Abstract: A memory module includes a plurality of buses. A plurality of memory chips is mounted on a module board and is connected to a first node, a second node, and a plurality of third nodes of the plurality of buses. The first node, the second node, and the third nodes branch off to a first memory chip, a second memory chip, and the third memory chips, respectively. A length of the plurality of buses between the first and second nodes is longer than a length of the plurality of buses between adjacent nodes from among the second node and the third nodes.

Abstract: A semiconductor memory device, a semiconductor memory module, and a semiconductor memory system including the same, the semiconductor memory device including a command/address input buffer that receives a command/address signal and a command/address reference voltage signal, wherein the command/address input buffer is configured to amplify a difference between the command/address signal and the command/address reference voltage signal, and is further configured to output the amplified difference between the command/address signal and the command/address reference voltage signal, and a chip selection input buffer that receives a chip selection signal and a chip selection reference voltage signal, wherein the chip selection input buffer is configured to amplify a difference between the chip selection signal and the chip selection reference voltage signal, and is further configured to output the amplified difference between the chip selection signal and the chip selection reference voltage signal, wherein a volt

Abstract: A circuit board assembly includes a first circuit board having an electrical connection circuit on a surface thereof. A second circuit board is on the surface of the first circuit board. A first memory socket is mounted on the second circuit board. The first memory socket is only electrically connected to the electrical connection circuit through the second circuit board. A second memory socket is mounted on the second circuit board. The second memory socket that is only electrically connected to the electrical connection circuit through the second circuit board.

Abstract: A memory system includes; a main board having memory bus with a wiring line communicating a signal from a memory controller mounted on the main board, first and second module sockets mounted on the main board and connecting the wiring line to first and second memory modules respectively inserted into the first and second module sockets, where the first memory module includes a first electrode connected to the wiring line and the second memory module includes a second electrode connected to the wiring line, and first and second stub resistors disposed on the main board and arranged as primary dual-branching stub resistors forming a T-branch connection structure between the first and second electrodes and a branching node connected to the wiring line.

Abstract: A semiconductor memory device, a semiconductor memory module, and a semiconductor memory system including the same, the semiconductor memory device including a command/address input buffer that receives a command/address signal and a command/address reference voltage signal, wherein the command/address input buffer is configured to amplify a difference between the command/address signal and the command/address reference voltage signal, and is further configured to output the amplified difference between the command/address signal and the command/address reference voltage signal, and a chip selection input buffer that receives a chip selection signal and a chip selection reference voltage signal, wherein the chip selection input buffer is configured to amplify a difference between the chip selection signal and the chip selection reference voltage signal, and is further configured to output the amplified difference between the chip selection signal and the chip selection reference voltage signal, wherein a volt

Abstract: A multi-mode electrostatic discharge (ESD) circuit for a semiconductor chip comprises first and second ESD diodes. In a first mode, a body voltage greater than a power source voltage of the semiconductor chip is applied to the first ESD diode and a body voltage less than a ground voltage of the semiconductor chip is applied to the second ESD diode. In a second mode, a body voltage substantially equal to the power source voltage of the semiconductor chip is applied to the body of the first ESD diode and a body voltage substantially equal to the ground voltage of the semiconductor chip is applied to the second ESD diode.

Abstract: A memory system includes; a main board having memory bus with a wiring line communicating a signal from a memory controller mounted on the main board, first and second module sockets mounted on the main board and connecting the wiring line to first and second memory modules respectively inserted into the first and second module sockets, where the first memory module includes a first electrode connected to the wiring line and the second memory module includes a second electrode connected to the wiring line, and first and second stub resistors disposed on the main board and arranged as primary dual-branching stub resistors forming a T-branch connection structure between the first and second electrodes and a branching node connected to the wiring line.

Abstract: A memory system includes a memory controller, a transmission bus, a power divider, a first memory chip, and a second memory chip. The transmission bus is coupled from the memory controller to a first node of the power divider for transferring signals. The first node of the power divider is coupled to a second node of the power divider via a first line, and the first node is also coupled to a third node of the power divider via a second line. The first memory chip is coupled to the second node via a first branch bus and the second memory chip is coupled to the third node via a second branch bus. Accordingly, reflected wave due to an impedance mismatching can be reduced to enhance the signal integrity.

Abstract: A multi-mode electrostatic discharge (ESD) circuit for a semiconductor chip comprises first and second ESD diodes. In a first mode, a body voltage greater than a power source voltage of the semiconductor chip is applied to the first ESD diode and a body voltage less than a ground voltage of the semiconductor chip is applied to the second ESD diode. In a second mode, a body voltage substantially equal to the power source voltage of the semiconductor chip is applied to the body of the first ESD diode and a body voltage substantially equal to the ground voltage of the semiconductor chip is applied to the second ESD diode.

Abstract: A memory system includes a memory controller, a transmission bus, a power divider, a first memory chip, and a second memory chip. The transmission bus is coupled from the memory controller to a first node of the power divider for transferring signals. The first node of the power divider is coupled to a second node of the power divider via a first line, and the first node is also coupled to a third node of the power divider via a second line. The first memory chip is coupled to the second node via a first branch bus and the second memory chip is coupled to the third node via a second branch bus. Accordingly, reflected wave due to an impedance mismatching can be reduced to enhance the signal integrity.