Ryan Matthew FRANCE, Asegun HENRY
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Patent number: 10991847Abstract: The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.Type: GrantFiled: January 6, 2020Date of Patent: April 27, 2021Assignee: Alliance for Sustainable Energy, LLCInventors: Myles Aaron Steiner, Ryan Matthew France
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Patent number: 10927466Abstract: An aspect of the present disclosure is a photoelectrochemical device that includes a first cell that includes a first semiconductor alloy, a capping layer that includes a second semiconductor alloy, and a passivating layer that includes a third semiconductor alloy, where the passivating layer is positioned between the first cell and the capping layer, and at least a portion of the capping layer is configured to be in direct contact with an electrolyte.Type: GrantFiled: August 15, 2017Date of Patent: February 23, 2021Assignee: Alliance for Sustainable Energy, LLCInventors: Todd Gregory Deutsch, Myles Aaron Steiner, Daniel Joseph Friedman, James Luke Young, Ryan Matthew France, John A. Turner, Henning Döscher
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Patent number: 10749052Abstract: Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.Type: GrantFiled: February 13, 2018Date of Patent: August 18, 2020Assignee: Alliance for Sustainable Energy, LLCInventors: David Levi Young, Myles Aaron Steiner, John David Simon
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Publication number: 20200235262Abstract: The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.Type: ApplicationFiled: January 6, 2020Publication date: July 23, 2020Inventors: Myles Aaron STEINER, Ryan Matthew FRANCE
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Publication number: 20200115810Abstract: The present disclosure relates to a photoelectrochemical electrode that includes an absorber layer having a quantum well, where the photoelectrochemical electrode is configured to perform a first reaction defined as, 4H?+4e?2H2, or a second reaction defined as, 2H2OO2+4H++4e?, when the photoelectrochemical electrode is configured to be in contact with water.Type: ApplicationFiled: September 24, 2019Publication date: April 16, 2020Inventors: Myles Aaron Steiner, Daniel Joseph Friedman, John David Simon, Todd Gregory Deutsch, James Luke Young, Isabel Barraza Alvarez
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Publication number: 20190245109Abstract: The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.Type: ApplicationFiled: February 7, 2019Publication date: August 8, 2019Inventors: Myles Aaron Steiner, Daniel Joseph Friedman, Ryan Matthew France, Asegun Henry
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Publication number: 20180315879Abstract: Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.Type: ApplicationFiled: April 27, 2018Publication date: November 1, 2018Inventors: Nikhil Jain, Myles Aaron Steiner, John Franz Geisz, Emmett Edward Perl, Ryan Matthew France
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Publication number: 20180233607Abstract: Methods for forming interdigitated back contact solar cells from III-V materials are provided. According to an aspect of the invention, a method includes depositing a patterned Zn layer to cover first areas of an n-type emitter region, wherein the emitter region comprises a III-V material, and forming a passivated back contact region by counter-doping the first areas of the emitter region by diffusing Zn from the patterned Zn layer into the first areas of the emitter region, such that the first areas of the emitter region become p-type.Type: ApplicationFiled: February 13, 2018Publication date: August 16, 2018Inventors: David Levi Young, Myles Aaron Steiner, John David Simon
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Publication number: 20180051379Abstract: An aspect of the present disclosure is a photoelectrochemical device that includes a first cell that includes a first semiconductor alloy, a capping layer that includes a second semiconductor alloy, and a passivating layer that includes a third semiconductor alloy, where the passivating layer is positioned between the first cell and the capping layer, and at least a portion of the capping layer is configured to be in direct contact with an electrolyte.Type: ApplicationFiled: August 15, 2017Publication date: February 22, 2018Inventors: Todd Gregory Deutsch, Myles Aaron Steiner, Daniel Joseph Friedman, James Luke Young, Ryan Matthew France, John A. Turner, Henning Döscher