Patents by Inventor Myoung-gyun Suh

Myoung-gyun Suh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11326884
    Abstract: A disk resonator is pumped by counterpropagating pump signals to produce corresponding counterpropagating Brillouin laser signals. The pump laser optical frequencies are separated by a frequency offset ??P but excite the same nominal resonator optical mode; the Brillouin laser optical frequencies are separated by a beat frequency ??L with 0<??L<??P. A photodetector receives the Brillouin laser signals and produces an electrical signal at the beat frequency ??L. The frequency offset ??P can be large so enough to prevent locking of the Brillouin laser signals onto a common Brillouin laser frequency. A signal processing system derives from the beat frequency ??L an estimated angular velocity component of the disk optical resonator about an axis substantially perpendicular to the disk optical resonator.
    Type: Grant
    Filed: February 12, 2020
    Date of Patent: May 10, 2022
    Assignee: California Institute of Technology
    Inventors: Kerry Vahala, Jiang Li, Yu-Hung Lai, Myoung-Gyun Suh, Seung Hoon Lee
  • Publication number: 20210278215
    Abstract: A disk resonator is pumped by counterpropagating pump signals to produce corresponding counterpropagating Brillouin laser signals. The pump laser optical frequencies are separated by a frequency offset ??P but excite the same nominal resonator optical mode; the Brillouin laser optical frequencies are separated by a beat frequency ??L with 0<??L<??P. A photodetector receives the Brillouin laser signals and produces an electrical signal at the beat frequency ??L. The frequency offset ??P can be large so enough to prevent locking of the Brillouin laser signals onto a common Brillouin laser frequency. A signal processing system derives from the beat frequency ??L an estimated angular velocity component of the disk optical resonator about an axis substantially perpendicular to the disk optical resonator.
    Type: Application
    Filed: February 12, 2020
    Publication date: September 9, 2021
    Inventors: Kerry Vahala, Jiang Li, Yu-Hung Lai, Myoung-Gyun Suh, Seung Hoon Lee
  • Patent number: 8848760
    Abstract: An optical apparatus comprises a waveguide substrate and an optical reference cavity. The optical reference cavity comprises an optical waveguide formed on the waveguide substrate and arranged to form a closed loop greater than or about equal to 10 cm in length. The RMS resonance frequency fluctuation is less than or about equal to 100 Hz. The Q-factor can be greater than or about equal to 108. The optical waveguide can exhibit optical loss less than or about equal to 0.2 dB/m for propagation of an optical signal along the optical waveguide. The closed loop path can comprise two or more linked spirals greater than or about equal to 1 meter in length and can occupy an area on the waveguide substrate less than or about equal to 5 cm2.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: September 30, 2014
    Assignee: California Institute of Technology
    Inventors: Kerry Vahala, Tong Chen, Hansuek Lee, Myoung-Gyun Suh
  • Patent number: 8592677
    Abstract: A substrate includes a semiconductor layer, a plurality of dielectric layers disposed on one side of the semiconductor layer and separated from each other and a photoactive layer disposed between the dielectric layers and including a compound of a Group III element and a Group V element. Also disclosed are a solar cell including the same and a manufacturing method thereof.
    Type: Grant
    Filed: February 25, 2011
    Date of Patent: November 26, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Myoung Gyun Suh, Dong Ho Kim, Ji Eun Chang
  • Publication number: 20130298976
    Abstract: According to example embodiments, a solar cell includes a photovoltaic layer, a plurality of front electrodes, a rear electrode, and a transparent subsidiary electrode. The plurality of front electrodes and the rear electrode are disposed respectively on front and rear surfaces of the photovoltaic layer. The subsidiary electrode is disposed on front surfaces of the photovoltaic layer and the front electrodes. The subsidiary electrode may be graphene.
    Type: Application
    Filed: October 11, 2012
    Publication date: November 14, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ji-Eun CHANG, Myoung-Gyun SUH, Jin-Seong HEO
  • Patent number: 8507787
    Abstract: A solar cell includes a base layer; an emitter layer disposed on one side of the base layer; a first electrode in electrical communication with the base layer; and a second electrode in electrical communication with the emitter layer, wherein the base layer has a higher doping concentration with increasing distance from the interface between the base layer and the emitter layer, and the base layer has a doping concentration change slope that is further decreased with increasing distance from the interface between the base layer and the emitter layer.
    Type: Grant
    Filed: March 10, 2011
    Date of Patent: August 13, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Myoung Gyun Suh
  • Publication number: 20120080084
    Abstract: A substrate includes a semiconductor layer, a plurality of dielectric layers disposed on one side of the semiconductor layer and separated from each other and a photoactive layer disposed between the dielectric layers and including a compound of a Group III element and a Group V element. Also disclosed are a solar cell including the same and a manufacturing method thereof.
    Type: Application
    Filed: February 25, 2011
    Publication date: April 5, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Myoung Gyun SUH, Dong Ho KIM, Ji Eun CHANG
  • Publication number: 20120080082
    Abstract: A solar cell includes a base layer; an emitter layer disposed on one side of the base layer; a first electrode in electrical communication with the base layer; and a second electrode in electrical communication with the emitter layer, wherein the base layer has a higher doping concentration with increasing distance from the interface between the base layer and the emitter layer, and the base layer has a doping concentration change slope that is further decreased with increasing distance from the interface between the base layer and the emitter layer.
    Type: Application
    Filed: March 10, 2011
    Publication date: April 5, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Myoung Gyun SUH
  • Publication number: 20110271954
    Abstract: A solar concentrator comprises an incidence surface, a first reflective curved surface corresponding to the incidence surface, a second reflective curved surface disposed in a center part of the incidence surface, and a concentrating part disposed in a center part of the first reflective curved surface and corresponding to the second reflective curved surface, wherein the incidence surface, the first reflective curved surface, the second reflective curved surface, and the concentrator include a substantially same material from each other.
    Type: Application
    Filed: November 23, 2010
    Publication date: November 10, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Myoung-Gyun SUH, Dong-Ho KIM, Ji-Eun CHANG
  • Publication number: 20080111139
    Abstract: Provided is a vertical light emitting device having improved light extraction efficiency and a method of manufacturing the same. The vertical light emitting device may include a p type electrode, a p type semiconductor layer, an active layer, and an n type semiconductor layer which may be sequentially formed on the p type electrode, and an n type electrode on a portion of a surface of the n type semiconductor layer, wherein the portion of the surface of the n type semiconductor layer may be at an inclined plane inclined from an area near a circumference of the n type electrode towards the active layer. The p type electrode may include a current blocking layer which is made of an insulating material and on the p type electrode directly under the n type electrode. Accordingly, a voltage increase may be minimized or reduced, and light extraction efficiency may be improved.
    Type: Application
    Filed: July 24, 2007
    Publication date: May 15, 2008
    Inventors: Jung-hye Chae, Myoung-gyun Suh