Abstract: A method of blocking access of a threatening user includes (a) executing an application on a user terminal, (b) collecting, by the user terminal, access information and transmitting the access information to a server unit, (c) determining, by the server unit, whether a user is a target whose access is to be blocked on the basis of the access information, (d) transmitting, by the server unit, a normal execution code or a blocking message to the user terminal according to a result of the determination, and (e) executing the user terminal according to the normal execution code or the blocking message.

Abstract: The present invention provides a method of manufacturing a semiconductor device, which comprises the steps of: forming a buffer layer formed of a dual-layer structure of a buffer oxide film and a buffer nitride film on a semiconductor substrate formed with a certain lower structure; forming source/drain by performing an ion injection process after forming the buffer layer; defining a gate hole by etching the buffer layer after forming the source/drain; forming a gate oxide film on the defined gate hole; forming a gate material to bury the defined gate hole; forming a T-shape gate electrode through a process of etching the gate material using the buffer nitride film as an etching stop film; and forming a contact hole after forming an inter-layer dielectric on a resulting structure formed with the T-shape gate electrode.

Abstract: The present invention relates to a method of manufacturing a semiconductor device, in which a gate electrode is formed in a T-shape in order to increase the size of a top surface of the gate electrode, thereby providing a stable silicide forming condition and preventing contact misalignment. To this end, a method of manufacturing a semiconductor device of the present invention comprises the steps of: forming a buffer layer formed in a dual structure of a buffer oxide film and a buffer nitride film on a semiconductor substrate formed with a certain lower structure; defining a gate region by etching the buffer layer; forming a gate oxide film on the substrate of the defined gate region; forming a gate material to bury the defined gate region; forming a T-shape gate electrode through a process of etching the gate material using the buffer nitride film as an etching stop film; and forming a contact hole after forming an inter-layer dielectric on a resulting material formed with the T-shape gate electrode.