Patents by Inventor Myong Soo Cho
Myong Soo Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140209956Abstract: In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer.Type: ApplicationFiled: January 10, 2014Publication date: July 31, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Myong Soo CHO, Tae Hun KIM, Young Ho RYU, Young Chul SHIN, Dong Myung SHIN
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Publication number: 20140203317Abstract: There is provided a semiconductor light emitting device including a substrate having light transmission properties and including a first surface and a second surface opposed to the first surface, a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially disposed on the first surface of the substrate, a first electrode and a second electrode connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively, and a window layer disposed on the second surface of the substrate, the window layer being formed of a light transmissive material which is different from a material of the substrate and including inclined side surfaces.Type: ApplicationFiled: January 16, 2014Publication date: July 24, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young Chul SHIN, Myong Soo CHO
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Patent number: 8753910Abstract: A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.Type: GrantFiled: October 12, 2012Date of Patent: June 17, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Myong Soo Cho, Ki Yeol Park, Sang Yeob Song, Si Hyuk Lee, Pun Jae Choi
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Publication number: 20140097458Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.Type: ApplicationFiled: December 9, 2013Publication date: April 10, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Pun Jae . CHOI, Jin Hyun LEE, Ki Yeol PARK, Myong Soo CHO
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Patent number: 8624276Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.Type: GrantFiled: August 7, 2012Date of Patent: January 7, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho
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Publication number: 20120299042Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.Type: ApplicationFiled: August 7, 2012Publication date: November 29, 2012Inventors: Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho
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Patent number: 8309970Abstract: A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.Type: GrantFiled: April 26, 2010Date of Patent: November 13, 2012Assignee: Samsung Led Co., Ltd.Inventors: Myong Soo Cho, Ki Yeol Park, Sang Yeob Song, Si Hyuk Lee, Pun Jae Choi
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Patent number: 8263987Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.Type: GrantFiled: June 17, 2011Date of Patent: September 11, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho
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Publication number: 20120211795Abstract: The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.Type: ApplicationFiled: April 30, 2012Publication date: August 23, 2012Applicant: Samsung LED Co., Ltd.Inventors: Myong Soo CHO, Ki Yeol Park, Pun Jae Choi
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Patent number: 8188496Abstract: The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.Type: GrantFiled: April 3, 2009Date of Patent: May 29, 2012Assignee: Samsung LED Co., Ltd.Inventors: Myong Soo Cho, Ki Yeol Park, Pun Jae Choi
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Publication number: 20110297992Abstract: There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.Type: ApplicationFiled: August 19, 2011Publication date: December 8, 2011Applicant: Samsung LED Co., Ltd.Inventors: Pun Jae CHOI, Ki Yeol Park, Sang Bum LEE, Seon Young MYOUNG, Myong Soo CHO
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Publication number: 20110241066Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.Type: ApplicationFiled: June 17, 2011Publication date: October 6, 2011Applicant: Samsung LED Co., Ltd.Inventors: Pun Jae CHOI, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho
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Patent number: 7985976Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.Type: GrantFiled: April 9, 2010Date of Patent: July 26, 2011Assignee: Samsung LED Co., Ltd.Inventors: Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho
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Patent number: 7964881Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.Type: GrantFiled: August 11, 2008Date of Patent: June 21, 2011Assignee: Samsung LED Co., Ltd.Inventors: Pun Jae Choi, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho
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Patent number: 7935974Abstract: The invention relates to a monolithic white light emitting device using wafer bonding or metal bonding. In the invention, a conductive submount substrate is provided. A first light emitter is bonded onto the conductive submount substrate by a metal layer. In the first light emitter, a p-type nitride semiconductor layer, a first active layer, an n-type nitride semiconductor layer and a conductive substrate are stacked sequentially from bottom to top. In addition, a second light emitter is formed on a partial area of the conductive substrate. In the second light emitter, a p-type AlGaInP-based semiconductor layer, an active layer and an n-type AlGaInP-based semiconductor layer are stacked sequentially from bottom to top. Further, a p-electrode is formed on an underside of the conductive submount substrate and an n-electrode is formed on a top surface of the n-type AlGaInP-based semiconductor layer.Type: GrantFiled: March 6, 2009Date of Patent: May 3, 2011Assignee: Samsung LED Co., Ltd.Inventors: Min Ho Kim, Masayoshi Koike, Kyeong Ik Min, Myong Soo Cho
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Patent number: 7884377Abstract: A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.Type: GrantFiled: March 17, 2010Date of Patent: February 8, 2011Assignee: Samsung LED Co., Ltd.Inventors: Grigory Onushkin, Jin Hyun Lee, Myong Soo Cho, Pun Jae Choi
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Patent number: 7795054Abstract: A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.Type: GrantFiled: December 4, 2007Date of Patent: September 14, 2010Assignee: Samsung LED Co., Ltd.Inventors: Myong Soo Cho, Ki Yeol Park, Sang Yeob Song, Si Hyuk Lee, Pun Jae Choi
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Publication number: 20100200867Abstract: A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.Type: ApplicationFiled: April 26, 2010Publication date: August 12, 2010Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Myong Soo CHO, Ki Yeol PARK, Sang Yeob SONG, Si Hyuk LEE, Pun Jae CHOI
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Publication number: 20100193829Abstract: There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.Type: ApplicationFiled: April 9, 2010Publication date: August 5, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Pun Jae CHOI, Jin Hyun Lee, Ki Yeol Park, Myong Soo Cho
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Publication number: 20100187548Abstract: A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.Type: ApplicationFiled: March 17, 2010Publication date: July 29, 2010Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Grigory ONUSHKIN, Jin Hyun LEE, Myong Soo CHO, Pun Jae CHOI