Patents by Inventor Myong-geun Yoon

Myong-geun Yoon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180104486
    Abstract: The present invention relates to an apparatus and a method for treating cancer using a discontinuous fractional alternative electric field, and more particularly, to an apparatus and a method for treating cancer using a discontinuous fractional alternative electric field capable of providing the same treatment effect on tumor while minimizing an effect on normal tissues by reducing time for which an electric field is applied over the existing electric field treatment. According to the exemplary embodiments of the present invention, the discontinuous fractional alternative electric field shows the same effect as applying the continuous electric field to the cancer cells while reducing the effect on the normal cells, and as a result the method for treating cancer using an optimized alternative electric field may be constructed by the treatment using the discontinuous fractional alternative electric field.
    Type: Application
    Filed: October 18, 2016
    Publication date: April 19, 2018
    Inventors: Myong Geun Yoon, Jiwon Sung, Yunhui Jo, Eun Ho Kim
  • Patent number: 8638982
    Abstract: Disclosed herein is a method of tracking the movement of an eyeball in eyeball tumor treatment. The method includes a calibration step of storing an actual length for each pixel of an image in a storage unit, a template image generation step of storing a patient's eyeball image as a template image of the patient's eyeball in the storage unit, an eyeball location tracking step of, during the treatment of the patient's eyeball, determining whether movement of the treatment image has occurred by comparing treatment images of the patient's eyeball in real time with the template image, and a control step of stopping the operation of the proton beam output device if the movement of the treatment image deviates from a preset tolerance range, and keeping operation of the proton beam output device normal if the movement of the treatment image is within the tolerance range.
    Type: Grant
    Filed: April 14, 2009
    Date of Patent: January 28, 2014
    Assignee: National Cancer Center
    Inventors: Dong Ho Shin, Sung Yong Park, Se Byeong Lee, Myong Geun Yoon, Young Kyung Lim, Kwan Ho Cho
  • Publication number: 20090257639
    Abstract: Disclosed herein is a method of tracking the movement of an eyeball in eyeball tumor treatment. The method includes a calibration step of storing an actual length for each pixel of an image in a storage unit, a template image generation step of storing a patient's eyeball image as a template image of the patient's eyeball in the storage unit, an eyeball location tracking step of, during the treatment of the patient's eyeball, determining whether movement of the treatment image has occurred by comparing treatment images of the patient's eyeball in real time with the template image, and a control step of stopping the operation of the proton beam output device if the movement of the treatment image deviates from a preset tolerance range, and keeping operation of the proton beam output device normal if the movement of the treatment image is within the tolerance range.
    Type: Application
    Filed: April 14, 2009
    Publication date: October 15, 2009
    Applicant: NATIONAL CANCER CENTER
    Inventors: Dong Ho Shin, Sung Yong Park, Se Byeong Lee, Myong Geun Yoon, Young Kyung Lim, Kwan Ho Cho
  • Patent number: 7297591
    Abstract: Provided is a capacitor of a semiconductor device. The capacitor includes a capacitor lower electrode disposed on a semiconductor substrate. A first dielectric layer comprising aluminum oxide (Al2O3) is disposed on the capacitor lower electrode. A second dielectric layer comprising a material having a higher dielectric constant than that of aluminum oxide is disposed on the first dielectric layer. A third dielectric layer comprising aluminum oxide is disposed on the second dielectric layer. A capacitor upper electrode is disposed on the third dielectric layer. The capacitor of the present invention can improve electrical properties. Thus, power consumption can be reduced and capacitance per unit area is high enough to achieve high integration.
    Type: Grant
    Filed: December 29, 2003
    Date of Patent: November 20, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seok-Jun Won, Myong-geun Yoon, Yong-Kuk Jeong, Dae-jin Kwon
  • Patent number: 7294546
    Abstract: A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.
    Type: Grant
    Filed: September 12, 2006
    Date of Patent: November 13, 2007
    Assignee: Samsung Electronics Co. Ltd.
    Inventors: Hong-Ki Kim, Ho-Kyu Kang, Moon-Han Park, Myong-Geun Yoon, Seok-Jun Won, Yong-Kuk Jeong, Kyung-Hun Kim
  • Publication number: 20070169697
    Abstract: In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.
    Type: Application
    Filed: February 23, 2007
    Publication date: July 26, 2007
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yong-kuk Jeong, Myong-geun Yoon, Seok-jun Won, Dae-jin Kwon
  • Patent number: 7199003
    Abstract: In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.
    Type: Grant
    Filed: October 29, 2003
    Date of Patent: April 3, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-kuk Jeong, Myong-geun Yoon, Seok-jun Won, Dae-jin Kwon
  • Publication number: 20070004133
    Abstract: A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.
    Type: Application
    Filed: September 12, 2006
    Publication date: January 4, 2007
    Inventors: Hong-Ki Kim, Ho-Kyu Kang, Moon-Han Park, Myong-Geun Yoon, Seok-Jun Won, Yong-Kuk Jeong, Kyung-Hun Kim
  • Publication number: 20060124987
    Abstract: Provided is a capacitor of a semiconductor device. The capacitor includes a capacitor lower electrode disposed on a semiconductor substrate. A first dielectric layer comprising aluminum oxide (Al2O3) is disposed on the capacitor lower electrode. A second dielectric layer comprising a material having a higher dielectric constant than that of aluminum oxide is disposed on the first dielectric layer. A third dielectric layer comprising aluminum oxide is disposed on the second dielectric layer. A capacitor upper electrode is disposed on the third dielectric layer. The capacitor of the present invention can improve electrical properties. Thus, power consumption can be reduced and capacitance per unit area is high enough to achieve high integration.
    Type: Application
    Filed: February 1, 2006
    Publication date: June 15, 2006
    Applicant: Samsung Electronics Co., Ltd
    Inventors: Seok-Jun Won, Myong-geun Yoon, Yong-Kuk Jeong, Dae-jin Kwon
  • Publication number: 20040141390
    Abstract: Provided is a capacitor of a semiconductor device. The capacitor includes a capacitor lower electrode disposed on a semiconductor substrate. A first dielectric layer comprising aluminum oxide (Al2O3) is disposed on the capacitor lower electrode. A second dielectric layer comprising a material having a higher dielectric constant than that of aluminum oxide is disposed on the first dielectric layer. A third dielectric layer comprising aluminum oxide is disposed on the second dielectric layer. A capacitor upper electrode is disposed on the third dielectric layer. The capacitor of the present invention can improve electrical properties. Thus, power consumption can be reduced and capacitance per unit area is high enough to achieve high integration.
    Type: Application
    Filed: December 29, 2003
    Publication date: July 22, 2004
    Inventors: Seok-Jun Won, Myong-geun Yoon, Yong-Kuk Jeong, Dae-jin Kwon
  • Publication number: 20040106252
    Abstract: In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.
    Type: Application
    Filed: October 29, 2003
    Publication date: June 3, 2004
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Yong-Kuk Jeong, Myong-Geun Yoon, Seok-Jun Won, Dae-Jin Kwon
  • Publication number: 20040084709
    Abstract: A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.
    Type: Application
    Filed: July 29, 2003
    Publication date: May 6, 2004
    Applicant: Samsung Electronics Co, Ltd.
    Inventors: Hong-Ki Kim, Ho-Kyu Kang, Moon-Han Park, Myong-Geun Yoon, Seok-Jun Won, Yong-Kuk Jeong, Kyung-Hun Kim