Abstract: Embodiments relate to laser welding methods, monitoring methods, and monitoring systems for a secondary battery. A laser welding method for a secondary battery includes performing laser welding on a positive electrode base having a thin-film shape in which a plurality of positive electrode base tabs are formed at a side, a negative electrode base having a thin-film shape in which a plurality of negative electrode base tabs are formed at a side, and a thin-film multi-tab to be joined to each of the positive electrode base and the negative electrode base, a welded portion in which the multi-tab is welded with the positive electrode base and the negative electrode base being melting-joined by using a laser such that a plurality of welding spots is formed on the welded portion.

Abstract: An apparatus for manufacturing a secondary battery includes: an index table configured to receive a secondary battery cell, the secondary battery cell including an electrode assembly, a can accommodating the electrode assembly, and an electrode tab between the electrode assembly and the can to electrically connect the electrode assembly to the can; a laser scanner configured to irradiate laser onto an outer surface of the can to weld the electrode tab to the can; and a controller configured to variably control the laser scanner according to an operation of the index table.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A capacitor component includes a body including dielectric layers, first and second internal electrodes, laminated in a first direction, facing each other, and first and second cover portions, disposed on outermost portions of the first and second internal electrodes, and first and second external electrodes, respectively disposed on both external surfaces of the body in a second direction, perpendicular to the first direction, and respectively connected to the first and second internal electrodes. An indentation including a glass is disposed at at least one of boundaries between the first internal electrodes and the first external electrode or one of boundaries between the second internal electrodes and the second external electrode.

Abstract: An image encoding/decoding method is provided. An image decoding method of the present invention may comprise deriving an intra-prediction mode of a current luma block, deriving an intra-prediction mode of a current chroma block based on the intra-prediction mode of the current luma block, generating a prediction block of the current chroma block based on the intra-prediction mode of the current chroma block, and the deriving of an intra-prediction mode of a current chroma block may comprise determining whether or not CCLM (Cross-Component Linear Mode) can be performed for the current chroma block.

Abstract: Devices and methods related to film bulk acoustic resonators. In some embodiments, a film bulk acoustic resonator can be manufactured by a method that includes forming a first electrode having a first lateral shape and providing a piezoelectric layer on the first electrode. The method can further include forming a second electrode having a second lateral shape on the piezoelectric layer such that the piezoelectric layer is between the first and second electrodes. The forming of the first electrode and the forming of the second electrode can include selecting and arranging the first and second lateral shapes to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, such that the resonator shape includes N curved sections joined by N vertices of an N-sided polygon, and such that the resonator shape has no axis of symmetry.

Abstract: An acoustic sensor (e.g., for use in a piezoelectric MEMS microphone) includes a substrate and a cantilever beam attached to the substrate. The cantilever beam has a proximal portion attached to the substrate and a distal portion that extends from the proximal portion to a free end of the beam, the beam extending generally linearly from the proximal portion toward the free end in a first direction. The beam has a wall portion at or proximate the free end that extends in a second direction generally transverse to the first direction and increases an acoustic resistance of the gap between sensors. An electrode is disposed on or in the proximal portion of the beam.

Abstract: The present invention relates to a sleeve for connecting a steel bar, wherein a body prevents generation of tolerance at the circumferential surface of at least one of an upper steel bar and a lower steel bar through a tolerance generation preventing unit, the body allowing the upper steel bar to be inserted from one side thereof in an axial direction and the lower steel bar to be inserted from the other side thereof in the axial direction.

Abstract: A bulk acoustic resonator comprises a membrane including a piezoelectric film having multiple layers of piezoelectric material. At least one of the multiple layers of piezoelectric material has a different dopant concentration than another of the multiple layers of piezoelectric material.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a piezoelectric layer between a first electrode and a second electrode and a suspended frame structure that is suspended over a gap. The gap can be between the first electrode and the piezoelectric layer or between the second electrode and the piezoelectric layer. The bulk acoustic wave devices can have an inner raised frame portion inside of the suspended frame. The gap can be disposed between portions of the first and second electrodes that extend past an end of the piezoelectric layer. A conductive material can extend through an opening in a passivation layer at a location directly above the gap.

Abstract: A bulk acoustic wave (BAW) device is provided comprising a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a raised frame structure outside of a middle area of an active domain of the BAW device, the raised frame structure comprising one or more raised frame layer(s). At least one of the raised frame layer(s) comprises a tapered portion tapering in a direction towards the middle area of the active domain. A packaged module comprising such a BAW device is also provided. A wireless mobile device comprising such a packaged module is also provided.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a piezoelectric layer between a first electrode and a second electrode and a suspended frame structure that is suspended over a gap. The gap can be between the first electrode and the piezoelectric layer or between the second electrode and the piezoelectric layer. The bulk acoustic wave devices can have an inner raised frame portion inside of the suspended frame. The gap can be disposed between portions of the first and second electrodes that extend past an end of the piezoelectric layer. A conductive material can extend through an opening in a passivation layer at a location directly above the gap.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a raised frame structure. The raised frame structure can include a first raised frame layer that has a relatively low acoustic impedance. The raised frame structure can include a second raised frame layer that has a relatively high acoustic impedance. The first raised frame layer can have a thickness that is between about 0.02 and about 0.4 times the combined thickness H of the bulk acoustic wave device. The first raised frame layer can have a thickness that is between about 0.01 and about 0.2 times the resonant wavelength ? of the bulk acoustic wave device.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a raised frame structure. The raised frame structure can include a first raised frame layer that has a relatively low acoustic impedance. The raised frame structure can include a second raised frame layer that has a relatively high acoustic impedance. The first raised frame layer can have a thickness that is between about 0.02 and about 0.4 times the combined thickness H of the bulk acoustic wave device. The first raised frame layer can have a thickness that is between about 0.01 and about 0.2 times the resonant wavelength ? of the bulk acoustic wave device.

Abstract: Devices and methods related to film bulk acoustic resonators. In some embodiments, a film bulk acoustic resonator can be manufactured by a method that includes forming a first electrode having a first lateral shape and providing a piezoelectric layer on the first electrode. The method can further include forming a second electrode having a second lateral shape on the piezoelectric layer such that the piezoelectric layer is between the first and second electrodes. The forming of the first electrode and the forming of the second electrode can include selecting and arranging the first and second lateral shapes to provide a resonator shape defined by an outline of an overlap of the first and second electrodes, such that the resonator shape includes N curved sections joined by N vertices of an N-sided polygon, and such that the resonator shape has no axis of symmetry.

Abstract: The present invention relates to a sleeve for connecting a steel bar, wherein a body prevents generation of tolerance at the circumferential surface of at least one of an upper steel bar and a lower steel bar through a tolerance generation preventing unit, the body allowing the upper steel bar to be inserted from one side thereof in an axial direction and the lower steel bar to be inserted from the other side thereof in the axial direction.

Abstract: Film bulk acoustic resonator having suppressed lateral mode. In some embodiments, a film bulk acoustic resonator can include a piezoelectric layer having a first side and a second side, a first electrode having a first lateral shape implemented on the first side of the piezoelectric layer, and a second electrode having a second lateral shape implemented on the second side of the piezoelectric layer. The first and second lateral shapes can be selected and arranged to provide a resonator shape defined by an outline of an overlap of the first and second electrodes. The resonator shape can include N curved sections joined by N vertices of an N-sided polygon. The resonator shape can be configured to have no axis of symmetry.

Abstract: Film bulk acoustic resonator having suppressed lateral mode. In some embodiments, a film bulk acoustic resonator can include a piezoelectric layer having a first side and a second side, a first electrode having a first lateral shape implemented on the first side of the piezoelectric layer, and a second electrode having a second lateral shape implemented on the second side of the piezoelectric layer. The first and second lateral shapes can be selected and arranged to provide a resonator shape defined by an outline of an overlap of the first and second electrodes. The resonator shape can include N curved sections joined by N vertices of an N-sided polygon. The resonator shape can be configured to have no axis of symmetry.

Abstract: A method for forming an elastic member in a thin film actuated mirror, the method being capable of controlling a stress built up therein, is disclosed. The method includes the steps of: forming a thin film sacrificial layer; depositing an elastic layer on top of the thin film sacrificial layer by using a CVD method; forming an actuating structure on top of the elastic layer, the actuating structure having a first thin film electrode, a thin film electrodisplacive member, a second thin film electrode and an elastic member; and removing the thin film sacrificial layer. In the present invention, the elastic layer is vertically divided into at least two portions, each of the portions being made of a same material having a different stoichiometry. The stress built up in the elastic layer is controlled by controlling the ratio of the source gases.