Abstract: Disclosed are novel compounds of Chemical Formula 1, optical isomers of the compounds, and pharmaceutically acceptable salts of the compounds or the optical isomers. The compounds, isomers, and salts exhibit excellent activity as GLP-1 receptor agonists. In particular, they, as GLP-1 receptor agonists, exhibit excellent glucose tolerance, thus having a great potential to be used as therapeutic agents for metabolic diseases. Moreover, they exhibit excellent pharmacological safety for cardiovascular systems.

Abstract: A data processing system includes a first memory, a second memory, a temperature sensor, and a controller. The temperature sensor is configured to sense a temperature at the data processing system and generate a temperature signal. The controller is configured to control whether the first memory is enabled or disabled and whether the second memory is enabled or disabled based on the temperature signal and based on a first temperature threshold associated with the first memory and a second temperature threshold associated with the second memory.

Abstract: A data processing system includes a first memory, a second memory, a temperature sensor, and a controller. The temperature sensor is configured to sense a temperature at the data processing system and generate a temperature signal. The controller is configured to control whether the first memory is enabled or disabled and whether the second memory is enabled or disabled based on the temperature signal and based on a first temperature threshold associated with the first memory and a second temperature threshold associated with the second memory.

Abstract: Provides is a multi-chip package including a plurality of semiconductor memory devices. Each of semiconductor memory devices includes a register and a control circuit. The register is configured to store start sequence information representing start of execution of a refresh operation in the multi-chip package. The control circuit is configured to control start of the execution of the refresh operation in response to the start sequence information stored in the register. Since the start of the execution of the refresh operation is performed in sequence of respective semiconductor memory devices according to the start sequence information stored in the register, consumption of peak current may be reduced in a power saving mode.

Abstract: Provides is a multi-chip package including a plurality of semiconductor memory devices. Each of semiconductor memory devices includes a register and a control circuit. The register is configured to store start sequence information representing start of execution of a refresh operation in the multi-chip package. The control circuit is configured to control start of the execution of the refresh operation in response to the start sequence information stored in the register. Since the start of the execution of the refresh operation is performed in sequence of respective semiconductor memory devices according to the start sequence information stored in the register, consumption of peak current may be reduced in a power saving mode.

Abstract: Provided is a memory device configured to store data having a first characteristic and a second characteristic in a memory region optimized to store data having the first characteristic and the second characteristic. The memory device includes a plurality of memory regions and a region determination unit configured to receive data, select a memory region appropriate for storing the received data, and store the data in the selected memory region. Correspondingly, performance degradation of the memory device may be prevented.

Abstract: A multi-chip semiconductor device capable of selectively activating and deactivating the individual semiconductor chips of the device and a chip enable method thereof are included. The individual semiconductor chips of the device are activated and deactivated in accordance with internal chip enable signals.

Abstract: A flash memory device and related method of operation are provided. The device generally comprises a word line voltage generator circuit configured to generate a word line voltage based on incremental step pulse programming; and a word line voltage controller circuit that controls the word line voltage generator circuit so that either the unit program time or the increment size of the word line voltage is varied according to the number of program data bits among the set of input data bits that the device will store in memory cells.

Abstract: A multi-chip semiconductor device capable of selectively activating and deactivating the individual semiconductor chips of the device and a chip enable method thereof are provided. The individual semiconductor chips of the device are activated and deactivated in accordance with internal chip enable signals.

Abstract: A flash memory device and related method of operation are provided. The device generally comprises a word line voltage generator circuit configured to generate a word line voltage based on incremental step pulse programming; and a word line voltage controller circuit that controls the word line voltage generator circuit so that either the unit program time or the increment size of the word line voltage is varied according to the number of program data bits among the set of input data bits that the device will store in memory cells.

Abstract: A flash memory device and related method of operation are provided. The device generally comprises a word line voltage generator circuit configured to generate a word line voltage based on incremental step pulse programming; and a word line voltage controller circuit that controls the word line voltage generator circuit so that either the unit program time or the increment size of the word line voltage is varied according to the number of program data bits among the set of input data bits that the device will store in memory cells.

Abstract: A multi-chip semiconductor device capable of selectively activating and deactivating the individual semiconductor chips of the device and a chip enable method thereof are provided. The individual semiconductor chips of the device are activated and deactivated in accordance with internal chip enable signals.

Abstract: The invention disclosed herein is a non-volatile memory device. The non-volatile memory device comprises: a first transistor connected between a first voltage and a control node, and controlled by a second voltage; a second transistor connected between the first voltage and the control node, and controlled by a third voltage, and a word line driver for driving a word line in responsive to a voltage of the control node. The second voltage is set to a ground voltage during an erase operation. The third voltage is set to a power voltage during the erase operation.

Abstract: A multi-chip semiconductor device capable of selectively activating and deactivating the individual semiconductor chips of the device and a chip enable method thereof are provided. The individual semiconductor chips of the device are activated and deactivated in accordance with internal chip enable signals.

Abstract: A nonvolatile integrated circuit memory device includes a memory cell array having a plurality of memory cells. A high voltage generating unit generates first, second, and third program voltages used in programming the memory cell array. A program control unit controls times of applying the second and third program voltages to the memory cell array responsive to the first program voltage. Programming methods for the nonvolatile integrated circuit memory devices are also provided.

Abstract: A flash memory device includes a write driver for driving a data line according to data to be written in a flash memory cell during a program period, a sense amplifier circuit for sensing and amplifying the data stored in the flash memory cell during a program verify period, and an insulation circuit for electrically insulating the sense amplifier circuit from the data line during an operation period of the write driver.

Abstract: A multi-chip semiconductor device capable of selectively activating and deactivating the individual semiconductor chips of the device and a chip enable method thereof are included. The individual semiconductor chips of the device are activated and deactivated in accordance with internal chip enable signals.

Abstract: A flash memory device is disclosed that includes a control circuit for generating a count-up pulse signal notifying a generation of an address required for a burst read operation. An address generator circuit generates an address in response to the count-up pulse signal, and a discharge circuit discharges global bit lines in response to the count-up pulse signal. According to this control scheme, the global bit lines may be discharged before the local and global bit lines are selected.

Abstract: A flash memory device and related method of operation are provided. The device generally comprises a word line voltage generator circuit configured to generate a word line voltage based on incremental step pulse programming; and a word line voltage controller circuit that controls the word line voltage generator circuit so that either the unit program time or the increment size of the word line voltage is varied according to the number of program data bits among the set of input data bits that the device will store in memory cells.

Abstract: A multi-chip semiconductor device capable of selectively activating and deactivating the individual semiconductor chips of the device and a chip enable method thereof are provided. The individual semiconductor chips of the device are activated and deactivated in accordance with internal chip enable signals.