Abstract: The system for measuring high currents or magnetic fields using a magnetoresistive sensor (80) includes a device for applying a known predetermined magnetic bias field Hbias in a direction such that it has a non-zero component of the field perpendicular to a detection direction of the magnetoresistive sensor (80) that also corresponds to a direction of anisotropy of a layer of the magnetoresistive sensor, a device for measuring the variation in resistance of the magnetoresistive sensor (80) and means for determining the external magnetic field H to be measured from the measured resistance variation, the resistance of the sensor being subjected to a monotonic variation function.

Abstract: The system for measuring a magnetic resonance signal within a sample (4) placed in a static external magnetic field (H) includes an excitation device (1 to 3, 6 to 10) for applying high-intensity radio-frequency pulses at a predetermined emission frequency fe in a measurement zone containing the sample (4). The excitation device includes an excitation coil (3) tuned to the predetermined emission frequency fe and disposed in the vicinity of the sample (4) in such a way as to produce an electromagnetic field essentially perpendicular to the static external magnetic field (H). The system further includes at least a superconductive-magnetoresistive hybrid sensor (5) including a superconductive loop having a constriction adapted to increase significantly the current density and at least a magnetoresistive sensor placed in the immediate vicinity of said constriction (72) and being separated therefrom by an insulative deposit.

Abstract: A device for non destructive evaluation of defects in a metallic object (2) by eddy currents, comprises a field emitter (3) for emitting an alternating electromagnetic field at a first frequency fi in the neighbourhood of the metallic object (2), and a magnetoresistive sensor (1) for detecting a response signal constituted by a return electromagnetic field which is re-emitted by eddy currents induced by the alternating electromagnetic field in the metallic object (2).

Abstract: The device for sensing a RF field comprises a flux-receiving loop (1) including a circumferential path having a defined path width (d), the flux-receiving loop (1) having a portion (10) that transforms the magnetic flux flowing through the flux receiving loop (1) into a high magnetic field. The portion (10) comprises a constriction of the flux-receiving loop (1) that concentrates the current lines in the circumferential path to define a current-field transformer. At least one very low noise magnetic field transducer (12) is located at a very close distance from the constriction.

Abstract: The device for measuring magnetic field by using a magnetoresistive sensor comprises at least one magnetoresistive sensor (5), a module (50) for measuring the resistance of the magnetoresistive sensor (5), a generator module (40, 6) for generating an additional magnetic field in the space containing the magnetoresistive sensor (5), and a control unit (60) firstly for selectively controlling the generator module (40, 6) to apply an additional magnetic field pulse possessing a first value with first polarity that is positive or negative and magnitude that is sufficient to saturate the magnetoresistive sensor (5), and secondly for selectively controlling measurement of the resistance of the magnetoresistive sensor (5) by the module (50) for measuring resistance.

Abstract: For protecting a circuit 1 against a mechanical or electromagnetic attack, an active protection device attached to the circuit comprises: at least one generator 13, 14 for generating a magnetic field, at least one magnetic sensor S1, S2, S3, S4 for measuring a value of the magnetic field, an integrity circuit connected to the at least one magnetic sensor S1, S2, S3, S4 and to the circuit 1. The integrity circuit activates a reaction procedure in the circuit if the measured value of the magnetic field made by the magnetic sensor is out of a values domain, the values domain being correlated to the generated magnetic field.

Abstract: The device for sensing a magnetic field comprises a closed superconducting pick-up loop (1) having a path width (d) etched out of a single layer superconducting thin film and provided with a constriction (15) having a width (w) of narrow dimension smaller than the path width (d). The closed superconducting pick-up loop (1) constitutes a flux-to-field transformer (FFDT). At least one magnetoresistive element (2) is placed on top of or below the superconducting thin film, is isolated from the superconducting thin film by a thin insulating layer and is located so that an active part of the magnetoresistive element (2) is at the location of the constriction (15) and has a width equal to or less than the width of the constriction (15). The active part of the magnetoresistive element (2) is oriented so that the bias current in this active part is directed essentially along the constriction (15), orthogonally to the width of narrow dimension.

Abstract: The device for sensing a RF field comprises a flux-receiving loop (1) including a circumferential path having a defined path width (d), the flux-receiving loop (1) having a portion (10) that transforms the magnetic flux flowing through the flux receiving loop (1) into a high magnetic field. The portion (10) comprises a constriction of the flux-receiving loop (1) that concentrates the current lines in the circumferential path to define a current-field transformer. At least one very low noise magnetic field transducer (12) is located at a very close distance from the constriction.

Abstract: The device for sensing a magnetic field comprises a closed superconducting pick-up loop (1) having a path width (d) etched out of a single layer superconducting thin film and provided with a constriction (15) having a width (w) of narrow dimension smaller than the path width (d). The closed superconducting pick-up loop (1) constitutes a flux-to-field transformer (FFDT). At least one magnetoresistive element (2) is placed on top of or below the superconducting thin film, is isolated from the superconducting thin film by a thin insulating layer and is located so that an active part of the magnetoresistive element (2) is at the location of the constriction (15) and has a width equal to or less than the width of the constriction (15). The active part of the magnetoresistive element (2) is oriented so that the bias current in this active part is directed essentially along the constriction (15), orthogonally to the width of narrow dimension.