Patents by Inventor Myung Cheol Yoo

Myung Cheol Yoo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10453998
    Abstract: A light emitting device can include a metal support structure comprising Cu; an adhesion structure on the metal support structure; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure on the reflective conductive contact, in which the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure includes a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, and a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers; an interface layer on the GaN-based semiconductor structure; and a contact pad on the interface layer, in which a second thickness of the metal support structure is 0.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: October 22, 2019
    Assignee: LG INNOTEK CO. LTD.
    Inventor: Myung Cheol Yoo
  • Patent number: 10453993
    Abstract: A method of manufacturing a light emitting device can include forming an n-type GaN-based layer on a sapphire substrate; forming a GaN-based active layer on the n-type GaN-based layer; forming a p-type GaN-based layer on the GaN-based active layer; forming a p-type electrode on the p-type GaN-based layer; forming a metal substrate on the p-type electrode; removing the sapphire substrate; forming an n-type electrode on the n-type GaN-based layer; forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode after the forming the n-type electrode; and forming an open space to expose the n-type electrode by patterning the passivation layer.
    Type: Grant
    Filed: April 17, 2019
    Date of Patent: October 22, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jong Lam Lee, In-kwon Jeong, Myung Cheol Yoo
  • Publication number: 20190312177
    Abstract: A method of manufacturing a light emitting device can include forming an n-type GaN-based layer on a sapphire substrate; forming a GaN-based active layer on the n-type GaN-based layer; forming a p-type GaN-based layer on the GaN-based active layer; forming a p-type electrode on the p-type GaN-based layer; forming a metal substrate on the p-type electrode; removing the sapphire substrate; forming an n-type electrode on the n-type GaN-based layer; forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode after the forming the n-type electrode; and forming an open space to expose the n-type electrode by patterning the passivation layer.
    Type: Application
    Filed: April 17, 2019
    Publication date: October 10, 2019
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Jong Lam LEE, ln-kwon JEONG, Myung Cheol YOO
  • Publication number: 20190267516
    Abstract: A light emitting device can include a light emitting structure including a p-GaN based semiconductor layer, an active layer having multiple quantum wells, and an n-GaN based semiconductor layer; a p-electrode and an n-electrode electrically connecting with the light emitting structure, respectively, wherein the n-electrode has a plurality of layers; a first passivation layer including a first portion contacting a portion of the n-electrode, a second portion vertically overlapped with the p-electrode, and a third portion that extends outside of outermost side surfaces of the light emitting structure; a phosphor layer disposed on a top surface of the light emitting structure; and a second passivation layer including a first portion disposed between the phosphor layer and the top surface of the light emitting structure, and a second portion disposed on the outermost side surfaces of the light emitting structure, in which the phosphor layer includes a pattern to bond a wire with a p-pad on a portion of the p-elec
    Type: Application
    Filed: May 7, 2019
    Publication date: August 29, 2019
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Myung Cheol YOO
  • Publication number: 20190229149
    Abstract: Monolithic pixels are implemented by laterally disposed green, blue and red micro-LED sub-pixels separated by dielectric sidewalls. The green and blue sub-pixels are formed with nitride-based material layers while the red sub-pixel is formed with non-nitride-based material layers that yield an optically-efficient red sub-pixel that is intensity-balanced with the green and blue sub-pixels.
    Type: Application
    Filed: January 23, 2019
    Publication date: July 25, 2019
    Inventor: Myung Cheol Yoo
  • Patent number: 10326055
    Abstract: A light emitting device includes a first conductive-type layer, an active layer, and a second conductive-type layer; a first electrode on a first surface of the first conductive-type layer, the first electrode having a multilayer structure including Pt; a first pad on the first electrode, the first pad disposed on an edge of the first surface of the first conductive-type layer in a cross-sectional view; and a second electrode and a second pad on a second surface of the second conductive-type layer, the second electrode having a metal layer including Ti. In addition, the first pad include Au, further the second electrode is unitary with the second pad, and also the second electrode includes a reflective layer configured to reflect light from the active layer.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: June 18, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Myung Cheol Yoo
  • Patent number: 10326059
    Abstract: A light emitting device can include a light emitting structure including a p-GaN based layer, an active layer having multiple quantum wells, and an n-GaN based layer; a p-electrode and an n-electrode electrically connecting with the light emitting structure, respectively, in which the n-electrode has a plurality of layers; a phosphor layer disposed on a top surface of the light emitting structure; and a passivation layer disposed between the phosphor layer and the top surface of the light emitting structure, and disposed on outermost side surfaces of the light emitting structure, in which the p-electrode and the n-electrode are disposed on opposite sides of the light emitting structure. Also, the phosphor layer has a two-digit micrometer thickness, and includes a pattern to bond an n-electrode pad on a portion of the n-electrode by a wire, and comprises different phosphor materials configured to emit light of different colors.
    Type: Grant
    Filed: June 26, 2017
    Date of Patent: June 18, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Myung Cheol Yoo
  • Publication number: 20190172974
    Abstract: A method for manufacturing a light emitting diode can include forming a GaN-based semiconductor structure with a thickness of less than 5 microns on a substrate, the GaN-based semiconductor structure having a p-type GaN-based semiconductor layer; an active layer on the p-type GaN-based semiconductor layer; and an n-type GaN-based semiconductor layer on the active layer; forming a p-type electrode having multiple metal layers on the GaN-based semiconductor structure; forming a metal support layer on the p-type electrode; removing the substrate from the GaN-based semiconductor structure to expose an upper surface of the GaN-based semiconductor structure; forming an n-type electrode on a flat portion produced by polishing the exposed upper surface of the GaN-based semiconductor structure, not only with overlapping at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure but also with contacting the flat portion; and forming an insulating layer on the upper surf
    Type: Application
    Filed: February 5, 2019
    Publication date: June 6, 2019
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Jong Lam LEE, ln-kwon JEONG, Myung Cheol YOO
  • Patent number: 10243101
    Abstract: A light emitting diode can include a metal support layer: a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer, the GaN-based semiconductor structure including a p-type GaN-based semiconductor layer, an active layer on the p-type GaN-based semiconductor layer, and an n-type GaN-based semiconductor layer on the active layer; a p-type electrode on the metal support layer and including a plurality of metal layers; an n-type electrode on a flat portion of an upper surface of the GaN-based semiconductor structure, and the n-type electrode contacts the flat portion; a metal pad layer on the n-type electrode; and an insulating layer including a first part disposed on the upper surface of the GaN-based semiconductor structure, and a second part disposed on an entire side surface of the GaN-based semiconductor structure, in which the metal pad layer includes a first portion having a flat bottom surface on the n-type electrode, and a second portion having stepped surface
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: March 26, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jong Lam Lee, In-kwon Jeong, Myung Cheol Yoo
  • Publication number: 20190058083
    Abstract: A light emitting device can include a substrate including first and second surfaces, the substrate having a thickness of less than 350 micrometers; a reflective layer on the second surface of the substrate; a light emitting structure on the first surface of the substrate and including first and second semiconductor layers with an active layer therebetween, the second semiconductor layer includes an aluminum-gallium-nitride layer, and the active layer includes aluminum and indium and has a multiple quantum well layer; a transparent conductive layer disposed on the second semiconductor layer and including an indium-tin-oxide; a first electrode on the first semiconductor layer and including multiple layers; a second electrode on the transparent conductive layer and including multiple layers; first and second pads on the first and second electrodes, respectively, in which the second pad includes the same material as the first pad and has a thickness of more than 500 nanometers.
    Type: Application
    Filed: October 22, 2018
    Publication date: February 21, 2019
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Myung Cheol YOO
  • Publication number: 20190051796
    Abstract: A light emitting device can include a metal support structure comprising Cu; an adhesion structure on the metal support structure; a reflective conductive contact on the adhesion structure; a GaN-based semiconductor structure on the reflective conductive contact, in which the GaN-based semiconductor structure includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure includes a bottom surface proximate to the metal support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, and a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers; an interface layer on the GaN-based semiconductor structure; and a contact pad on the interface layer, in which a second thickness of the metal support structure is 0.
    Type: Application
    Filed: October 16, 2018
    Publication date: February 14, 2019
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Myung Cheol YOO
  • Publication number: 20180366618
    Abstract: Residual internal stress within optoelectronic devices such as light-emitting diodes and laser diodes is reduced to improve internal quantum efficiency and thereby increase light output.
    Type: Application
    Filed: August 27, 2018
    Publication date: December 20, 2018
    Inventor: Myung Cheol Yoo
  • Patent number: 10147847
    Abstract: A light emitting device includes an adhesion structure on a metal support structure; a first metal layer on the adhesion structure; a second metal layer comprising Ti on the first metal layer; a GaN-based semiconductor structure on the second metal layer, which includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, a second-type semiconductor layer on the active layer, a bottom surface proximate to the metal support structure, a top surface, and a side surface, in which a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers; an interface layer comprising Ti; and a contact pad, in which the second metal layer directly contacts the GaN-based semiconductor structure, and a second thickness of the metal support structure is 0.5 times or less than a width of the top surface.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: December 4, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Myung Cheol Yoo
  • Patent number: 10147841
    Abstract: A light emitting device can include a substrate including first and second surfaces, the substrate having a thickness of less than 350 micrometers; a reflective layer on the second surface of the substrate; a light emitting structure on the first surface of the substrate and including first and second semiconductor layers with an active layer therebetween, the second semiconductor layer includes an aluminum-gallium-nitride layer, and the active layer includes aluminum and indium and has a multiple quantum well layer; a transparent conductive layer disposed on the second semiconductor layer and including an indium-tin-oxide; a first electrode on the first semiconductor layer and including multiple layers; a second electrode on the transparent conductive layer and including multiple layers; first and second pads on the first and second electrodes, respectively, in which the second pad includes the same material as the first pad and has a thickness of more than 500 nanometers.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: December 4, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Myung Cheol Yoo
  • Publication number: 20180331259
    Abstract: A light emitting device includes a first conductive-type layer, an active layer, and a second conductive-type layer; a first electrode on a first surface of the first conductive-type layer, the first electrode having a multilayer structure including Pt; a first pad on the first electrode, the first pad disposed on an edge of the first surface of the first conductive-type layer in a cross-sectional view; and a second electrode and a second pad on a second surface of the second conductive-type layer, the second electrode having a metal layer including Ti. In addition, the first pad include Au, further the second electrode is unitary with the second pad, and also the second electrode includes a reflective layer configured to reflect light from the active layer.
    Type: Application
    Filed: June 29, 2018
    Publication date: November 15, 2018
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Myung Cheol YOO
  • Patent number: 10032959
    Abstract: A light emitting device can include a GaN layer having a multilayer structure that can include an n-type layer, an active layer, and a p-type layer, the GaN layer having a first surface and a second surface; a conductive structure on the first surface of the GaN layer, the conductive structure includes a first electrode in contact with the first surface of the GaN layer, the first electrode is configured to reflect light from the active layer back through the second surface of the GaN layer; and a metal layer including Au, in which the metal layer serves as a first pad; a second electrode on the second surface of the GaN layer; and a second pad on the second electrode, in which a thickness of the second pad is about 0.5 ?m or higher.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: July 24, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Myung Cheol Yoo
  • Publication number: 20180158986
    Abstract: A light emitting diode can include a metal support layer: a GaN-based semiconductor structure having a less than 5 microns thickness on the metal support layer, the GaN-based semiconductor structure including a p-type GaN-based semiconductor layer, an active layer on the p-type GaN-based semiconductor layer, and an n-type GaN-based semiconductor layer on the active layer; a p-type electrode on the metal support layer and including a plurality of metal layers; an n-type electrode on a flat portion of an upper surface of the GaN-based semiconductor structure, and the n-type electrode contacts the flat portion; a metal pad layer on the n-type electrode; and an insulating layer including a first part disposed on the upper surface of the GaN-based semiconductor structure, and a second part disposed on an entire side surface of the GaN-based semiconductor structure, in which the metal pad layer includes a first portion having a flat bottom surface on the n-type electrode, and a second portion having stepped surface
    Type: Application
    Filed: December 4, 2017
    Publication date: June 7, 2018
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Jong Lam LEE, ln-kwon JEONG, Myung Cheol YOO
  • Publication number: 20180076356
    Abstract: A light emitting device includes an adhesion structure on a metal support structure; a first metal layer on the adhesion structure; a second metal layer comprising Ti on the first metal layer; a GaN-based semiconductor structure on the second metal layer, which includes a first-type semiconductor layer on the metal support structure, an active layer on the first-type semiconductor layer, a second-type semiconductor layer on the active layer, a bottom surface proximate to the metal support structure, a top surface, and a side surface, in which a first thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers; an interface layer comprising Ti; and a contact pad, in which the second metal layer directly contacts the GaN-based semiconductor structure, and a second thickness of the metal support structure is 0.5 times or less than a width of the top surface.
    Type: Application
    Filed: November 15, 2017
    Publication date: March 15, 2018
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Myung Cheol YOO
  • Patent number: 9882084
    Abstract: A vertical light emitting diode structure, comprising: a support structure including a support substrate and a metallic layer, the metallic layer being disposed on the support substrate; a GaN-based semiconductor structure including a first-type semiconductor layer on the support structure, an active layer on the first-type semiconductor layer, and a second-type semiconductor layer on the active layer, the GaN-based semiconductor structure including a bottom surface proximate to the support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface, a thickness of the GaN-based semiconductor structure from the bottom surface to the top surface being less than 5 micro meters, and a ratio of a thickness of the second-type semiconductor layer to the thickness of the GaN-based semiconductor structure being not less than 60%; a first contact layer disposed between the support structure and the GaN-based semiconductor structure to be electrically conne
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: January 30, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jong Lam Lee, In-kwon Jeong, Myung Cheol Yoo
  • Publication number: 20170365742
    Abstract: A light emitting device can include a GaN layer having a multilayer structure that can include an n-type layer, an active layer, and a p-type layer, the GaN layer having a first surface and a second surface; a conductive structure on the first surface of the GaN layer, the conductive structure includes a first electrode in contact with the first surface of the GaN layer, the first electrode is configured to reflect light from the active layer back through the second surface of the GaN layer; and a metal layer including Au, in which the metal layer serves as a first pad; a second electrode on the second surface of the GaN layer; and a second pad on the second electrode, in which a thickness of the second pad is about 0.5 ?m or higher.
    Type: Application
    Filed: March 6, 2017
    Publication date: December 21, 2017
    Applicant: LG INNOTEK CO., LTD
    Inventor: Myung Cheol Yoo