Abstract: Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing oxidation treatment of the reacted solution, wherein at least one kind of pure organic solvent containing no water is used as a solvent for the cerium precursor solution as well as the precipitant solution to thereby prepare the cerium oxide powder, the particle size of which is adjusted to 50 nm to 3 ?m. Cerium oxide powder obtained from the method and CMP slurry comprising the cerium oxide powder as a polishing agent are also disclosed.

Abstract: The present invention relates to cerium oxide powder and a process for producing the same. The cerium oxide powder of the invention, which is produced by mixing a cerium source such as cerium oxide, cerium hydroxide and cerium carbonate with an alkali metal compound, as flux, and performing high temperature treatment, may have a variety particle size while having spherical shape.

Abstract: In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and carrying out a precipitation reaction, wherein cerium carbonate is controlled to have an orthorhombic crystal structure, a hexagonal crystal structure or an orthorhombic/hexagonal mixed crystal structure, by using at least one type of organic solvent comprising at least two hydroxyl groups (OH) in molecular formula as a solvent for either or both the cerium precursor solution and the carbonate precursor solution, and varying a number of carbons or hydroxyl groups (OH) included in the molecular formula of the organic solvent. The method can easily and inexpensively obtain cerium carbonate powder with a desired crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

Abstract: The present invention relates to a method for preparing cerium oxide which enables preparation of cerium oxide showing improved polishing performance, cerium oxide prepared therefrom, and CMP slurry comprising the same. The method for preparing cerium oxide comprises the step of contacting cerium oxide with primary alcohol to increase specific surface area of the cerium oxide 10% or more.

Abstract: The present invention relates to a method for preparing cerium carbonate which enables preparation of hexagonal cerium carbonate by a simplified process, a cerium carbonate powder prepared thereby, and a method for preparing a cerium oxide powder using the same. The method for preparing cerium carbonate comprises the step of contact-reacting orthorhombic cerium carbonate with a primary alcohol aqueous solution comprising water and primary alcohol at a weight ratio of 1:0.1 or more at a temperature of 160° C. or more to form hexagonal cerium carbonate.

Abstract: The present invention relates to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same, and more particularly, to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same in which the specific surface area of the powder is increased by preparing a cerium precursor, and then decomposing and calcinating the prepared cerium precursor. The pore distribution is controlled to increase the chemical contact area between a polished film and a polishing material, thereby reducing polishing time while the physical strength of powder is decreased, which remarkably reduces scratches on a polished film.

Abstract: A semiconductor device and methods of fabricating the same, wherein insulation layers are interposed to sequentially dispose the semiconductor device on a semiconductor substrate. The semiconductor device includes a first conductive plate, a second conductive plate, a third conductive plate, and a fourth conductive plate. At least two of the first, second, third and fourth conductive plates are electrically connected and constitute at least two capacitors.

Abstract: A semiconductor device and methods of fabricating the same, wherein insulation layers are interposed to sequentially dispose the semiconductor device on a semiconductor substrate. The semiconductor device includes a first conductive plate, a second conductive plate, a third conductive plate, and a fourth conductive plate. At least two of the first second, third and fourth conductive plates are electrically connected and constitute at least two capacitors.

Abstract: The present invention relates to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same, and more particularly, to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same in which the specific surface area of the powder is increased by preparing a cerium precursor, and then decomposing and calcinating the prepared cerium precursor. The pore distribution is controlled to increase the chemical contact area between a polished film and a polishing material, thereby reducing polishing time while the physical strength of powder is decreased, which remarkably reduces scratches on a polished film.

Abstract: In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a urea solution and carrying out a precipitation reaction, wherein the cerium carbonate powder has a hexagonal crystal structure, by using at least one type of organic solvent as a solvent for either or both the cerium precursor solution and the urea solution, and adjusting temperature of the precipitation reaction within a range of 120° C. to 300° C. Also, the method can yield cerium carbonate powder, cerium oxide powder from the cerium carbonate powder, and CMP slurry including the cerium oxide powder as an abrasive. In the method, urea as a precipitant can improve the uniformity of a reaction, and thus it is possible to easily and inexpensively obtain cerium carbonate powder with a hexagonal crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

Abstract: Disclosed is a CMP slurry in which a compound having a weight-average molecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group (COOH), or both, is added to a CMP slurry comprising abrasive particles and water and having a first viscosity, so that the CMP slurry is controlled to have a second viscosity 5-30% lower than the first viscosity. Also disclosed is a method for polishing a semiconductor wafer using the CMP slurry. According to the disclosed invention, the agglomerated particle size of abrasive particles in the CMP slurry can be reduced, while the viscosity of the CMP slurry can be reduced and the global planarity of wafers upon polishing can be improved. Thus, the CMP slurry can be advantageously used in processes for manufacturing semiconductor devices requiring fine patterns and can improve the reliability and production of semiconductor devices through the use thereof in semiconductor processes.

Abstract: In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and carrying out a precipitation reaction, wherein cerium carbonate is controlled to have an orthorhombic crystal structure, a hexagonal crystal structure or an orthorhombic/hexagonal mixed crystal structure, by using at least one type of organic solvent comprising at least two hydroxyl groups (OH) in molecular formula as a solvent for either or both the cerium precursor solution and the carbonate precursor solution, and varying a number of carbons or hydroxyl groups (OH) included in the molecular formula of the organic solvent. The method can easily and inexpensively obtain cerium carbonate powder with a desired crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

Abstract: Disclosed is a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution to cause precipitation, wherein at least one solvent used in the cerium precursor solution and the carbonate precursor solution is an organic solvent. Cerium carbonate powder obtained from the method, cerium oxide powder obtained from the cerium carbonate powder, a method for preparing the cerium oxide powder, and CMP slurry comprising the cerium oxide powder are also disclosed. The method for preparing cerium carbonate using an organic solvent, allows the resultant cerium carbonate powder to have a size and shape controllable from the initial nucleation step. Additionally, it is possible to easily control the size and shape of cerium oxide powder obtained from the cerium carbonate powder.

Abstract: Method of preparing cerium carbonate powder by mixing a cerium precursor solution with a carbonate precursor solution and subjecting the mixture solution to a precipitation reaction, wherein the concentration of cerium in the cerium precursor solution ranges from 1M to 10M, the molar concentration ratio of the cerium precursor to the carbonate precursor ranges from 1:1 to 1:7, and the cerium precursor solution contains at least one additive selected from the group consisting of carbonate compounds, acrylic compounds, and sulfate ion-containing compounds. The cerium carbonate powder has an orthorhombic crystal structure, a particle size of 0.05 to 1 ?m, and an aspect ratio of 1 to 5. Moreover, disclosed are cerium oxide powder prepared from said cerium carbonate powder as a precursor, a preparation method thereof, and a CMP slurry containing said cerium oxide powder as an abrasive.

Abstract: Disclosed are cerium oxide powder for an abrasive; CMP slurry including the same; and a shallow trench isolation (STI) process using the CMP slurry. At least two kinds of cerium oxides prepared by using cerium carbonates having different crystal structures are mixed in an appropriate ratio and used as an abrasive for CMP slurry, thereby adjusting required polishing properties of the CMP slurry. Also, in a disclosed method of preparing a cerium carbonate, the crystal structure of the cerium carbonate can be easily controlled.

Abstract: Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing oxidation treatment of the reacted solution, wherein at least one kind of pure organic solvent containing no water is used as a solvent for the cerium precursor solution as well as the precipitant solution to thereby prepare the cerium oxide powder, the particle size of which is adjusted to 50 nm to 3 ?m. Cerium oxide powder obtained from the method and CMP slurry comprising the cerium oxide powder as a polishing agent are also disclosed.

Abstract: Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.

Abstract: A wearable system and a method for transferring and controlling information/service based on biologically generated information from a user are provided. In the method, an intuitive bio signal generated by a user is sensed and a device pointed by the sensed bio signal is selected. Then, bio signal information is created using the sensed bio signal and the generated bio signal information is transmitted to the selected device. After transmitting, the information/service is transferred to the selected device after confirming that the selected device that receives the bio signal information is activated.

Abstract: A cerium oxide powder for one-component CMP slurry, which has a specific surface area of 5 m2/g or more, and a ratio of volume fraction of pores with a diameter of 3 nm or more to that of pores with a diameter less than 3 nm of 8:2˜2:8, is disclosed. A method for preparing the same, a one-component CMP slurry comprising the same as an abrasive material, and a method of shallow trench isolation using the one-component CMP slurry are also disclosed. The CMP slurry causes no precipitation of the cerium oxide powder even if it is provided as a one-component CMP slurry, because the CMP slurry uses, as an abrasive material, cerium oxide powder that is obtained via a low-temperature calcination step, optionally a pulverization step, and a high-temperature calcination step and has a high pore fraction and low strength.

Abstract: A system for processing digital photo contents in a digital camera is disclosed. The system includes a content transmitting unit, and a content receiving unit. The content transmitting unit creates an image by photographing objects in a photographing area, requests supplementary information to at least one of persons in the photographing area, receives personal IDs from at least one of target persons, composes digital photo contents using the created image and the personal ID and stores the composed digital photo contents, and transmits after classifying the stored digital photo content by the received personal ID. The content receiving unit transmits an own personal ID when a request for supplementary information to identify a target person from a content transmitting unit of a photographer, receives digital photo contents composed using an image captured from the content transmitting unit and the personal ID, and displays the received digital photo contents.