Abstract: A storage device includes a first physical space including first nonvolatile memory devices, a second physical space including second nonvolatile memory devices physically isolated from the first nonvolatile memory devices, and a storage controller that fetches a command from an external device and performs an operation corresponding to the command in any one of the first and second physical spaces, based on information included in the fetched command.

Abstract: An exemplary embodiment of the present invention provides a multilayer marking film including: an adhesive layer; a colored base layer having a first color; and a colored coating layer having a second color, in which the first color and the second color are different from each other, the colored coating layer, the colored base layer, and the adhesive layer are sequentially provided, the colored base layer includes a cured material of a base composition including: a urethane (meth)acrylate oligomer; a (meth)acrylate monomer including one or more selected from the group consisting of a cyclo-aliphatic (meth)acrylate monomer, an epoxy-based (meth)acrylate monomer, an aliphatic (meth)acrylate monomer, and a polyol-based (meth)acrylate monomer; and a pigment, and the colored coating layer is etched by laser irradiation.

Abstract: A data storage device which exchanges multi-stream data with a host includes a nonvolatile memory device; a buffer memory configured to temporarily store data to be stored in the nonvolatile memory device or data read from the nonvolatile memory device; and a storage controller configured to receive from the host an access command for accessing segments of the multi-stream data, the accessing including reading the segments of the multi-stream data from or writing the segments of the multi-stream data to the nonvolatile memory device, wherein the storage controller is configured to store the access-requested segments in the buffer memory, the access-requested segments being the segments of data for which access is requested in the access command, the multi-stream data including a plurality of data streams that correspond respectively to a plurality of multi-stream indexes, the first multi-stream index being one of a plurality of multi-stream indexes.

Abstract: A nonvolatile memory system includes a nonvolatile memory; a buffer memory having first and second buffers; and a memory controller configured to manage the first and second buffers based on first and second indexes and to control the nonvolatile memory in response to a write request provided from an external device. The memory controller allocates a part of the first buffer to a Direct Memory Access (hereinafter, referred to as DMA) buffer in response to the write request, stores write data received from the external device in the allocated DMA buffer based on a DMA operation, partially swaps the first and second indexes to shift the write data stored in the allocated DMA buffer to the second buffer, and transmits the write data shifted to the second buffer to the nonvolatile memory.

Abstract: Disclosed are a photothermal conversion film having good photothermal conversion effects and also good visible light penetrability, and a transfer film for an OLED using same. The photothermal conversion film according to the present invention comprises a base film and a photothermal conversion layer formed on the base film, wherein the photothermal conversion layer includes a tungsten oxide-based material and has visible light penetrability of 20% or greater.

Abstract: An operating method for a storage device includes; in response to a first read command a memory controller reads first data from a nonvolatile memory and provides it to a host. The memory controller also anticipates a first prefetch address, reads first prefetch data from the nonvolatile memory in response to the first prefetch address and stores the first prefetch data in a memory. Upon receiving a second read command from the host, the memory controller determines whether the first prefetch data corresponds with second data stored in the nonvolatile memory as identified by the second address, and provides the first prefetched data from the memory to the host if it does. Thereafter, the first prefetch data stored in the memory is marked as trash data.

Abstract: A method of managing power of the storage device including a first processing core for controlling a first function block and a second processing core for controlling a second function block includes: analyzing a pattern of commands received from the outside; selecting an operation mode of the storage device based on the analyzed pattern; and managing the electric power of the storage device by using the first processing core if the selected operation mode is a first mode, and separately managing electric powers of the first and second function blocks by using the first and second processing cores, respectively, if the selected operation mode is a second mode.

Abstract: A storage device includes; a nonvolatile memory, a command division unit that divides a received command into unit commands and distributes the multiple unit commands across multiple processing units. Respective data processing preparation units receive different unit commands and generate corresponding DMA requests. The multiple processing units are operationally associated with DMA request queues, and the nonvolatile memory executes a first data access operation in response to the first DMA requests, and a second data access operation in response to the second DMA requests.

Abstract: Disclosed are a photothermal conversion film having good photothermal conversion effects and also good visible light penetrability, and a transfer film for an OLED using same. The photothermal conversion film according to the present invention comprises a base film and a photothermal conversion layer formed on the base film, wherein the photothermal conversion layer includes a tungsten oxide-based material and has visible light penetrability of 20% or greater.

Abstract: A nonvolatile memory system includes a nonvolatile memory; a buffer memory having first and second buffers; and a memory controller configured to manage the first and second buffers based on first and second indexes and to control the nonvolatile memory in response to a write request provided from an external device. The memory controller allocates a part of the first buffer to a Direct Memory Access (hereinafter, referred to as DMA) buffer in response to the write request, stores write data received from the external device in the allocated DMA buffer based on a DMA operation, partially swaps the first and second indexes to shift the write data stored in the allocated DMA buffer to the second buffer, and transmits the write data shifted to the second buffer to the nonvolatile memory.

Abstract: A method of manipulating data includes receiving a data manipulation command for corresponding data, which corresponds to a first logical block address, to a second logical block address. The method further includes mapping the second logical block address to a physical block address, which is mapped to the first logical block address, in response to the data manipulation command. A system for manipulating data includes a host and a flash translation layer. The host transmits a data manipulation command for corresponding data, which corresponds to a first logical block address, to a second logical block address. The flash translation layer maps the second logical block address to a physical block address, which is mapped to the first logical block address, in response to the data manipulation command.

Abstract: A data storage device which exchanges multi-stream data with a host includes a nonvolatile memory device; a buffer memory configured to temporarily store data to be stored in the nonvolatile memory device or data read from the nonvolatile memory device; and a storage controller configured to receive from the host an access command for accessing segments of the multi-stream data, the accessing including reading the segments of the multi-stream data from or writing the segments of the multi-stream data to the nonvolatile memory device, wherein the storage controller is configured to store the access-requested segments in the buffer memory, the access-requested segments being the segments of data for which access is requested in the access command, the multi-stream data including a plurality of data streams that correspond respectively to a plurality of multi-stream indexes, the first multi-stream index being one of a plurality of multi-stream indexes.

Abstract: A method of manipulating data includes receiving a data manipulation command for corresponding data, which corresponds to a first logical block address, to a second logical block address. The method further includes mapping the second logical block address to a physical block address, which is mapped to the first logical block address, in response to the data manipulation command. A system for manipulating data includes a host and a flash translation layer. The host transmits a data manipulation command for corresponding data, which corresponds to a first logical block address, to a second logical block address. The flash translation layer maps the second logical block address to a physical block address, which is mapped to the first logical block address, in response to the data manipulation command.

Abstract: A data storage device and a data storing method thereof, including first main memories coupled to a plurality of channels, second main memories coupled to the plurality of channels in common, a buffer memory temporarily storing data to be programmed to the first and the second main memories; and a controller configured to program data of victim cache lines from the buffer memory to the second main memories while data of a first victim cache line from the buffer memory is being programmed to the first main memories. The storing method includes that a victim cache line is selected based on cost-based page replacement.

Abstract: A memory system includes a host including a configuration controller to receive an input command and to output a configuration command corresponding to the input command, and a storage to be driven by firmware including a plurality of features, the storage including an adaptation controller to receive the configuration command from the configuration controller and to determine whether to enable each of the features.

Abstract: A method of manipulating data includes receiving a data manipulation command for corresponding data, which corresponds to a first logical block address, to a second logical block address. The method further includes mapping the second logical block address to a physical block address, which is mapped to the first logical block address, in response to the data manipulation command. A system for manipulating data includes a host and a flash translation layer. The host transmits a data manipulation command for corresponding data, which corresponds to a first logical block address, to a second logical block address. The flash translation layer maps the second logical block address to a physical block address, which is mapped to the first logical block address, in response to the data manipulation command.

Abstract: A data storage device comprises a plurality of memory devices and a memory controller. The memory controller exchanges data with the memory devices via a plurality of channels. The memory controller decodes an external command to generate a driving power mode and accesses the memory devices according to the driving power mode.

Abstract: A method of managing power of the storage device including a first processing core for controlling a first function block and a second processing core for controlling a second function block includes: analyzing a pattern of commands received from the outside; selecting an operation mode of the storage device based on the analyzed pattern; and managing the electric power of the storage device by using the first processing core if the selected operation mode is a first mode, and separately managing electric powers of the first and second function blocks by using the first and second processing cores, respectively, if the selected operation mode is a second mode.

Abstract: A storage device, such as a hard disk drive or solid state drive, reduces energy consumption by entering a reduced power state after an inactivity time where the inactivity time is set based upon I/O commands received at the storage device. For example, where commands received at a storage device are characterized in a predetermined way in terms of read commands, such as a last received command as a read command or a ratio of read commands versus write commands, a first inactivity time is applied, while commands characterized in a predetermined way in terms of write commands have a second inactivity time applied. Using a greater inactivity time during read activities than during write activities provides improved performance with reduced power consumption.

Abstract: A storage device, such as a hard disk drive or solid state drive, reduces energy consumption by entering a reduced power state after an inactivity time where the inactivity time is set based upon I/O commands received at the storage device. For example, where commands received at a storage device are characterized in a predetermined way in terms of read commands, such as a last received command as a read command or a ratio of read commands versus write commands, a first inactivity time is applied, while commands characterized in a predetermined way in terms of write commands have a second inactivity time applied. Using a greater inactivity time during read activities than during write activities provides improved performance with reduced power consumption.