Abstract: A polysilicon thin film transistor device includes a gate metal pattern including a gate electrode and a gate line formed on a substrate, the gate metal pattern having a stepped portion, a gate insulating film formed on the gate metal pattern, a polysilicon semiconductor layer formed on the gate insulating film, the polysilicon semiconductor layer including an active region, lightly doped drain regions, a source region, and a drain region, a source electrode connected to the source region and a drain electrode connected to the drain region on the polysilicon semiconductor layer, and a pixel electrode connected with the drain electrode.

Abstract: A liquid crystal display (LCD) device and its fabrication method includes providing a substrate divided into pixel part and pad parts; forming a gate electrode and a gate line at the pixel part through a first masking process; forming a first insulation film; forming an active pattern and source and drain electrodes at an upper portion of the gate electrode of the pixel part and forming a data line substantially crossing the gate line to define a pixel region through a second masking process; forming a pixel electrode directly electrically connected with the drain electrode at the pixel region of the pixel part through a third masking process; and attaching first and second substrates. A pixel electrode is formed to directly electrically connect with a drain electrode by selectively etching a transparent conductive film without forming a contact hole.

Abstract: A liquid crystal display device includes first and second substrates facing each other, gate and data lines crossing each other to define a unit pixel region on the first substrate, a thin film transistor adjacent to a crossing of the gate and data lines, an insulating layer on the gate line, a protrusion over the insulating layer, a plurality of column spacers overlapping portions of the protrusion, and a liquid crystal layer between the first and second substrates.

Abstract: A liquid crystal display device includes a first substrate and a second substrate facing each other; a gate line and a data line crossing each other to define a pixel region on the first substrate; a thin film transistor on the first substrate and adjacent to the pixel region; a column spacer located on the second substrate; a protrusion located on the first substrate at a location corresponding to the protrusion, the protrusion having a hollow portion and a surrounding wall surrounding the hollow portion, the hollow portion being exposed at the top side of the protrusion; and a liquid crystal layer interposed between the first substrate and the second substrate.

Abstract: A polysilicon thin film transistor device includes a gate metal pattern including a gate electrode and a gate line formed on a substrate, the gate metal pattern having a stepped portion, a gate insulating film formed on the gate metal pattern, a polysilicon semiconductor layer formed on the gate insulating film, the polysilicon semiconductor layer including an active region, lightly doped drain regions, a source region, and a drain region, a source electrode connected to the source region and a drain electrode connected to the drain region on the polysilicon semiconductor layer, and a pixel electrode connected with the drain electrode.