Abstract: A polysilicon thin film transistor device includes a gate metal pattern including a gate electrode and a gate line formed on a substrate, the gate metal pattern having a stepped portion, a gate insulating film formed on the gate metal pattern, a polysilicon semiconductor layer formed on the gate insulating film, the polysilicon semiconductor layer including an active region, lightly doped drain regions, a source region, and a drain region, a source electrode connected to the source region and a drain electrode connected to the drain region on the polysilicon semiconductor layer, and a pixel electrode connected with the drain electrode.

Abstract: A polysilicon thin film transistor device includes a gate metal pattern including a gate electrode and a gate line formed on a substrate, the gate metal pattern having a stepped portion, a gate insulating film formed on the gate metal pattern, a polysilicon semiconductor layer formed on the gate insulating film, the polysilicon semiconductor layer including an active region, lightly doped drain regions, a source region, and a drain region, a source electrode connected to the source region and a drain electrode connected to the drain region on the polysilicon semiconductor layer, and a pixel electrode connected with the drain electrode.

Abstract: A polysilicon thin film transistor device includes a gate metal pattern including a gate electrode and a gate line formed on a substrate, the gate metal pattern having a stepped portion, a gate insulating film formed on the gate metal pattern, a polysilicon semiconductor layer formed on the gate insulating film, the polysilicon semiconductor layer including an active region, lightly doped drain regions, a source region, and a drain region, a source electrode connected to the source region and a drain electrode connected to the drain region on the polysilicon semiconductor layer, and a pixel electrode connected with the drain electrode.

Abstract: An LCD device and a method for manufacturing the same is disclosed, in which it is possible to correct a problem of insufficient or excessive supply of liquid crystal in an LCD device by controlling an amount of liquid crystal. The method includes preparing a liquid crystal cell comprised of a first substrate, a second substrate, a liquid crystal layer between the first and second substrates, and a first sealant formed in the periphery of the liquid crystal layer between the first and second substrates; measuring an amount of liquid crystal provided to the inside of liquid crystal cell; forming an inlet for liquid crystal in the first sealant; and regulating the amount of liquid crystal by supplying or discharging the liquid crystal through the inlet; and sealing the inlet.

Abstract: A liquid crystal display device having a switching element in a pixel portion and a CMOS element in a driving portion includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a polycrystalline silicon layer on the gate insulating layer, the polycrystalline silicon layer having an active region in a central portion corresponding to the gate electrode and an ohmic contact region at side portions of the active region; an interlayer insulating layer having a set of contact holes for contacting the polycrystalline silicon layer at the side portions; and source and drain electrodes spaced apart from each other on the interlayer insulating layer, the source and drain electrodes contacting the polycrystalline silicon layer through the set of contact holes.

Abstract: A liquid crystal display (LCD) device and its fabrication method includes providing a substrate divided into pixel part and pad parts; forming a gate electrode and a gate line at the pixel part through a first masking process; forming a first insulation film; forming an active pattern and source and drain electrodes at an upper portion of the gate electrode of the pixel part and forming a data line substantially crossing the gate line to define a pixel region through a second masking process; forming a pixel electrode directly electrically connected with the drain electrode at the pixel region of the pixel part through a third masking process; and attaching first and second substrates. A pixel electrode is formed to directly electrically connect with a drain electrode by selectively etching a transparent conductive film without forming a contact hole.

Abstract: A liquid crystal display device having a switching element in a pixel portion and a CMOS element in a driving portion includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a polycrystalline silicon layer on the gate insulating layer, the polycrystalline silicon layer having an active region in a central portion corresponding to the gate electrode and an ohmic contact region at side portions of the active region; an interlayer insulating layer having a set of contact holes for contacting the polycrystalline silicon layer at the side portions; and source and drain electrodes spaced apart from each other on the interlayer insulating layer, the source and drain electrodes contacting the polycrystalline silicon layer through the set of contact holes.

Abstract: A liquid crystal display (LCD) device is disclosed, in which a plurality of spacers are formed around one corresponding projection as the same size and spaced apart from each other, to prevent the deformation of column spacers and to prevent the touch defect, the LCD device including first and second substrates facing each other; gate and data lines crossing each other to define a unit pixel region on the first substrate; a thin film transistor at a crossing area of the gate and data lines; a projection on the predetermined portion of the gate line; a plurality of column spacers overlapped with the predetermined portions of the projection and provided on the second substrate at regular intervals; and a liquid crystal layer between the first and second substrates.

Abstract: A liquid crystal display device having a switching element in a pixel portion and a CMOS element in a driving portion includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a polycrystalline silicon layer on the gate insulating layer, the polycrystalline silicon layer having an active region in a central portion corresponding to the gate electrode and an ohmic contact region at side portions of the active region; an interlayer insulating layer having a set of contact holes for contacting the polycrystalline silicon layer at the side portions; and source and drain electrodes spaced apart from each other on the interlayer insulating layer, the source and drain electrodes contacting the polycrystalline silicon layer through the set of contact holes.

Abstract: A fabrication method of a polysilicon LCD device includes: forming a gate electrode on a substrate; forming a gate insulating layer over the gate electrode; forming a first amorphous semiconductor layer and a second amorphous semiconductor layer over the gate insulating layer; crystallizing the first and second amorphous semiconductor layers; forming source/drain electrodes on the crystallized second semiconductor layer; forming a passivation layer over the source/drain electrodes; and forming a pixel electrode connected to one of the source/drain electrodes.

Abstract: An LCD device and a method for manufacturing the same is disclosed, in which it is possible to correct a problem of insufficient or excessive supply of liquid crystal in an LCD device by controlling an amount of liquid crystal. The method includes preparing a liquid crystal cell comprised of a first substrate, a second substrate, a liquid crystal layer between the first and second substrates, and a first sealant formed in the periphery of the liquid crystal layer between the first and second substrates; measuring an amount of liquid crystal provided to the inside of liquid crystal cell; forming an inlet for liquid crystal in the first sealant; and regulating the amount of liquid crystal by supplying or discharging the liquid crystal through the inlet; and sealing the inlet.

Abstract: A method of fabricating a liquid crystal display device includes: preparing a first substrate in which a plurality of first panels is formed; preparing a second substrate in which a plurality of second panels is formed; forming a seal pattern around an outer edge of the panel, the seal pattern defining an active region and a dummy region and having at one side a protruding portion extending to the dummy region; dropping liquid crystal more than the reference amount to the active region; bonding the first and second substrates together by the seal pattern; separating a plurality of liquid crystal panels by cutting the first and second substrates, the liquid crystal panels being formed by bonding the first and second panels; and removing surplus liquid crystal from the liquid crystal panel by pressurizing the liquid crystal panel.

Abstract: A liquid crystal display device includes a first substrate and a second substrate facing each other; a gate line and a data line crossing each other to define a pixel region on the first substrate; a thin film transistor on the first substrate and adjacent to the pixel region; a column spacer located on the second substrate; a protrusion located on the first substrate at a location corresponding to the protrusion, the protrusion having a hollow portion and a surrounding wall surrounding the hollow portion, the hollow portion being exposed at the top side of the protrusion; and a liquid crystal layer interposed between the first substrate and the second substrate.

Abstract: An LCD device and a method for manufacturing the same is disclosed, in which it is possible to correct a problem of insufficient or excessive supply of liquid crystal in an LCD device by controlling an amount of liquid crystal. The method includes preparing a liquid crystal cell comprised of a first substrate, a second substrate, a liquid crystal layer between the first and second substrates, and a first sealant formed in the periphery of the liquid crystal layer between the first and second substrates; measuring an amount of liquid crystal provided to the inside of liquid crystal cell; forming an inlet for liquid crystal in the first sealant; and regulating the amount of liquid crystal by supplying or discharging the liquid crystal through the inlet; and sealing the inlet.

Abstract: An LCD device and a method for manufacturing the same is disclosed, in which it is possible to correct a problem of insufficient or excessive supply of liquid crystal in an LCD device by controlling an amount of liquid crystal. The method includes preparing a liquid crystal cell comprised of a first substrate, a second substrate, a liquid crystal layer between the first and second substrates, and a first sealant formed in the periphery of the liquid crystal layer between the first and second substrates; measuring an amount of liquid crystal provided to the inside of liquid crystal cell; forming an inlet for liquid crystal in the first sealant; and regulating the amount of liquid crystal by supplying or discharging the liquid crystal through the inlet; and sealing the inlet.

Abstract: A method of fabricating a liquid crystal display device includes: preparing a first substrate in which a plurality of first panels is formed; preparing a second substrate in which a plurality of second panels is formed; forming a seal pattern around an outer edge of the panel, the seal pattern defining an active region and a dummy region and having at one side a protruding portion extending to the dummy region; dropping liquid crystal more than the reference amount to the active region; bonding the first and second substrates together by the seal pattern; separating a plurality of liquid crystal panels by cutting the first and second substrates, the liquid crystal panels being formed by bonding the first and second panels; and removing surplus liquid crystal from the liquid crystal panel by pressurizing the liquid crystal panel.

Abstract: A method of forming a polycrystalline silicon layer. An amorphous silicon layer on a substrate is completely melted using a laser beam passed through a mask so as to form a polycrystalline silicon layer. The upper portion of the polycrystalline silicon layer is then re-melted and re-crystallized using a laser beam passed through a mask. The mask includes a high transmittance region for completely melting the amorphous silicon layer and a low transmittance region for re-melting the upper portion of the polycrystalline silicon layer.

Abstract: A method of forming a polycrystalline silicon layer. An amorphous silicon layer on a substrate is completely melted using a laser beam passed through a mask so as to form a polycrystalline silicon layer. The upper portion of the polycrystalline silicon layer is then re-melted and re-crystallized using a laser beam passed through a mask. The mask includes a high transmittance region for completely melting the amorphous silicon layer and a low transmittance region for re-melting the upper portion of the polycrystalline silicon layer.

Abstract: A mask and its application in sequential lateral solidification (SLS) crystallization of amorphous silicon. The mask includes a light absorptive portion for blocking a laser beam and first and second light-transmitting portions each having an echelon formation with a tier-shaped outline. The first and second light-transmitting portions pass a laser beam and include a plurality of adjacent rectangular-shaped patterns that comprise the echelon formation. The second light-transmitting portion is located between the first light-transmitting portions and has fewer shaped-shaped patterns than the first light-transmitting portions. In operation, the mask moves transversely by no more than the width of the shaped-shaped patterns as a laser performs SLS crystallization. The first and second light-transmitting portions control grain growth such that high quality polycrystalline silicon is formed.

Abstract: A liquid crystal display device having a switching element in a pixel portion and a CMOS element in a driving portion includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a polycrystalline silicon layer on the gate insulating layer, the polycrystalline silicon layer having an active region in a central portion corresponding to the gate electrode and an ohmic contact region at side portions of the active region; an interlayer insulating layer having a set of contact holes for contacting the polycrystalline silicon layer at the side portions; and source and drain electrodes spaced apart from each other on the interlayer insulating layer, the source and drain electrodes contacting the polycrystalline silicon layer through the set of contact holes.

Abstract: An expansion joint for interior or exterior use including a fire barrier comprised of a fire resistant inorganic refractory fiber fabric sheet which supports resilient fire resistant inorganic refractory fibers. The support sheet may be closed to form a sleeve. When used as an exterior expansion joint a weather resistant cover comprising a bellows or a cover plate is employed. When used in an interior application a cover plate may be employed to form a bridge over the expansion joint to provide a continuous flooring or to provide additional fire resistance. The fabric is attached to adjacent structure by mounting flanges in the form of a bifurcated clamp, and one of the fabric-engaging clamp faces may be crimped and pierced to better grip the fabric.