Abstract: The present invention relates to a method and circuit for verifying the state of a gated fuse element used with a one-time programmable CMOS memory device. A first expected state is set and a state of a first gate-ox fuse is sensed. The state of the first gate-ox fuse is compared to the first expected state to determine if they are equal, and a first signal is generated. A second expected state is set and a state of a second gate-ox fuse is sensed. The state of the second gate-ox fuse is compared to the second expected state to determine if they are equal, and a second signal is generated. A valid output is generated if both the first and second signals are in a correct state, both signals are high for example.

Abstract: An anti-fuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A channel is formed between the source and drain regions. A gate and gate oxide are formed on the channel and lightly doped source and drain extension regions are formed in the channel. The lightly doped source and drain regions extend across the channel from the source and the drain regions, respectively, occupying a substantial portion of the channel. Programming of the anti-fuse is performed by application of power to the gate and at least one of the source region and the drain region to break-down the gate oxide, which minimizes resistance between the gate and the channel.

Abstract: An anti-fuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A channel is formed between the source and drain regions. A gate and gate oxide are formed on the channel and lightly doped source and drain extension regions are formed in the channel. The lightly doped source and drain regions extend across the channel from the source and the drain regions, respectively, occupying a substantial portion of the channel. Programming of the anti-fuse is performed by application of power to the gate and at least one of the source region and the drain region to break-down the gate oxide, which minimizes resistance between the gate and the channel.

Abstract: An anti-fuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A channel is formed between the source and drain regions. A gate and gate oxide are formed on the channel and lightly doped source and drain extension regions are formed in the channel. The lightly doped source and drain regions extend across the channel from the source and the drain regions, respectively, occupying a substantial portion of the channel. Programming of the anti-fuse is performed by application of power to the gate and at least one of the source region and the drain region to break-down the gate oxide, which minimizes resistance between the gate and the channel.

Abstract: The present invention relates to a method and circuit for verifying the state of a gated fuse element used with a one-time programmable CMOS memory device. A first expected state is set and a state of a first gate-ox fuse is sensed. The state of the first gate-ox fuse is compared to the first expected state to determine if they are equal, and a first signal is generated. A second expected state is set and a state of a second gate-ox fuse is sensed. The state of the second gate-ox fuse is compared to the second expected state to determine if they are equal, and a second signal is generated. A valid output is generated if both the first and second signals are in a correct state, both signals are high for example.

Abstract: A method and circuit for verifying the state of a gated fuse element used with a one-time programmable CMOS memory device. A first expected state is set and a state of a first gate-ox fuse is sensed. The state of the first gate-ox fuse is compared to the first expected state to determine if they are equal, and a first signal is generated. A second expected state is set and a state of a second gate-ox fuse is sensed. The state of the second gate-ox fuse is compared to the second expected state to determine if they are equal, and a second signal is generated. A valid output is generated if both the first and second signals are in a correct state, both signals are high for example.

Abstract: An anti-fuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A channel is formed between the source and drain regions. A gate and gate oxide are formed on the channel and lightly doped source and drain extension regions are formed in the channel. The lightly doped source and drain regions extend across the channel from the source and the drain regions, respectively, occupying a substantial portion of the channel. Programming of the anti-fuse is performed by application of power to the gate and at least one of the source region and the drain region to break-down the gate oxide, which minimizes resistance between the gate and the channel.

Abstract: An anti-fuse device includes a substrate and laterally spaced source and drain regions formed in the substrate. A channel is formed between the source and drain regions. A gate and gate oxide are formed on the channel and lightly doped source and drain extension regions are formed in the channel. The lightly doped source and drain regions extend across the channel from the source and the drain regions, respectively, occupying a substantial portion of the channel. Programming of the anti-fuse is performed by application of power to the gate and at least one of the source region and the drain region to break-down the gate oxide, which minimizes resistance between the gate and the channel.

Abstract: The present invention relates to a method and circuit for verifying the state of a gated fuse element used with a one-time programmable CMOS memory device. A first expected state is set and a state of a first gate-ox fuse is sensed. The state of the first gate-ox fuse is compared to the first expected state to determine if they are equal, and a first signal is generated. A second expected state is set and a state of a second gate-ox fuse is sensed. The state of the second gate-ox fuse is compared to the second expected state to determine if they are equal, and a second signal is generated. A valid output is generated if both the first and second signals are in a correct state, both signals are high for example.

Abstract: A method of forming a memory cell according to the present invention. A first pass gate transistor is formed of a first transistor type. The first pass gate transistor has a gate oxide with a first thickness. The source of the first pass gate transistor is electrically connected to a first bit line, and the drain of the first pass gate transistor is electrically connected to a first state node. The gate of the first pass gate transistor is electrically connected to a memory cell enable line. A second pass gate transistor is also formed of the first transistor type. The second pass gate transistor also has a gate oxide with the first thickness. The source of the second pass gate transistor is electrically connected to a second bit line, and the drain of the second pass gate transistor is electrically connected to a second state node. The gate of the second pass gate transistor is electrically connected to the memory cell enable line. A first state node transistor is also formed of the first transistor type.