Abstract: A cathode active material for a lithium secondary battery includes a lithium metal oxide particle and a thio-based compound formed on at least portion of a surface of the lithium metal oxide particle. The thio-based compound has a double bond that contains a sulfur atom. Chemical stability of the lithium metal oxide particle may be improved and surface residues may be reduced by the thio-based compound.

Abstract: An apparatus for supplying food ingredients according to the present disclosure includes a food ingredient lifting part configured to separate and move upward a food ingredient stack from a food ingredient cassette on which food ingredients including a plurality of stacked food ingredients are seated, a food ingredient separation part configured to suck and move upward a single sheet of a food ingredient from the food ingredient stack moved upward by the food ingredient lifting part, and a horizontal movement part configured to transfer forward the single sheet of the food ingredient moved upward by the food ingredient separation part.

Abstract: A system for manufacturing edible food products according to the present disclosure includes a first food ingredient supply apparatus configured to separate a single sheet of a first food ingredient from a first food ingredient stack including a plurality of stacked first food ingredients and supply the single sheet of first food ingredient, a second food ingredient supply apparatus configured to separate a single sheet of a second food ingredient from a second food ingredient stack including a plurality of stacked second food ingredients and supply the single sheet of second food ingredient, and a pressing device configured to form an edible food product by pressing a semi-finished product formed by seating the supplied single sheet of the first food ingredient on the supplied single sheet of the second food ingredient.

Abstract: A method for operating a memory device is provided. The method includes providing a high voltage signal to a memory cell array including a plurality of memory cells using a first wiring, providing a logic signal to the memory cell array using a second wiring, and providing a shielding signal to the memory cell array using a third wiring arranged between the first wiring and the second wiring. A highest voltage level of the logic signal is lower than a highest voltage level of the high voltage signal, and the shielding signal includes a negative first voltage level in a first mode and a positive second voltage level in a second mode.

Abstract: A cutting apparatus according to the present disclosure includes a cutting roller including a cutting body having a cylindrical shape and configured to rotate about an axis defined in a leftward/rightward direction, and cutting blades protruding outward in a radial direction of the cutting body further than a surface of the cutting body to cut an edible food product provided in a forward/rearward direction, and a cutting base part disposed at a position facing the cutting roller based on the edible food product to support the edible food product to be cut by the cutting roller.

Abstract: Provided is a hydrogen reformer using exhaust gas, comprising: a catalytic reaction unit which generates a reforming gas containing hydrogen when exhaust gas generated in an engine and fuel are supplied thereto; and a heat exchange chamber which is mounted on an outer surface of the catalytic reaction unit and exchanges heat between the exhaust gas and the catalytic reaction unit to supply heat that is required for an endothermic reaction of the catalytic reaction unit, wherein heat of the exhaust gas is used for the endothermic reaction of a catalyst, such that a separate heat source for the endothermic reaction is unnecessary.

Abstract: A ballast water-free ship using a difference in the depth of the bottom shell plate between the bow/stern and the midship section and a construction method thereof. A stepped portion is formed between either the bow or the stern and the midship section, such that the depth of the bottom shell plate of either the bow or the stern differs from the depth of the bottom shell plate of the cargo containment in the midship section, so that cargo can be loaded and unloaded without ballast water operation.

Abstract: Provided is a method of manufacturing a metal catalyst support including: transferring a plate member of the same size along a transfer unit; aligning the plate member so that a front portion of the plate member is located at a start point when the plate member reaches a set position; forming a corrugated plate by alternately forming a first corrugated portion and a second corrugated portion on the plate member which is aligned at the start point; and laminating the fabricated corrugated plates and the flat plates alternately in a case.

Abstract: A ballast water-free ship using a difference in the depth of the bottom shell plate between the bow/stern and the midship section and a construction method thereof. A stepped portion is formed between either the bow or the stern and the midship section, such that the depth of the bottom shell plate of either the bow or the stern differs from the depth of the bottom shell plate of the cargo containment in the midship section, so that cargo can be loaded and unloaded without ballast water operation.

Abstract: A method of driving a light-source module includes adjusting a frequency of a boosting switching signal based on a dimming signal which controls luminance of a light-emitting diode (“LED”) string of the light-source module, where the LED string comprises a plurality of LEDs connected to each other in series, and controlling a main transistor in response to the boosting switching signal to transfer a driving voltage to the LED string.

Abstract: The semiconductor device including a substrate comprising a chip region and a guard-ring region which surrounds a side surface of the chip region, an isolation layer configured to define an active region within the guard-ring region, a first doping layer in the active region and doped with first impurities having a first doping concentration, a second doping layer on the first doping layer and in the active region, the second doping layer doped with second impurities having a same conductivity type as the first impurities of the first doping layer, the second impurities having a second doping concentration, the second doping concentration being greater than the first doping concentration, a first gate electrode on the second doping layer, and a first wire layer on the first gate electrode may be provided.

Abstract: A method of driving a light-source module includes adjusting a frequency of a boosting switching signal based on a dimming signal which controls luminance of a light-emitting diode (“LED”) string of the light-source module, where the LED string comprises a plurality of LEDs connected to each other in series, and controlling a main transistor in response to the boosting switching signal to transfer a driving voltage to the LED string.

Abstract: Provided is a catalyst carrier module for a large-capacity catalyst reactor, which can be assembled in a large-capacity structure by laminating a flat plate and a wave plate to be fixed in a can without brazing the flat plate and the wave plate constituting a cell forming body, for use in a catalytic reactor requiring a large-capacity exhaust gas treatment. The catalyst carrier module (or block) includes: a can of a rectangular tube shape having an inlet and an outlet; at least one cell forming body in which a plurality of hollow cells are formed by alternately laminating a wave plate and a flat plate which are coated with a catalyst on a surface thereof and inserted into the can; and a fixing unit installed at the inlet and the outlet of the can to prevent the at least one cell forming body from detaching from the can.

Abstract: Integrated circuit devices are provided. An integrated circuit device includes a substrate and a device isolation film on the substrate. An active region of the substrate is defined by the device isolation film on the substrate and has a first width in a horizontal direction. A gate electrode is on the active region and has a second width equal to or less than the first width of the active region in the horizontal direction. The integrated circuit device includes an insulating spacer over the device isolation film and the active region.

Abstract: A semiconductor device is provided that is capable of enhancing a layout efficiency by providing a plurality of gamma voltages using a resistive line of a single body. The semiconductor device may include a plurality of connection structures arranged in a first direction, a resistive line connected to the plurality of connection structures and including a plurality of resistive regions arranged in the first direction, each of the resistive regions being defined between a respective pair of adjacent connection structures of the plurality of connection structures, and a plurality of conductive pads on the plurality of connection structures and connected to the resistive line. At least two of the plurality of conductive pads are configured for use as voltage nodes.

Abstract: A semiconductor device in which a threshold voltage is adjusted by a simplified process and in which current characteristics are improved may include a device isolation layer defining an active region in a substrate, a gate electrode extending in a first direction on the active region, a high-concentration impurity region in the active region on a side of the gate electrode and extending in the first direction, and a low-concentration impurity region at least partly surrounding the high-concentration impurity region. The active region may include a plurality of connecting sections below the gate electrode that protrude from the low-concentration impurity region and extend in a second direction that intersects the first direction. The device isolation layer may include a plurality of separating sections that separate the connecting sections from each other.

Abstract: The semiconductor device including a substrate comprising a chip region and a guard-ring region which surrounds a side surface of the chip region, an isolation layer configured to define an active region within the guard-ring region, a first doping layer in the active region and doped with first impurities having a first doping concentration, a second doping layer on the first doping layer and in the active region, the second doping layer doped with second impurities having a same conductivity type as the first impurities of the first doping layer, the second impurities having a second doping concentration, the second doping concentration being greater than the first doping concentration, a first gate electrode on the second doping layer, and a first wire layer on the first gate electrode may be provided.

Abstract: Provided is a method of manufacturing a metal catalyst support including: transferring a plate member of the same size along a transfer unit; aligning the plate member so that a front portion of the plate member is located at a start point when the plate member reaches a set position; forming a corrugated plate by alternately forming a first corrugated portion and a second corrugated portion on the plate member which is aligned at the start point; and laminating the fabricated corrugated plates and the flat plates alternately in a case.

Abstract: Provided is a metal catalyst support including: a case having a space through which exhaust gas passes; and flat plates and corrugated plates which are alternately stacked in the case and coated with a catalyst, wherein the corrugated plates are formed such that a first corrugated plate and a second corrugated plate are disposed with the flat plate therebetween, the first corrugated plate and the second corrugated plate are disposed such that a first corrugated portion and a second corrugated portion are alternately and repeatedly formed, and the vertex of the first corrugated portion and the vertex of the second corrugated portion face and coincide with each other, to thereby minimize deformation during thermal expansion due to external impact, vibration and temperature change.

Abstract: A semiconductor chip includes a substrate including a circuit area having a rectangular shape and a peripheral area surrounding the circuit area, a key area being overlapping a part of the circuit area and a part of the peripheral area, a plurality of drive circuit cells in the circuit area, and a conductive reference line on the peripheral area and extending in a first direction parallel to a first edge among four edges of the rectangular shape of the circuit area.