Abstract: The present invention relates to a composition for the diagnosis of a degenerative brain disease, comprising hpmA, which is a substance derived from Proteus, Shigella, Klebsiella pneumoniae, or Citrobacter, preferably a Proteus mirabilis strain, from a biological sample of a subject. In addition, the present invention relates to a method for providing information for the diagnosis of a degenerative brain disease such as Parkinson's disease, brain neuritis (neuroinflammation), or Alzheimer's disease, by measuring the amount of hpmA.

Abstract: A stent device including a stent coated with a photosensitizer, the stent including a pair of electrodes; and a circuit fixed to the stent, the circuit including a light emitting diode, a power receiving means for wirelessly receiving power from the outside, and converting the power to electric power; a second communicating means for receiving a control command from the outside; and a second control means for applying, based on the control command, the electric power to the electrodes causing an electric current to flow through the stent between the electrodes, the flow causing heating of the stent, and for controlling a temperature of the stent to provide hyperthermia therapy to a tumor, the second control means further for applying, based on the control command, the electric power to the light emitting diode to emit a predetermined wavelength of light to the photosensitizer to provide photodynamic therapy to the tumor.

Abstract: A manufacturing method of a sample collector for collection and transport of biological liquid samples, which includes a supporter, and a collecting part which is formed at an end portion of the supporter and to which fiber yarns are planted, includes the steps of: A) preparing two or more fiber yarns which are different from each other in at least one of length and width; and B) planting each of the fiber yarns to the collecting part based on a flocking method, wherein the step B) comprises the steps of: B1) mixing and putting the fiber yarns into a planting container so that the fiber yarns are distributed evenly; B2) inserting the collecting part into the planting container and applying adhesive onto the surface of the collecting part; and B3) planting the fiber yarns to the collecting part by electrostatic charge of each of the fiber yarns.

Abstract: The present invention relates to a stent using wirelessly transmitted power, and to an external driving device thereof. To this end, a stent is provided with: a power receiving part wirelessly receiving power from the outside; a power storing part storing the power; a second communicating part receiving a control command from the outside; an electrical stimulation part generating electrical stimulation by using the power; a photosensitizer coated onto a stent; an LED illuminating the vicinity of the stent; and a second control part controlling the heat-generating stent on the basis of the control command.

Abstract: A method for forming an isolation layer of a semiconductor device. The method includes: a) sequentially laminating a pad oxide layer and pad nitride layer on a semiconductor substrate; b) selectively removing the pad nitride layer, selectively removing the pad oxide layer and the substrate, thereby forming a trench in the substrate; c) implanting ions in a direction with a tilted angle into a side wall of the pad nitride layer located in an upper side of the trench; d) removing the side wall portion of the pad nitride layer in the trench, in which the ions are implanted, to form a sloped side wall of the pad nitride layer, wherein the sloped side wall is inclined in an inverse direction; e) filling a HDP oxid layer in an upper surface of an entire structure including the trench; f) planarizing the HDP oxide layer and the pad nitride layer; and g) removing a remaining pad nitride layer, thereby forming an isolation layer.

Abstract: A method for forming an isolation layer of a semiconductor device is disclosed, which comprises the steps of: a) sequentially laminating a pad oxide layer and a pad nitride layer on a semiconductor substrate; b) selectively removing the pad nitride layer, selectively removing the pad oxide layer and the semiconductor substrate, thereby forming a trench in the semiconductor substrate; c) implanting ions in a direction with a tilted angle into a side wall of the pad nitride layer located in an upper side of the trench; d) removing the side wall portion of the pad nitride layer in the upper side of the trench, in which the ions are implanted, and the pad nitride layer portion under the side wall portion in which the ions are implanted, thereby forming a side wall of the pad nitride layer inclined in an inverse direction; e) filling a HDP oxide layer in an upper surface of an entire structure including the trench; f) planarizing the HDP oxide layer and the pad nitride layer; and g) removing a remaining pad nitrid

Abstract: The present invention relates to a method of manufacturing a semiconductor device. When a trench of a STI structure is formed, a portion of a pad nitride film on an active region is removed . Thus, formation of a moat around an upper corner portion of the trench of the STI structure is prevented. Also, the upper corner portion of the trench is rounded. Therefore, a parasitic effect, degradation in gate oxide integrity, an inverse narrow effect and a sub-threshold hump phenomenon can be prevented. Further, a breakdown phenomenon, a gate bridge phenomenon and difference in the coupling ratio between gate electrodes can be prevented.

Abstract: The present invention relates to a method of manufacturing a semiconductor device. When a trench of a STI structure is formed, a portion of a pad nitride film on an active region is removed . Thus, formation of a moat around an upper corner portion of the trench of the STI structure is prevented. Also, the upper comer portion of the trench is rounded. Therefore, a parasitic effect, degradation in gate oxide integrity, an inverse narrow effect and a sub-threshold hump phenomenon can be prevented. Further, a breakdown phenomenon, a gate bridge phenomenon and difference in the coupling ratio between gate electrodes can be prevented.