Patents by Inventor Myung-Gyu Kang

Myung-Gyu Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Cold field electron emitters based on silicon carbide structures
    Patent number: 9558907
    Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/?m is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
    Type: Grant
    Filed: January 7, 2016
    Date of Patent: January 31, 2017
    Assignees: THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, UNIVERSITY OF MARYLAND
    Inventors: Fred Sharifi, Henry Lezec, Myung-Gyu Kang
  • COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES
    Publication number: 20160118214
    Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/?m is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
    Type: Application
    Filed: January 7, 2016
    Publication date: April 28, 2016
    Applicants: THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, UNIVERSITY OF MARYLAND
    Inventors: Fred Sharifi, Henry Lezec, Myung-Gyu Kang
  • Cold field electron emitters based on silicon carbide structures
    Patent number: 9324534
    Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/?m is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
    Type: Grant
    Filed: October 20, 2014
    Date of Patent: April 26, 2016
    Assignee: THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
    Inventors: Fred Sharifi, Myung-Gyu Kang, Henri Lezec
  • COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES
    Publication number: 20150061487
    Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/?m is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
    Type: Application
    Filed: October 20, 2014
    Publication date: March 5, 2015
    Inventors: Fred Sharifi, MYUNG-GYU KANG, HENRI LEZEC
  • Cold field electron emitters based on silicon carbide structures
    Patent number: 8907553
    Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/?m is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: December 9, 2014
    Assignee: The United States of America as represented by the Secretary of Commerce, The National Institute of Standards and Technology
    Inventors: Fred Sharifi, Myung-Gyu Kang, Henri Lezec
  • COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES
    Publication number: 20130187532
    Abstract: A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/?m is demonstrated in a macroscopic emitter array. The emitter is comprised of a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
    Type: Application
    Filed: August 8, 2012
    Publication date: July 25, 2013
    Applicant: THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY
    Inventors: Fred Sharifi, Myung-Gyu Kang, Henri Lezec