Abstract: Provided is an earthquake response system using a seismic motion sensor. The seismic motion sensor of the earthquake response system includes: a sensor unit measuring a sensor value including peak ground acceleration (PGA) of the ground due to shaking; a seismic motion sensing unit sensing seismic motion on the basis of a seismic motion sensing result value calculated from an artificial neural network that uses the peak ground acceleration as input when the peak ground acceleration satisfies a seismic motion sensing condition; a seismic motion determiner determining generation of final seismic motion on the basis of a seismic motion determination parameter calculated from the sensor value on the basis of the seismic motion sensing result; a shaking grade calculator calculating a shaking grade of the determined final seismic motion through the peak ground acceleration; and a communication unit notifying the shaking grade of the final seismic motion.

Abstract: Provided is an earthquake response system using a seismic motion sensor. The seismic motion sensor of the earthquake response system includes: a sensor unit measuring a sensor value including peak ground acceleration (PGA) of the ground due to shaking; a seismic motion sensing unit sensing seismic motion on the basis of a seismic motion sensing result value calculated from an artificial neural network that uses the peak ground acceleration as input when the peak ground acceleration satisfies a seismic motion sensing condition; a seismic motion determiner determining generation of final seismic motion on the basis of a seismic motion determination parameter calculated from the sensor value on the basis of the seismic motion sensing result; a shaking grade calculator calculating a shaking grade of the determined final seismic motion through the peak ground acceleration; and a communication unit notifying the shaking grade of the final seismic motion.

Abstract: The present invention relates to a composition for inhibiting angiogenesis, containing neo-N-methylsansalvamide (NMSSV), which is a cyclic pentadepsipeptide, as an effective ingredient, and specifically, since the NMSSV of the present invention has excellent activity which inhibits cell migration and tube formation associated with angiogenesis, and concentration-dependently inhibits angiogenesis induced by a vascular endothelial growth factor, it is expected that the NMSSV of the present invention may inhibit angiogenesis and be usefully used as a therapeutic agent for various diseases in which angiogenesis is abnormally regulated.

Abstract: A seat device operatively connected to an HVAC apparatus is provided. The seat device includes the HVAC apparatus to adjust the indoor air within a vehicle. A seat blower is mounted on a seat to blow indoor air, introduced through an inlet thereof, to a seat cushion and a seat back. A connecting duct allows airflow between the seat blower and the HVAC apparatus and a mesh frame connects a circumferential edge of the inlet of the seat blower with the connecting duct to allow ventilation therethrough.

Abstract: A wearable display device includes a display unit configured to transmit an image, a first housing having a first end connected to the display unit, a second housing having a first end disposed opposite to the first end of the first housing, and a sliding unit configured to slidably connect the first housing and the second housing to each other.

Abstract: A seat device operatively connected to an HVAC apparatus is provided. The seat device includes the HVAC apparatus to adjust the indoor air within a vehicle. A seat blower is mounted on a seat to blow indoor air, introduced through an inlet thereof, to a seat cushion and a seat back. A connecting duct allows airflow between the seat blower and the HVAC apparatus and a mesh frame connects a circumferential edge of the inlet of the seat blower with the connecting duct to allow ventilation therethrough.

Abstract: A semiconductor integrated circuit device includes a semiconductor substrate; a plurality of word lines extending parallel to one another on the semiconductor substrate; a plurality of bit lines extending parallel to one another on the semiconductor substrate and arranged to intersect the word lines, thereby delimiting a plurality of crossing regions and a plurality of unit memory cells; a plurality of gate electrodes formed to control respective pairs of unit memory cells adjacent to each other with the word lines interposed therebetween and to contact corresponding word lines on one sides of the crossing regions; storage node contacts respectively formed in spaces of the unit memory cells; and a plurality of bit line contacts formed to contact the respective bit lines on one sides of the crossing regions.

Abstract: A wearable display device includes a display unit configured to transmit an image, a first housing having a first end connected to the display unit, a second housing having a first end disposed opposite to the first end of the first housing, and a sliding unit configured to slidably connect the first housing and the second housing to each other.

Abstract: A semiconductor integrated circuit device includes a semiconductor substrate; a plurality of word lines extending parallel to one another on the semiconductor substrate; a plurality of bit lines extending parallel to one another on the semiconductor substrate and arranged to intersect the word lines, thereby delimiting a plurality of crossing regions and a plurality of unit memory cells; a plurality of gate electrodes formed to control respective pairs of unit memory cells adjacent to each other with the word lines interposed therebetween and to contact corresponding word lines on one sides of the crossing regions; storage node contacts respectively formed in spaces of the unit memory cells; and a plurality of bit line contacts formed to contact the respective bit lines on one sides of the crossing regions.

Abstract: A semiconductor memory device includes a plurality of wordlines and a driver configured to, when an wordline of the plurality of wordlines is activated by an active command, drive at least one non-activated wordline neighboring the activated wordline and remaining non-activated wordlines with different wordline driving voltage levels during a period of time that the activated wordline is driven to a high voltage level.

Abstract: A semiconductor memory device includes a plurality of wordlines and a driver configured to, when an wordline of the plurality of wordlines is activated by an active command, drive at least one non-activated wordline neighboring the activated wordline and remaining non-activated wordlines with different wordline driving voltage levels during a period of time that the activated wordline is driven to a high voltage level.