Patents by Inventor Myung-Hoon Jung
Myung-Hoon Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240132357Abstract: An embodiment of the present specification provides a method for preparing a catalyst for preparing a carbon nanotube, comprising: (a) dissolving a main catalyst precursor, a support precursor, a cocatalyst precursor and a precipitation inhibitor in a solvent to prepare a precursor solution; and (b) pyrolyzing the precursor solution by spraying the precursor solution into a reactor, wherein a mole fraction of the precipitation inhibitor to the cocatalyst precursor is 0.1 to 1.5.Type: ApplicationFiled: October 19, 2023Publication date: April 25, 2024Applicant: KOREA KUMHO PETROCHEMICAL CO., LTD.Inventors: Myung Hoon JEONG, Hyun Tae KIM, Sang Hyo RYU, Chung Heon JEONG, Wan Sung LEE, Woo Ram JUNG, Chang Gu KANG
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Publication number: 20240123548Abstract: Embodiments relate to laser welding methods, monitoring methods, and monitoring systems for a secondary battery. A laser welding method for a secondary battery includes performing laser welding on a positive electrode base having a thin-film shape in which a plurality of positive electrode base tabs are formed at a side, a negative electrode base having a thin-film shape in which a plurality of negative electrode base tabs are formed at a side, and a thin-film multi-tab to be joined to each of the positive electrode base and the negative electrode base, a welded portion in which the multi-tab is welded with the positive electrode base and the negative electrode base being melting-joined by using a laser such that a plurality of welding spots is formed on the welded portion.Type: ApplicationFiled: December 22, 2023Publication date: April 18, 2024Inventors: Jae Hoon ROH, Sang Hyun RYU, Myung Jun PARK, Seong Bae AN, Yong Gyu AN, Hee Dong JUNG, Jin Gyu HEO
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Patent number: 11957495Abstract: An X-ray imaging apparatus includes an imaging device configured to capture a camera image of a target; a controller configured to stitch a plurality of X-ray images of respective divided regions of the target to generate one X-ray image of the target; and a display configured to display a settings window that provides a GUI for receiving a setting of an X-ray irradiation condition for the respective divided regions, and display the camera image in which positions of the respective divided regions are displayed.Type: GrantFiled: December 15, 2021Date of Patent: April 16, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Ho Jun Lee, Ju Hwan Kim, Se Hui Kim, Seung-Hoon Kim, Si Won Park, Phill Gu Jung, Duhgoon Lee, Myung Jin Chung, Do Hyeong Hwang, Sung Jin Park
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Patent number: 11961413Abstract: The present invention relates to a method, system and non-transitory computer-readable recording medium for assisting listening study. According to one aspect of the invention, there is provided a method for assisting listening study, comprising the steps of: determining a plurality of weak study sentences that a user who is provided with assessment study sentences by speech fails to understand, with reference to feedback from the user; determining at least some of pronunciations or pronunciation combinations commonly included in the plurality of weak study sentences as weak pronunciations or pronunciation combinations that the user fails to understand; and determining a compensatory study course to be provided to the user, with reference to the determined weak pronunciations or pronunciation combinations.Type: GrantFiled: October 23, 2019Date of Patent: April 16, 2024Assignee: VITRUV INC.Inventors: Se Hoon Gihm, Myung Hoon Ahn, Tae Hyoung Oh, Du Seop Jung
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Patent number: 10056375Abstract: A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern having a first height and the second gate pattern having a second height, an insulating pattern on the substrate covering the first and second gate patterns, the insulating pattern including a trench exposing the substrate between the first and second gate patterns, a spacer contacting at least a portion of a sidewall of the insulating pattern within the trench, the spacer spaced apart from the first and second gate patterns and having a third height larger than the first and second heights, and a contact structure filling the trench.Type: GrantFiled: August 28, 2017Date of Patent: August 21, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Doo-Young Lee, Sang-Hyun Lee, Myung-Hoon Jung, Do-Hyoung Kim
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Patent number: 9935238Abstract: An embodiment relates to a light-emitting element, a method for producing same, a light-emitting element package, and a lighting system.Type: GrantFiled: April 7, 2015Date of Patent: April 3, 2018Assignee: LG INNOTEK CO., LTD.Inventors: Ki Young Song, Hyun Chul Lim, Myung Hoon Jung
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Publication number: 20170358573Abstract: A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern having a first height and the second gate pattern having a second height, an insulating pattern on the substrate covering the first and second gate patterns, the insulating pattern including a trench exposing the substrate between the first and second gate patterns, a spacer contacting at least a portion of a sidewall of the insulating pattern within the trench, the spacer spaced apart from the first and second gate patterns and having a third height larger than the first and second heights, and a contact structure filling the trench.Type: ApplicationFiled: August 28, 2017Publication date: December 14, 2017Applicant: Samsung Electronics Co., Ltd.Inventors: Doo-Young LEE, Sang-Hyun LEE, Myung-Hoon JUNG, Do-Hyoung KIM
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Patent number: 9768163Abstract: A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern having a first height and the second gate pattern having a second height, an insulating pattern on the substrate covering the first and second gate patterns, the insulating pattern including a trench exposing the substrate between the first and second gate patterns, a spacer contacting at least a portion of a sidewall of the insulating pattern within the trench, the spacer spaced apart from the first and second gate patterns and having a third height larger than the first and second heights, and a contact structure filling the trench.Type: GrantFiled: June 19, 2015Date of Patent: September 19, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Doo-Young Lee, Sang-Hyun Lee, Myung-Hoon Jung, Do-Hyoung Kim
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Publication number: 20170025566Abstract: An embodiment relates to a light-emitting element, a method for producing same, a light-emitting element package, and a lighting system.Type: ApplicationFiled: April 7, 2015Publication date: January 26, 2017Applicant: LG INNOTEK CO., LTD.Inventors: Ki Young SONG, Hyun Chul LIM, Myung Hoon JUNG
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Patent number: 9520535Abstract: A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a second semiconductor layer disposed on the first semiconductor layer and including the first conductive dopant having a doping concentration lower than a doping concentration of the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer to adjust stress, a first conductive semiconductor layer on the third semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer; and a second electrode on the second conductive semiconductor layer, the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conductiType: GrantFiled: August 19, 2015Date of Patent: December 13, 2016Assignee: LG INNOTEK., LTD.Inventors: Chan Keun Park, Hyeong Jun Kim, Myung Hoon Jung, Jae Woong Han
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Patent number: 9484458Abstract: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.Type: GrantFiled: January 22, 2015Date of Patent: November 1, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin-Wook Lee, Myeong-Cheol Kim, Sang-Min Lee, Young-Ju Park, Hyung-Yong Kim, Myung-Hoon Jung
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Patent number: 9362451Abstract: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.Type: GrantFiled: January 12, 2015Date of Patent: June 7, 2016Assignee: LG INNOTEK CO., LTD.Inventors: Myung Hoon Jung, Hyun Chul Lim, Sul Hee Kim, Rak Jun Choi
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Publication number: 20160111506Abstract: A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern having a first height and the second gate pattern having a second height, an insulating pattern on the substrate covering the first and second gate patterns, the insulating pattern including a trench exposing the substrate between the first and second gate patterns, a spacer contacting at least a portion of a sidewall of the insulating pattern within the trench, the spacer spaced apart from the first and second gate patterns and having a third height larger than the first and second heights, and a contact structure filling the trench.Type: ApplicationFiled: June 19, 2015Publication date: April 21, 2016Inventors: Doo-Young LEE, Sang-Hyun LEE, Myung-Hoon JUNG, Do-Hyoung KIM
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Patent number: 9312478Abstract: Magnetic devices, and methods of manufacturing the same, include a stack structure including at least one magnetic layer, etched using an etching gas including at least 70 volume percent of a hydrogen-containing gas and at least 2 volume percent of CO gas.Type: GrantFiled: August 20, 2012Date of Patent: April 12, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Hak-sun Lee, Tokashiki Ken, Myeong-cheol Kim, Hyung-joon Kwon, Sang-min Lee, Woo-cheol Lee, Myung-hoon Jung
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Patent number: 9305801Abstract: A method of forming a semiconductor device can be provided by forming a mask pattern including non-metallic first spaced-apart portions that extend in a first direction on a lower target layer and non-metallic second spaced-apart portions that extend in a second direction on the lower target layer to cross-over the non-metallic first spaced-apart portions at locations. The lower target layer can be etched using the mask pattern.Type: GrantFiled: March 7, 2013Date of Patent: April 5, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Sughyun Sung, Myeongcheol Kim, Myung-Hoon Jung
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Publication number: 20160056338Abstract: A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a second semiconductor layer disposed on the first semiconductor layer and including the first conductive dopant having a doping concentration lower than a doping concentration of the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer to adjust stress, a first conductive semiconductor layer on the third semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer; and a second electrode on the second conductive semiconductor layer, the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conductiType: ApplicationFiled: August 19, 2015Publication date: February 25, 2016Applicant: LG INNOTEK CO., LTD.Inventors: Chan Keun PARK, Hyeong Jun KIM, Myung Hoon JUNG, Jae Woong HAN
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Patent number: 9190571Abstract: A light emitting device includes a first semiconductor layer having a first conductive dopant, an active layer on the first semiconductor layer, an electron blocking layer on the active layer, a carrier injection layer between the active layer and the electron blocking layer, and a second semiconductor layer having a second conductive dopant on the electron blocking layer. The carrier injection layer includes the first conductive dopant and the second conductive dopant, and the first conductive dopant of the carrier injection layer has a concentration lower than a concentration of the second conductive dopant.Type: GrantFiled: October 18, 2013Date of Patent: November 17, 2015Assignee: LG Innotek Co., Ltd.Inventors: Eun Sil Choi, Jeong Tak Oh, Myung Hoon Jung, Ki Young Song
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Publication number: 20150155436Abstract: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.Type: ApplicationFiled: January 12, 2015Publication date: June 4, 2015Inventors: Myung Hoon JUNG, Hyun Chul Lim, Sul Hee Kim, Rak Jun CHOI
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Publication number: 20150137261Abstract: A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.Type: ApplicationFiled: January 22, 2015Publication date: May 21, 2015Inventors: Jin-Wook LEE, Myeong-Cheol KIM, Sang-Min LEE, Young-Ju PARK, Hyung-Yong KIM, Myung-Hoon JUNG
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Patent number: 8952400Abstract: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.Type: GrantFiled: December 14, 2011Date of Patent: February 10, 2015Assignee: LG Innotek Co., Ltd.Inventors: Myung Hoon Jung, Hyun chul Lim, Sul Hee Kim, Rak Jun Choi