Patents by Inventor Myoung-Woo Son

Myoung-Woo Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Resistive RAM, method for fabricating the same, and method for driving the same
    Patent number: 9214631
    Abstract: A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: December 15, 2015
    Assignees: SK Hynix Inc., Gwangju Institute of Science and Technology
    Inventors: Hyun-Sang Hwang, Xinjun Liu, Myoung-Woo Son
  • Resistive RAM, method for fabricating the same, and method for driving the same
    Patent number: 9208869
    Abstract: A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: December 8, 2015
    Assignees: SK Hynix Inc., Gwangju Institute of Science and Technology
    Inventors: Hyun-Sang Hwang, Xinjun Liu, Myoung-Woo Son
  • Resistive RAM, method for fabricating the same, and method for driving the same
    Patent number: 9117513
    Abstract: A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide.
    Type: Grant
    Filed: July 20, 2012
    Date of Patent: August 25, 2015
    Assignees: SK Hynix Inc., Gwangju Institute Of Science And Technology
    Inventors: Hyun-Sang Hwang, Xinjun Liu, Myoung-Woo Son
  • RESISTIVE RAM, METHOD FOR FABRICATING THE SAME, AND METHOD FOR DRIVING THE SAME
    Publication number: 20130021835
    Abstract: A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide.
    Type: Application
    Filed: July 20, 2012
    Publication date: January 24, 2013
    Inventors: Hyun-Sang Hwang, Xinjun Liu, Myoung-Woo Son