Abstract: Provided is a hydrogen reformer using exhaust gas, comprising: a catalytic reaction unit which generates a reforming gas containing hydrogen when exhaust gas generated in an engine and fuel are supplied thereto; and a heat exchange chamber which is mounted on an outer surface of the catalytic reaction unit and exchanges heat between the exhaust gas and the catalytic reaction unit to supply heat that is required for an endothermic reaction of the catalytic reaction unit, wherein heat of the exhaust gas is used for the endothermic reaction of a catalyst, such that a separate heat source for the endothermic reaction is unnecessary.

Abstract: A ballast water-free ship using a difference in the depth of the bottom shell plate between the bow/stern and the midship section and a construction method thereof. A stepped portion is formed between either the bow or the stern and the midship section, such that the depth of the bottom shell plate of either the bow or the stern differs from the depth of the bottom shell plate of the cargo containment in the midship section, so that cargo can be loaded and unloaded without ballast water operation.

Abstract: Provided is a method of manufacturing a metal catalyst support including: transferring a plate member of the same size along a transfer unit; aligning the plate member so that a front portion of the plate member is located at a start point when the plate member reaches a set position; forming a corrugated plate by alternately forming a first corrugated portion and a second corrugated portion on the plate member which is aligned at the start point; and laminating the fabricated corrugated plates and the flat plates alternately in a case.

Abstract: A ballast water-free ship using a difference in the depth of the bottom shell plate between the bow/stern and the midship section and a construction method thereof. A stepped portion is formed between either the bow or the stern and the midship section, such that the depth of the bottom shell plate of either the bow or the stern differs from the depth of the bottom shell plate of the cargo containment in the midship section, so that cargo can be loaded and unloaded without ballast water operation.

Abstract: A method of driving a light-source module includes adjusting a frequency of a boosting switching signal based on a dimming signal which controls luminance of a light-emitting diode (“LED”) string of the light-source module, where the LED string comprises a plurality of LEDs connected to each other in series, and controlling a main transistor in response to the boosting switching signal to transfer a driving voltage to the LED string.

Abstract: The semiconductor device including a substrate comprising a chip region and a guard-ring region which surrounds a side surface of the chip region, an isolation layer configured to define an active region within the guard-ring region, a first doping layer in the active region and doped with first impurities having a first doping concentration, a second doping layer on the first doping layer and in the active region, the second doping layer doped with second impurities having a same conductivity type as the first impurities of the first doping layer, the second impurities having a second doping concentration, the second doping concentration being greater than the first doping concentration, a first gate electrode on the second doping layer, and a first wire layer on the first gate electrode may be provided.

Abstract: A method of driving a light-source module includes adjusting a frequency of a boosting switching signal based on a dimming signal which controls luminance of a light-emitting diode (“LED”) string of the light-source module, where the LED string comprises a plurality of LEDs connected to each other in series, and controlling a main transistor in response to the boosting switching signal to transfer a driving voltage to the LED string.

Abstract: Provided is a catalyst carrier module for a large-capacity catalyst reactor, which can be assembled in a large-capacity structure by laminating a flat plate and a wave plate to be fixed in a can without brazing the flat plate and the wave plate constituting a cell forming body, for use in a catalytic reactor requiring a large-capacity exhaust gas treatment. The catalyst carrier module (or block) includes: a can of a rectangular tube shape having an inlet and an outlet; at least one cell forming body in which a plurality of hollow cells are formed by alternately laminating a wave plate and a flat plate which are coated with a catalyst on a surface thereof and inserted into the can; and a fixing unit installed at the inlet and the outlet of the can to prevent the at least one cell forming body from detaching from the can.

Abstract: Integrated circuit devices are provided. An integrated circuit device includes a substrate and a device isolation film on the substrate. An active region of the substrate is defined by the device isolation film on the substrate and has a first width in a horizontal direction. A gate electrode is on the active region and has a second width equal to or less than the first width of the active region in the horizontal direction. The integrated circuit device includes an insulating spacer over the device isolation film and the active region.

Abstract: A semiconductor device is provided that is capable of enhancing a layout efficiency by providing a plurality of gamma voltages using a resistive line of a single body. The semiconductor device may include a plurality of connection structures arranged in a first direction, a resistive line connected to the plurality of connection structures and including a plurality of resistive regions arranged in the first direction, each of the resistive regions being defined between a respective pair of adjacent connection structures of the plurality of connection structures, and a plurality of conductive pads on the plurality of connection structures and connected to the resistive line. At least two of the plurality of conductive pads are configured for use as voltage nodes.

Abstract: A semiconductor device in which a threshold voltage is adjusted by a simplified process and in which current characteristics are improved may include a device isolation layer defining an active region in a substrate, a gate electrode extending in a first direction on the active region, a high-concentration impurity region in the active region on a side of the gate electrode and extending in the first direction, and a low-concentration impurity region at least partly surrounding the high-concentration impurity region. The active region may include a plurality of connecting sections below the gate electrode that protrude from the low-concentration impurity region and extend in a second direction that intersects the first direction. The device isolation layer may include a plurality of separating sections that separate the connecting sections from each other.

Abstract: The semiconductor device including a substrate comprising a chip region and a guard-ring region which surrounds a side surface of the chip region, an isolation layer configured to define an active region within the guard-ring region, a first doping layer in the active region and doped with first impurities having a first doping concentration, a second doping layer on the first doping layer and in the active region, the second doping layer doped with second impurities having a same conductivity type as the first impurities of the first doping layer, the second impurities having a second doping concentration, the second doping concentration being greater than the first doping concentration, a first gate electrode on the second doping layer, and a first wire layer on the first gate electrode may be provided.

Abstract: Provided is a method of manufacturing a metal catalyst support including: transferring a plate member of the same size along a transfer unit; aligning the plate member so that a front portion of the plate member is located at a start point when the plate member reaches a set position; forming a corrugated plate by alternately forming a first corrugated portion and a second corrugated portion on the plate member which is aligned at the start point; and laminating the fabricated corrugated plates and the flat plates alternately in a case.

Abstract: Provided is a metal catalyst support including: a case having a space through which exhaust gas passes; and flat plates and corrugated plates which are alternately stacked in the case and coated with a catalyst, wherein the corrugated plates are formed such that a first corrugated plate and a second corrugated plate are disposed with the flat plate therebetween, the first corrugated plate and the second corrugated plate are disposed such that a first corrugated portion and a second corrugated portion are alternately and repeatedly formed, and the vertex of the first corrugated portion and the vertex of the second corrugated portion face and coincide with each other, to thereby minimize deformation during thermal expansion due to external impact, vibration and temperature change.

Abstract: A semiconductor chip includes a substrate including a circuit area having a rectangular shape and a peripheral area surrounding the circuit area, a key area being overlapping a part of the circuit area and a part of the peripheral area, a plurality of drive circuit cells in the circuit area, and a conductive reference line on the peripheral area and extending in a first direction parallel to a first edge among four edges of the rectangular shape of the circuit area.

Abstract: Provided is a hydrogen reformer using exhaust gas, comprising: a catalytic reaction unit which generates a reforming gas containing hydrogen when exhaust gas generated in an engine and fuel are supplied thereto; and a heat exchange chamber which is mounted on an outer surface of the catalytic reaction unit and exchanges heat between the exhaust gas and the catalytic reaction unit to supply heat that is required for an endothermic reaction of the catalytic reaction unit, wherein heat of the exhaust gas is used for the endothermic reaction of a catalyst, such that a separate heat source for the endothermic reaction is unnecessary.

Abstract: A semiconductor device in which a threshold voltage is adjusted by a simplified process and current characteristics are improved, a method for fabricating the semiconductor device, and a layout design method for the semiconductor device. The semiconductor device may include a device isolation layer defining an active region in a substrate, a gate electrode extending in a first direction on the active region, a high-concentration impurity region in the active region on a side of the gate electrode and extending in the first direction, and a low-concentration impurity region at least partly surrounding the high-concentration impurity region. The active region may include a plurality of connecting sections below the gate electrode that protrude from the low-concentration impurity region and extend in a second direction that intersects the first direction. The device isolation layer may include a plurality of separating sections that separate the connecting sections from each other.

Abstract: Provided is a metal catalyst support including: a case having a space through which exhaust gas passes; and flat plates and corrugated plates which are alternately stacked in the case and coated with a catalyst, wherein the corrugated plates are formed such that a first corrugated plate and a second corrugated plate are disposed with the flat plate therebetween, the first corrugated plate and the second corrugated plate are disposed such that a first corrugated portion and a second corrugated portion are alternately and repeatedly formed, and the vertex of the first corrugated portion and the vertex of the second corrugated portion face and coincide with each other, to thereby minimize deformation during thermal expansion due to external impact, vibration and temperature change.

Abstract: A nanoscale structure includes an array of pillars over an underlying layer, a separation wall layer including first separation walls formed over sidewalls of the pillars, and a block co-polymer (BCP) layer formed over the separation wall layer and filling gaps between the pillars. The BCP layer is phase-separated to include first domains that provide second separation walls formed over the first separation walls and second domains that are separated from each other by the first domains.

Abstract: A semiconductor chip includes a substrate including a circuit area having a rectangular shape and a peripheral area surrounding the circuit area, a key area being overlapping a part of the circuit area and a part of the peripheral area, a plurality of drive circuit cells in the circuit area, and a conductive reference line on the peripheral area and extending in a first direction parallel to a first edge among four edges of the rectangular shape of the circuit area.