Patents by Inventor Myoundo CHUNG

Myoundo CHUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9627709
    Abstract: A method of fabricating a multilayered thin film solid state battery device. The method steps include, but are not limited to, the forming of the following layers: substrate member, a barrier material, a first electrode material, a thickness of cathode material, an electrolyte, an anode material, and a second electrode material. The formation of the barrier material can include forming a polymer material being configured to substantially block a migration of an active metal species to the substrate member, and being characterized by a barrier degrading temperature. The formation of cathode material can include forming a cathode material having an amorphous characteristic, while maintaining a temperature of about ?40 Degrees Celsius to no greater than 500 Degrees Celsius such that a spatial volume is characterized by an external border region of the cathode material. The method can then involve transferring the resulting thin film solid state battery device.
    Type: Grant
    Filed: October 15, 2014
    Date of Patent: April 18, 2017
    Assignee: Sakti3, Inc.
    Inventors: Ann Marie Sastry, Chia-Wei Wang, Yen-Hung Chen, Hyoncheol Kim, Xiang Chun Zhang, Myoundo Chung
  • Publication number: 20160240884
    Abstract: A method of fabricating a multilayered thin film solid state battery device. The method steps include, but are not limited to, the forming of the following layers: substrate member, a barrier material, a first electrode material, a thickness of cathode material, an electrolyte, an anode material, and a second electrode material. The formation of the barrier material can include forming a polymer material being configured to substantially block a migration of an active metal species to the substrate member, and being characterized by a barrier degrading temperature. The formation of cathode material can include forming a cathode material having an amorphous characteristic, while maintaining a temperature of about ?40 Degrees Celsius to no greater than 500 Degrees Celsius such that a spatial volume is characterized by an external border region of the cathode material. The method can then involve transferring the resulting thin film solid state battery device.
    Type: Application
    Filed: October 15, 2014
    Publication date: August 18, 2016
    Inventors: Ann Marie SASTRY, Chia-Wei WANG, Yen-Hung CHEN, Hyoncheol KIM, Xiang Chun ZHANG, Myoundo CHUNG