Abstract: An electric field cancer treatment apparatus using a rotating alternating current (AC) electric field according to an embodiment of the present disclosure includes a plurality of electrode pairs configured to transmit AC electric fields to a target area in a body, a plurality of AC electric field generators respectively connected to the plurality of electrode pairs and configured to generate AC electric fields to be applied to the plurality of electrode pairs, and a controller configured to control generation of AC electric fields by the plurality of AC electric field generators.

Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.

Abstract: An electric field cancer treatment apparatus using a rotating alternating current (AC) electric field according to an embodiment of the present disclosure includes a plurality of electrode pairs configured to transmit AC electric fields to a target area in a body, a plurality of AC electric field generators respectively connected to the plurality of electrode pairs and configured to generate AC electric fields to be applied to the plurality of electrode pairs, and a controller configured to control generation of AC electric fields by the plurality of AC electric field generators.

Abstract: The present disclosure describes an apparatus and method for alternating electric fields therapy using an optimization algorithm, and an apparatus for alternating electric fields therapy for treating tumors in a patient by applying electric fields to the tumors and normal tissues using one or more pairs of electrode pads containing most of the electrodes and including an image classifier to classify at least one organ in the patient's image for each organ, and an electric field optimizer to set the number and position of the applied electrodes based on the classified tumors and normal tissues, arrange the electrodes on electrode pads of preset size, and determine different magnitudes of voltage for the set of electrodes.

Abstract: Provided is a system for planning tumor-treating electric fields based on temperature control and absorbed energy in body, comprising a setting unit initially setting the number of electrodes, an electrode location, a duration and strength of voltage for each; a calculating unit calculating absorbed dose and temperature distribution in the body based on the initial settings; an evaluating unit evaluating the calculated absorbed dose and temperature distribution in the body to determine if they meet a preset reference; a changing unit changing at least one of the number of electrodes, the electrode location, the duration or strength of voltage for each electrode when the preset reference is not met; and a planning unit deriving an optimal electric field treatment plan by performing an optimization process including repeating the calculation, the determination and the changing steps until the dose distribution and temperature distribution in the body meet the preset reference.

Abstract: The present disclosure provides a system for planning electric field cancer treatment based on absorbed energy including: an image classification unit to classify a patient's medical image into an organ and a tumor; a property information setting unit to set property information for each region classified by the image classification unit; a prescription information determination unit to set a prescription method; a dose calculation unit to initially set the number and location of electrodes used for electric field cancer treatment and the electric field intensity for each electrode; and a dose optimization unit to optimize the dose by changing at least one electrode.

Abstract: The present disclosure describes an apparatus and method for alternating electric fields therapy using an optimization algorithm, and an apparatus for alternating electric fields therapy for treating tumors in a patient by applying electric fields to the tumors and normal tissues using one or more pairs of electrode pads containing most of the electrodes and including an image classifier to classify at least one organ in the patient's image for each organ, and an electric field optimizer to set the number and position of the applied electrodes based on the classified tumors and normal tissues, arrange the electrodes on electrode pads of preset size, and determine different magnitudes of voltage for the set of electrodes.

Abstract: The present invention relates to an apparatus and a method for treating cancer using a discontinuous fractional alternative electric field, and more particularly, to an apparatus and a method for treating cancer using a discontinuous fractional alternative electric field capable of providing the same treatment effect on tumor while minimizing an effect on normal tissues by reducing time for which an electric field is applied over the existing electric field treatment. According to the exemplary embodiments of the present invention, the discontinuous fractional alternative electric field shows the same effect as applying the continuous electric field to the cancer cells while reducing the effect on the normal cells, and as a result the method for treating cancer using an optimized alternative electric field may be constructed by the treatment using the discontinuous fractional alternative electric field.

Abstract: Disclosed herein is a method of tracking the movement of an eyeball in eyeball tumor treatment. The method includes a calibration step of storing an actual length for each pixel of an image in a storage unit, a template image generation step of storing a patient's eyeball image as a template image of the patient's eyeball in the storage unit, an eyeball location tracking step of, during the treatment of the patient's eyeball, determining whether movement of the treatment image has occurred by comparing treatment images of the patient's eyeball in real time with the template image, and a control step of stopping the operation of the proton beam output device if the movement of the treatment image deviates from a preset tolerance range, and keeping operation of the proton beam output device normal if the movement of the treatment image is within the tolerance range.

Abstract: Disclosed herein is a method of tracking the movement of an eyeball in eyeball tumor treatment. The method includes a calibration step of storing an actual length for each pixel of an image in a storage unit, a template image generation step of storing a patient's eyeball image as a template image of the patient's eyeball in the storage unit, an eyeball location tracking step of, during the treatment of the patient's eyeball, determining whether movement of the treatment image has occurred by comparing treatment images of the patient's eyeball in real time with the template image, and a control step of stopping the operation of the proton beam output device if the movement of the treatment image deviates from a preset tolerance range, and keeping operation of the proton beam output device normal if the movement of the treatment image is within the tolerance range.

Abstract: Provided is a capacitor of a semiconductor device. The capacitor includes a capacitor lower electrode disposed on a semiconductor substrate. A first dielectric layer comprising aluminum oxide (Al2O3) is disposed on the capacitor lower electrode. A second dielectric layer comprising a material having a higher dielectric constant than that of aluminum oxide is disposed on the first dielectric layer. A third dielectric layer comprising aluminum oxide is disposed on the second dielectric layer. A capacitor upper electrode is disposed on the third dielectric layer. The capacitor of the present invention can improve electrical properties. Thus, power consumption can be reduced and capacitance per unit area is high enough to achieve high integration.

Abstract: A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.

Abstract: In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.

Abstract: In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.

Abstract: A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.

Abstract: Provided is a capacitor of a semiconductor device. The capacitor includes a capacitor lower electrode disposed on a semiconductor substrate. A first dielectric layer comprising aluminum oxide (Al2O3) is disposed on the capacitor lower electrode. A second dielectric layer comprising a material having a higher dielectric constant than that of aluminum oxide is disposed on the first dielectric layer. A third dielectric layer comprising aluminum oxide is disposed on the second dielectric layer. A capacitor upper electrode is disposed on the third dielectric layer. The capacitor of the present invention can improve electrical properties. Thus, power consumption can be reduced and capacitance per unit area is high enough to achieve high integration.

Abstract: Provided is a capacitor of a semiconductor device. The capacitor includes a capacitor lower electrode disposed on a semiconductor substrate. A first dielectric layer comprising aluminum oxide (Al2O3) is disposed on the capacitor lower electrode. A second dielectric layer comprising a material having a higher dielectric constant than that of aluminum oxide is disposed on the first dielectric layer. A third dielectric layer comprising aluminum oxide is disposed on the second dielectric layer. A capacitor upper electrode is disposed on the third dielectric layer. The capacitor of the present invention can improve electrical properties. Thus, power consumption can be reduced and capacitance per unit area is high enough to achieve high integration.

Abstract: In a method of manufacturing a capacitor of a semiconductor device and an apparatus therefor, dielectric layers are deposited using only a source gas without a reactant gas and a curing process is performed a single time. As a result, process simplification, yield improvement, and equipment simplification are achieved. In a stand-alone memory or an embedded memory, the step coverage is enhanced and oxidation of a storage node contact plug is prevented. Also, in an analog capacitor, an RF capacitor, or a high-voltage capacitor, which uses thicker dielectric layers than the stand-alone capacitor or the embedded capacitor, the manufacturing process is greatly simplified.

Abstract: A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.