Abstract: A method of preparing a carbon fiber including: preparing a precursor fiber for preparing a carbon fiber; and stabilizing the precursor fiber. The stabilization of the precursor fiber includes a first stabilization phase, a second stabilization phase, a third stabilization phase, and a fourth stabilization phase, which are set at four different temperatures between a temperature at which heat starts to be generated from the stabilization reaction of the precursor fiber and a temperature at which the generation of heat is maximized. Ozone gas is input while at least one phase of the third stabilization phase and the fourth stabilization phase is carried out.

Abstract: An apparatus for manufacturing a display device includes a plurality of working tables, a plurality of arm modules, and a rotator. The plurality of working tables are spaced apart from each other in a first direction and are configured to support a target board. The plurality of arm modules are arranged in the first direction and spaced apart from the plurality of working tables in a second direction intersecting the first direction. The rotator is connected to the plurality of arm modules and configured to rotate about a rotation axis extending in the first direction.

Abstract: An integrated circuit (IC) device includes: a fin-type active area protruding from a substrate and extending in a first horizontal direction; a first nanosheet disposed above an upper surface of the fin-type active area with a first separation space therebetween; a second nanosheet disposed above the first nanosheet with a second separation space therebetween; a gate line extending on the substrate in a second horizontal direction intersecting the first horizontal direction, at least a portion of the gate line being disposed in the second separation space; and a bottom insulation structure disposed in the first separation space.

Abstract: A method for preparing a positive electrode active material, a positive electrode active material prepared using the same, and a lithium secondary battery, and in particular, to a method for preparing a positive electrode active material comprising the steps of (a) preparing a coating composition including a precursor of metal-phosphorous-oxynitride; (b) forming a precursor layer on a positive electrode active material with the coating composition of (a) using a solution process; and (c) forming a metal-phosphorous-oxynitride protective layer on the positive electrode active material by heat treating the positive electrode active material having the precursor layer formed thereon. The method for preparing a positive electrode active material uses a solution process, which is advantageous in terms of simplifying the whole process and reducing costs, and high capacity, high stabilization and long lifetime are obtained as well by the formed protective layer having excellent properties.

Abstract: A method for preparing a negative electrode active material, a negative electrode active material prepared using the same, and a lithium secondary battery, and in particular, to a method for preparing a negative electrode active material including the steps of (a) preparing a coating composition including a precursor of metal-phosphorus-oxynitride; (b) forming a precursor layer on a negative electrode active material with the coating composition of (a) using a solution process; and (c) forming a metal-phosphorus-oxynitride protective layer on the negative electrode active material by heat treating the negative electrode active material having the precursor layer formed thereon. The method for preparing a negative electrode active material uses a solution process, which is advantageous in terms of simplifying the whole process and reducing costs, and high capacity, high stabilization and long lifetime are obtained as well by the formed protective layer having excellent properties.

Abstract: The present invention relates to a radiation-resistant metal oxide semiconductor composition containing zinc-indium-tin oxide (ZITO) exhibiting radiation resistance, and a preparation method and use thereof. In the present invention, the radiation-resistant metal oxide semiconductor composition containing ZITO exhibiting radiation resistance is used in an electronic device for radiation exposure, which is used in outer space, nuclear power plants, or in spaces where medical or security devices are utilized by means of radiation, and thus, the damage caused by radiation can be prevented, thereby improving the electrical properties of the device (e.g., turn-on voltage (Von)), and the life-span and reliability thereof.

Abstract: A method for preparing a negative electrode active material, a negative electrode active material prepared using the same, and a lithium secondary battery, and in particular, to a method for preparing a negative electrode active material including the steps of (a) preparing a coating composition including a precursor of metal-phosphorous-oxynitride; (b) forming a precursor layer on a negative electrode active material with the coating composition of (a) using a solution process; and (c) forming a metal-phosphorous-oxynitride protective layer on the negative electrode active material by heat treating the negative electrode active material having the precursor layer formed thereon. The method for preparing a negative electrode active material uses a solution process, which is advantageous in terms of simplifying the whole process and reducing costs, and high capacity, high stabilization and long lifetime are obtained as well by the formed protective layer having excellent properties.

Abstract: A method for preparing a positive electrode active material, a positive electrode active material prepared using the same, and a lithium secondary battery, and in particular, to a method for preparing a positive electrode active material comprising the steps of (a) preparing a coating composition including a precursor of metal-phosphorous-oxynitride; (b) forming a precursor layer on a positive electrode active material with the coating composition of (a) using a solution process; and (c) forming a metal-phosphorous-oxynitride protective layer on the positive electrode active material by heat treating the positive electrode active material having the precursor layer formed thereon. The method for preparing a positive electrode active material uses a solution process, which is advantageous in terms of simplifying the whole process and reducing costs, and high capacity, high stabilization and long lifetime are obtained as well by the formed protective layer having excellent properties.

Abstract: A method for producing an ionic conductive film is disclosed. The method includes preparing a precursor solution, wherein the precursor solution contains a framework compound having a single bond or double bond between phosphorus (P) and nitrogen (N), a metal salt compound, and an organic solvent; preforming a solution process of the precursor solution in a non-vacuum condition to form a precursor film on a base; and preforming a heat-treating process of the precursor film to form a coated film containing metal-phosphorus-oxynitride.

Abstract: Disclosed are new methods of fabricating nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400° C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.

Abstract: Disclosed are new methods of fabricating nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400° C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.

Abstract: Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400° C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.

Abstract: Disclosed are new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400° C.). The present thin films are useful as thin film semiconductors, thin film dielectrics, or thin film conductors, and can be implemented into semiconductor devices such as thin film transistors and thin film photovoltaic devices.

Abstract: Various aspects of the present disclosure are directed toward carbon-based electrodes. The carbon-based electrodes include a composition of carbon-based structures treated with an oxide material. The composition is annealed, including application of heat in excess of 200 degrees Celsius, which causes the reduction of the oxide material by electron transfer from the carbon-based structures. Additionally, the annealing facilitates stabilization and conductivity of the electrode.