Abstract: A method of manufacturing a photomask includes: providing a photomask; exposing the photomask to obtain an aerial image of the photomask and evaluating the photomask using the aerial image; and altering an optical parameter of the photomask associated with the aerial image according to the result of evaluation.

Abstract: Disclosed are an ink composition and a method for fabricating a liquid crystal display (LCD) device using the same, wherein in forming patterns of the LCD device using an imprint lithography and a roll printing, an ink composition with high thermal resistance, consisting of polymer resin and additive both endurable even at a high temperature is used to form fine patterns with constantly maintaining pattern linewidths and line intervals, the ink composition consisting of 5-45% by weight of polymer resin, 5-45% by weight of additive added to retain thermal stability, and 50-90% by weight of organic solvent, wherein the ink composition is endurable even at a high temperature of 90-250° C.

Abstract: A photomask or equivalent optical component includes a scattering element in the medium of a substrate, which actively modifies (adjusts/filters the intensity, shape, and/or components of) light that propagates through the substrate. The substrate has a front surface and a back surface and is transparent to exposure light of a photolithography process, i.e., light of given wavelength, at least one mask pattern at the front surface of the substrate and the image of which is to be transferred to an electronic device substrate in a photolithographic process using the photomask, a blind pattern at the front surface of the substrate and opaque to the exposure light, and the scattering element. The scattering element, in addition to being formed in the medium of the substrate, is situated below the blind pattern as juxtaposed with the blind pattern in the direction of the thickness of the substrate.

Abstract: Disclosed are an ink composition and a method for fabricating a liquid crystal display (LCD) device using the same, wherein in forming patterns of the LCD device using an imprint lithography and a roll printing, an ink composition with high thermal resistance, consisting of polymer resin and additive both endurable even at a high temperature is used to form fine patterns with constantly maintaining pattern linewidths and line intervals, the ink composition consisting of 5-45% by weight of polymer resin, 5-45% by weight of additive added to retain thermal stability, and 50-90% by weight of organic solvent, wherein the ink composition is endurable even at a high temperature of 90-250° C.

Abstract: Disclosed is an electrostatic chuck with a temperature sensing unit, exposure equipment having the electrostatic chuck, and a method of detecting temperature on photomask surfaces. The temperature sensing unit and method of detecting temperature may include obtaining reflectance of a photomask using a multi-wavelength interferometer and determining a temperature on the photomask based on the reflectance.

Abstract: Provided are photomask registration errors of which have been corrected and a method of correcting the registration errors of a photomask. The photomask includes a photomask substrate, an optical pattern formed on one surface of the photomask substrate, and a plurality of stress generation portions formed in the photomask substrate. A method of correcting the registration errors of a photomask includes the steps of forming an optical pattern on a photomask substrate, measuring the registration errors of the optical pattern, and forming a plurality of stress generation portions in the photomask substrate so that the stress generation portions correspond to the measured registration errors.

Abstract: A photomask or equivalent optical component includes a scattering element in the medium of a substrate, which actively modifies (adjusts/filters the intensity, shape, and/or components of) light that propagates through the substrate. The substrate has a front surface and a back surface and is transparent to exposure light of a photolithography process, i.e., light of given wavelength, at least one mask pattern at the front surface of the substrate and the image of which is to be transferred to an electronic device substrate in a photolithographic process using the photomask, a blind pattern at the front surface of the substrate and opaque to the exposure light, and the scattering element. The scattering element, in addition to being formed in the medium of the substrate, is situated below the blind pattern as juxtaposed with the blind pattern in the direction of the thickness of the substrate.

Abstract: A photosensitive resin composition and a method for forming an organic film on a substrate are provided. Because the photosensitive resin composition for imprinting includes an erythrotol-based monomer or oligomer, an organic film formed by the photosensitive resin composition for imprinting has improved restoring force. Therefore, the photosensitive resin composition is appropriate for imprinting processes.

Abstract: Disclosed are an ink composition and a method for fabricating a liquid crystal display (LCD) device using the same, wherein in forming patterns of the LCD device using an imprint lithography and a roll printing, an ink composition with high thermal resistance, consisting of polymer resin and additive both endurable even at a high temperature is used to form fine patterns with constantly maintaining pattern linewidths and line intervals, the ink composition consisting of 5-45% by weight of polymer resin, 5-45% by weight of additive added to retain thermal stability, and 50-90% by weight of organic solvent, wherein the ink composition is endurable even at a high temperature of 90-250° C.

Abstract: A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.

Abstract: Provided are an off-axis illumination apparatus, an exposure apparatus, and an off-axis illumination method. The off-axis illumination apparatus may include a mask, a light source for emitting light to the mask, and an incident angle varying section for varying an incident angle of the light. The exposure apparatus may include the off-axis illumination apparatus in addition to a wafer stage and an optical detector. The off-axis illumination method may include irradiating light from the light source to a mask, and moving positions of the light source and the mask to vary an incident angle of the light to the mask.

Abstract: Provided are equipment and a method for measuring a transmittance of a photomask. The system includes an acoustic optical deflector (AOD) substrate interposed between a light source and the photomask. The AOD is adapted to deflect a laser beam to an oblique incidence angle with respect to a surface of the photomask. A radio frequency (RF) signal source is coupled with the AOD substrate. Varying the frequency of the signal applied to the AOD substrate acts to change the refractive degree of the substrate, thereby changing an angle of deflection of the incident laser beam. A photodetector is positioned to receive the laser beam passing through the photomask and is adapted to measure an intensity of the laser beam which has penetrated the photomask. As a result, a transmittance of the photomask can be measured under off axis illumination (OAI).

Abstract: A method of manufacturing a photomask includes: providing a photomask; exposing the photomask to obtain an aerial image of the photomask and evaluating the photomask using the aerial image; and altering an optical parameter of the photomask associated with the aerial image according to the result of evaluation.

Abstract: Provided are equipment and a method for measuring a transmittance of a photomask. The system includes an acoustic optical deflector (AOD) substrate interposed between a light source and the photomask. The AOD is adapted to deflect a laser beam to an oblique incidence angle with respect to a surface of the photomask. A radio frequency (RF) signal source is coupled with the AOD substrate. Varying the frequency of the signal applied to the AOD substrate acts to change the refractive degree of the substrate, thereby changing an angle of deflection of the incident laser beam. A photodetector is positioned to receive the laser beam passing through the photomask and is adapted to measure an intensity of the laser beam which has penetrated the photomask. As a result, a transmittance of the photomask can be measured under off axis illumination (OAI).

Abstract: Provided are photomask registration errors of which have been corrected and a method of correcting the registration errors of a photomask. The photomask includes a photomask substrate, an optical pattern formed on one surface of the photomask substrate, and a plurality of stress generation portions formed in the photomask substrate. A method of correcting the registration errors of a photomask includes the steps of forming an optical pattern on a photomask substrate, measuring the registration errors of the optical pattern, and forming a plurality of stress generation portions in the photomask substrate so that the stress generation portions correspond to the measured registration errors.

Abstract: Adjusting a curvature of a substrate includes forming at least one deformed portion in a predetermined region of a substrate, wherein the substrate includes a curved region before forming the at least one deformed portion, and forming the at least one deformed portion includes irradiating the substrate in the predetermined region so as to fixedly displace substrate material in the predetermined region.

Abstract: An embodiment includes a method of correcting deviations of critical dimensions of patterns formed on a wafer in an extreme ultraviolet lithography (EUVL) process. The embodiment includes preparing a reflection photo mask having a reflection layer and absorption patterns that are formed on the reflection layer to define reflection regions therebetween. An exposure process is performed using the reflection photo mask, thereby forming the patterns on the wafer. Critical dimensions of the patterns are measured. A reference critical dimension is set based on the measured critical dimensions of the patterns. Critical dimension deviations are determined by comparing the measured critical dimensions of the patterns with the reference critical dimension. Energy beams having energies corresponding to the critical dimension deviations are locally irradiated onto the reflection layer, thus locally varying the thickness of the reflection layer.

Abstract: Provided are an off-axis illumination apparatus, an exposure apparatus, and an off-axis illumination method. The off-axis illumination apparatus may include a mask, a light source for emitting light to the mask, and an incident angle varying section for varying an incident angle of the light. The exposure apparatus may include the off-axis illumination apparatus in addition to a wafer stage and an optical detector. The off-axis illumination method may include irradiating light from the light source to a mask, and moving positions of the light source and the mask to vary an incident angle of the light to the mask.

Abstract: Disclosed is an electrostatic chuck with a temperature sensing unit, exposure equipment having the electrostatic chuck, and a method of detecting temperature on photomask surfaces. The temperature sensing unit and method of detecting temperature may include obtaining reflectance of a photomask using a multi-wavelength interferometer and determining a temperature on the photomask based on the reflectance.

Abstract: Provided is a method of inspecting defects in a photomask having dies with different transmittances from each other due to correction treatments. A method of inspecting defects corrects light signals transmitted through the dies or source light irradiating the dies by using transmittance maps of the dies.