Abstract: Disclosed is a laser radar apparatus. The laser radar apparatus includes: a light transmission unit configured to output a laser pulse by using a light source; a light reception unit configured to receive a reflected laser pulse in connection with the laser pulse; and a controller configured to adjust a repetition rate of the laser pulse of the light source, in which the controller adjusts the repetition rate of the laser pulse based on at least one of reception power, a target distance, a movement speed, a vertical angle, and a radiation angle.

Abstract: Provided herein a laser radar apparatus including a plurality of light transmission and reception modules arranged concavely in an opposite direction to a scanning direction based on a surface vertical to the scanning direction, wherein each of the plurality of light transmission and reception modules comprises a transmitter configured to deflect a laser beam and to irradiate the deflected laser beam to a target; and a receiver configured to receive the laser beam reflected from the target.

Abstract: Disclosed are a method and an apparatus for implementing an active imaging system. A method of obtaining an image in an active imaging system including: dividing an imaging region, and determining a plurality of divided imaging regions; scanning each of the plurality of divided imaging regions based on a laser; collecting reflected light for each of the plurality of divided imaging regions, and generating a plurality of divided images by an image sensor; and generating a whole image for the imaging region based on the plurality of divided images.

Abstract: Disclosed are a method and an apparatus for implementing an active imaging system. A method of obtaining an image in an active imaging system including: dividing an imaging region, and determining a plurality of divided imaging regions; scanning each of the plurality of divided imaging regions based on a laser; collecting reflected light for each of the plurality of divided imaging regions, and generating a plurality of divided images by an image sensor; and generating a whole image for the imaging region based on the plurality of divided images.

Abstract: Disclosed is an apparatus for obtaining an image. The apparatus for obtaining an image includes a light source, a scanner, a first beam splitter, and a light receiving unit. The light source generates a laser pulse. The scanner irradiates the laser pulse in a first direction. The first beam splitter splits the laser pulse irradiated in the first direction in the first direction and a second direction and irradiates the split laser pulse. The light receiving unit detects reflected light. Accordingly, it is possible to irradiate light to a wide range by a light source having a relatively small divergent angle.

Abstract: Disclosed is a laser radar apparatus. The laser radar apparatus includes: a light transmission unit configured to output a laser pulse by using a light source; a light reception unit configured to receive a reflected laser pulse in connection with the laser pulse; and a controller configured to adjust a repetition rate of the laser pulse of the light source, in which the controller adjusts the repetition rate of the laser pulse based on at least one of reception power, a target distance, a movement speed, a vertical angle, and a radiation angle.

Abstract: Provided herein a laser radar apparatus including a plurality of light transmission and reception modules arranged concavely in an opposite direction to a scanning direction based on a surface vertical to the scanning direction, wherein each of the plurality of light transmission and reception modules comprises a transmitter configured to deflect a laser beam and to irradiate the deflected laser beam to a target; and a receiver configured to receive the laser beam reflected from the target.

Abstract: Provided is an FPA module capable of further improving a quality of an obtained 3-dimensional image by adjusting an interval of an arrangement of optical detectors and a size of the optical detector within an FPA module for obtaining the 3-dimensional image. An FPA module for obtaining a 3-dimensional image according to an exemplary embodiment of the present disclosure includes a plurality of light detectors configured to detect light reflected from a monitoring target, in which the plurality of light detectors is disposed at different intervals according to positions.

Abstract: A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.

Abstract: A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.

Abstract: A method of manufacturing a photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal. A detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically separated from each other using a polyamide, whereby a PN junction surface of the photodiode is buried to reduce surface leakage current and improve electrical reliability, and the structure of the control devices can be simplified to improve image signal reception characteristics.

Abstract: A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

Abstract: A photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal and a manufacturing method thereof are provided. According to the photo-detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate, so that it is possible to simplify manufacturing processes and to greatly increasing yield. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically speared from each other by using a polyimide. Therefore, a PN junction surface of the photodiode is buried, so that a surface leakage current can be reduced and an electrical reliability can be improved. In addition, a structure of the control devices can be simplified, so that image signal reception characteristics can be improved.

Abstract: A method of manufacturing a photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal. A detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically separated from each other using a polyamide, whereby a PN junction surface of the photodiode is buried to reduce surface leakage current and improve electrical reliability, and the structure of the control devices can be simplified to improve image signal reception characteristics.

Abstract: Provided are a hetero-junction bipolar transistor (HBT) that can increase data processing speed and a method of manufacturing the hetero-junction bipolar transistor.

Abstract: A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

Abstract: A photo-detector array device integrated with a read-out integrated circuit (ROIC) monolithically integrated for a laser-radar image signal and a manufacturing method thereof are provided. According to the photo-detector array device, a photodiode and control devices for selecting and outputting a laser-radar image signal are simultaneously formed on an InP substrate, so that it is possible to simplify manufacturing processes and to greatly increasing yield. In addition, after the photodiode and the control devices are simultaneously formed on the InP substrate, the photodiode and the control devices are electrically speared from each other by using a polyimide. Therefore, a PN junction surface of the photodiode is buried, so that a surface leakage current can be reduced and an electrical reliability can be improved. In addition, a structure of the control devices can be simplified, so that image signal reception characteristics can be improved.

Abstract: A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolating the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

Abstract: A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are provided. The photo-detector includes a multi-layer compound semiconductor layer formed on a compound semiconductor substrate. A number of p-n junction diodes are arranged in a regular order in a selected region of the compound semiconductor layer, and an isolation region for individually isolated the p-n junction diodes is formed by implanting impurity ions in the multi-layer compound semiconductor layer. The isolation region and the surface of the compound semiconductor layer are positioned on the same level. The isolation region may be a Fe-impurity region.

Abstract: Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.