Patents by Inventor Myung Hwan Byun

Myung Hwan Byun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for separating nanogenerator and method for manufacturing nanogenerator using the same
    Patent number: 10166400
    Abstract: Provided is a method for separating a nanogenerator, which includes laminating a buffer layer on a sacrificial substrate, making a nanogenerator on the buffer layer, laminating a metal layer on the nanogenerator and separating the nanogenerator from the buffer layer. Here, a nanogenerator is separated by using a stress difference between the sacrificial substrate and the metal layer, instead of an existing method in which a nanogenerator is separated from the sacrificial substrate by means of wet etching or the like. In particular, according to a difference between a tensile stress at the metal layer such as nickel and a compressive stress at the lower silicon substrate, the nanogenerator is intactly separated from the silicon oxide layer serving as a buffer layer. Therefore, the nanogenerator may be separated from the sacrificial substrate in a mechanical way, which is safer and more economic in comparison to an existing chemical separation method using an etching solution.
    Type: Grant
    Filed: November 11, 2014
    Date of Patent: January 1, 2019
    Assignee: Korea Advanced Institute of Science and Technology
    Inventors: Keon Jae Lee, Myung Hwan Byun, Kwi Il Park, Geon Tae Hwang, Chang Kyu Chung
  • METHOD FOR SEPARATING NANOGENERATOR AND METHOD FOR MANUFACTURING NANOGENERATOR USING THE SAME
    Publication number: 20150224324
    Abstract: Provided is a method for separating a nanogenerator, which includes laminating a buffer layer on a sacrificial substrate, making a nanogenerator on the buffer layer, laminating a metal layer on the nanogenerator and separating the nanogenerator from the buffer layer. Here, a nanogenerator is separated by using a stress difference between the sacrificial substrate and the metal layer, instead of an existing method in which a nanogenerator is separated from the sacrificial substrate by means of wet etching or the like. In particular, according to a difference between a tensile stress at the metal layer such as nickel and a compressive stress at the lower silicon substrate, the nanogenerator is intactly separated from the silicon oxide layer serving as a buffer layer. Therefore, the nanogenerator may be separated from the sacrificial substrate in a mechanical way, which is safer and more economic in comparison to an existing chemical separation method using an etching solution.
    Type: Application
    Filed: November 11, 2014
    Publication date: August 13, 2015
    Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Keon Jae LEE, Myung Hwan Byun, Kwi II Park, Geon Tae Hwang, Chang Kyu Chung