Abstract: A semiconductor device includes: a lower structure; a horizontal conductive line which is oriented horizontally over the lower structure; a data storage element which is disposed over the lower structure to be spaced from the horizontal conductive line; a vertical conductive line which is vertically oriented between the horizontal conductive line and the data storage element; a horizontal layer which is oriented horizontally between the horizontal conductive line and the data storage element, and including a recessed side which is disposed adjacent to the vertical conductive line; and a body contact portion oriented which is vertically oriented by penetrating the horizontal layer.

Abstract: A semiconductor device includes: active layers vertically stacked over a substrate; word lines extending in a direction crossing the active layers over the active layers; a bit line commonly coupled to first sides of the active layers and extending in a direction perpendicular to the substrate; storage nodes of a data storage element that are vertically stacked over the substrate while being coupled to second sides of the active layers, respectively; and vertical isolation layers including air gaps disposed between the bit lines.

Abstract: A semiconductor device includes: a word line stack disposed over a lower structure and including a plurality of word lines stacked in a direction vertical to a surface of the lower structure; and pillar-shaped slits penetrating edge parts of the word lines and including an etch stopper.