Patents by Inventor Myung Il Kang
Myung Il Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240120393Abstract: A semiconductor device includes a substrate, a first sheet pattern on the substrate, a gate electrode on the substrate and surrounding the first sheet pattern, a first source/drain pattern and a second source/drain pattern respectively connected to a first end and a second end of the first sheet pattern, a contact blocking pattern on a lower side of the second source/drain pattern, a first source/drain contact extending in a first direction and connected to the first source/drain pattern, and a second source/drain contact connected to the second source/drain pattern and extending in the first direction to contact an upper surface of the contact blocking pattern. A depth from an upper surface of the gate electrode to a lowermost portion of the first source/drain contact may be greater than a depth from the upper surface of the gate electrode to the upper surface of the contact blocking pattern.Type: ApplicationFiled: June 14, 2023Publication date: April 11, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Jisoo PARK, Myung Il KANG, Ji Wook KWON, Jung Han LEE, Subin CHOI
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Patent number: 11916258Abstract: A secondary battery comprises an electrode assembly, a can, and an insulator. The electrode assembly includes a first electrode, a separator, and a second electrode alternately stacked and wound. The can has an accommodation part accommodating the electrode assembly therein, and the can comprises a first can and a second can having cylindrical shapes open in a direction facing each other. The insulator insulates an overlapping portion between the first can and the second can. The first can is electrically connected to the first electrode, and the second can is electrically connected to the second electrode. The insulator has a short-circuit induction through-part defined by a through-hole or a cutoff line, such that a short circuit occurs between the first can and the second can through the short-circuit induction through-part when it is deformed in shape as heat or a pressure is applied to contract or expand the insulator.Type: GrantFiled: October 4, 2019Date of Patent: February 27, 2024Assignee: LG Energy Solution, Ltd.Inventors: Gyung Soo Kang, Jee Ho Kim, Yong Tae Lee, Myung Hoon Ko, Jung Il Park, Ki Youn Kim
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Publication number: 20230352523Abstract: A semiconductor device includes a substrate, an active pattern on the substrate, a plurality of lower nanosheets stacked on the active pattern, a separation structure spaced apart from the plurality of lower nanosheets in the vertical direction and disposed on the plurality of lower nanosheets, and including first to third layers sequentially stacked on each other, a plurality of upper nanosheets spaced apart from the separation structure in the vertical direction and disposed on the separation structure, and stacked on the separation structure, and a gate electrode extending in a second horizontal direction different from the first horizontal direction, and surrounding the separation structure, each of the plurality of lower nanosheets, and each of the plurality of upper nanosheets. The first and third layers include the same material, and each of the first layer and the third layer includes a material different from a material of the second layer.Type: ApplicationFiled: December 12, 2022Publication date: November 2, 2023Inventors: Seung Min SONG, Myung Il KANG, Do Young CHOI
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Patent number: 11508751Abstract: A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.Type: GrantFiled: January 8, 2021Date of Patent: November 22, 2022Assignee: Samsung Electronics Co., Ltd.Inventors: Namkyu Edward Cho, Seok Hoon Kim, Myung Il Kang, Geo Myung Shin, Seung Hun Lee, Jeong Yun Lee, Min Hee Choi, Jeong Min Choi
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Publication number: 20210159246Abstract: A semiconductor device includes an active fin on a substrate, a gate electrode and intersecting the active fin, gate spacer layers on both side walls of the gate electrode, and a source/drain region in a recess region of the active fin at at least one side of the gate electrode. The source/drain region may include a base layer in contact with the active fin, and having an inner end and an outer end opposing each other in the first direction on an inner sidewall of the recess region. The source/drain region may include a first layer on the base layer. The first layer may include germanium (Ge) having a concentration higher than a concentration of germanium (Ge) included in the base layer. The outer end of the base layer may contact the first layer, and may have a shape convex toward outside of the gate electrode on a plane.Type: ApplicationFiled: January 8, 2021Publication date: May 27, 2021Applicant: Samsung Electronics Co., Ltd.Inventors: Namkyu Edward CHO, Seok Hoon KIM, Myung Il KANG, Geo Myung SHIN, Seung Hun LEE, Jeong Yun LEE, Min Hee CHOI, Jeong Min CHOI
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Patent number: 11011516Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.Type: GrantFiled: December 6, 2019Date of Patent: May 18, 2021Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-han Lee, Sun-ghil Lee, Myung-il Kang, Jeong-yun Lee, Seung-hun Lee, Hyun-jung Lee, Sun-wook Kim
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Publication number: 20200111784Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.Type: ApplicationFiled: December 6, 2019Publication date: April 9, 2020Applicant: Samsung Electronics Co., Ltd.Inventors: Jung-han LEE, Sun-ghil LEE, Myung-il KANG, Jeong-yun LEE, Seung-hun LEE, Hyun-jung LEE, Sun-wook KIM
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Patent number: 10586852Abstract: A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.Type: GrantFiled: October 10, 2018Date of Patent: March 10, 2020Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung Han Lee, Myung Il Kang, Jae Hwan Lee, Sun Wook Kim, Seong Ju Kim, Sung Jin Park, Hong Seon Yang, Joo Hee Jung
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Patent number: 10559565Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.Type: GrantFiled: February 28, 2019Date of Patent: February 11, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-han Lee, Sun-ghil Lee, Myung-il Kang, Jeong-yun Lee, Seung-hun Lee, Hyun-jung Lee, Sun-wook Kim
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Publication number: 20190198497Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.Type: ApplicationFiled: February 28, 2019Publication date: June 27, 2019Applicant: Samsung Electronics Co., Ltd.Inventors: Jung-han LEE, Sun-ghil LEE, Myung-il KANG, Jeong-yun LEE, Seung-hun LEE, Hyun-jung LEE, Sun-wook KIM
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Patent number: 10256237Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.Type: GrantFiled: July 21, 2017Date of Patent: April 9, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Jung-han Lee, Sun-ghil Lee, Myung-il Kang, Jeong-yun Lee, Seung-hun Lee, Hyun-jung Lee, Sun-wook Kim
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Publication number: 20190051728Abstract: A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.Type: ApplicationFiled: October 10, 2018Publication date: February 14, 2019Inventors: Jung Han LEE, Myung Il KANG, Jae Hwan LEE, Sun Wook KIM, Seong Ju KIM, Sung Jin PARK, Hong Seon YANG, Joo Hee JUNG
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Patent number: 10109717Abstract: A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.Type: GrantFiled: May 16, 2017Date of Patent: October 23, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung Han Lee, Myung Il Kang, Jae Hwan Lee, Sun Wook Kim, Seong Ju Kim, Sung Jin Park, Hong Seon Yang, Joo Hee Jung
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Publication number: 20180182756Abstract: An integrated circuit (IC) device includes a first and a second fin-type active region protruding from a first region and a second region, respectively, of a substrate, a first and a second gate line, and a first and a second source/drain region. The first fin-type active region has a first top surface and a first recess has a first depth from the first top surface. The first source/drain region fills the first recess and has a first width. The second fin-type active region has a second top surface and a second recess has a second depth from the second top surface. The second depth is greater than the first depth. The second source/drain region fills the second recess and has a second width. The second width is greater than the first width.Type: ApplicationFiled: July 21, 2017Publication date: June 28, 2018Applicant: Samsung Electronics Co., Ltd.Inventors: Jung-han LEE, Sun-ghil Lee, Myung-il Kang, Jeong-yun Lee, Seung-hun Lee, Hyun-jung Lee, Sun-wook Kim
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Publication number: 20180130890Abstract: A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.Type: ApplicationFiled: May 16, 2017Publication date: May 10, 2018Inventors: Jung Han LEE, Myung Il KANG, Jae Hwan LEE, Sun Wook KIM, Seong Ju KIM, Sung Jin PARK, Hong Seon YANG, Joo Hee JUNG
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Patent number: 9881838Abstract: A semiconductor device includes a substrate having a first region and a second region, a plurality of first gate structures in the first region, the first gate structures being spaced apart from each other by a first distance, a plurality of second gate structures in the second region, the second gate structures being spaced apart from each other by a second distance, a first spacer on sidewalls of the first gate structures, a dielectric layer on the first spacer, a second spacer on sidewalls of the second gate structures, and a third spacer on the second spacer.Type: GrantFiled: January 24, 2017Date of Patent: January 30, 2018Assignee: Samsung Electronics Co., Ltd.Inventors: Yoon Hae Kim, Jin Wook Lee, Jong Ki Jung, Myung Il Kang, Kwang Yong Yang, Kwan Heum Lee, Byeong Chan Lee
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Patent number: 8164155Abstract: A method for manufacturing a semiconductor device includes forming an N-well and a P-well formed in a semiconductor substrate. An isolation layer may be formed in the semiconductor substrate. At least one dummy active pattern may be formed in a boundary area between the N-well and the P-well. A salicide blocking layer may be over the upper surface of the at least one dummy active pattern. A non-salicide region may be formed over the upper surface of the at least one dummy active pattern by carrying out a salicide process over the semiconductor substrate provided with the salicide blocking layer.Type: GrantFiled: August 5, 2009Date of Patent: April 24, 2012Assignee: Dongbu HiTek Co., Ltd.Inventor: Myung-Il Kang
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Patent number: 7811927Abstract: A method of manufacturing a metal line according to embodiments includes forming an interlayer dielectric layer over a semiconductor substrate. A dielectric layer is formed over the interlayer dielectric layer. A trench may be formed by etching the dielectric layer and the interlayer dielectric layer. A metal material may be disposed over the interlayer dielectric layer including the trench. A first planarization process may be performed on the metal material using the dielectric layer as an etch stop layer. A wet etch process may be performed on the semiconductor substrate subjected the first planarization process. A second planarization process may be performed on interlayer dielectric layer subjected to the wet etch process.Type: GrantFiled: July 22, 2008Date of Patent: October 12, 2010Assignee: Dongbu HiTek Co., Ltd.Inventor: Myung-Il Kang
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Patent number: 7781864Abstract: A capacitor includes a first lower metal layer and an insulating layer on a lower interlayer dielectric layer of a semiconductor substrate; a first upper metal layer aligned on the insulating layer to partially expose it; a first capping layer and an upper interlayer dielectric layer on the insulating layer including the first upper metal layer; a second lower metal layer connected to the first upper metal layer through the upper interlayer dielectric layer and the first capping layer; a second capping layer aligned on the upper interlayer dielectric layer including the second lower metal layer and formed with a hole for partially exposing the second lower metal layer; a pad aligned on the second capping layer and connected to the second lower metal layer; a protective layer on the second capping layer; and a second upper metal layer aligned on the second capping layer.Type: GrantFiled: December 9, 2008Date of Patent: August 24, 2010Assignee: Dongbu HiTek Co., Ltd.Inventor: Myung-Il Kang
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Patent number: 7682928Abstract: There is provided a method of forming an isolation layer which prevents a failure from occurring depending on a difference in the area of the isolation layer during a planarization process of the isolation layer having a shallow trench isolation (STI) structure. The present invention implements a uniform isolation layer by forming a chemical mechanical polishing (CMP) stop layer on an isolation layer having a relatively large region and performing a planarization process using the CMP stop layer.Type: GrantFiled: December 21, 2006Date of Patent: March 23, 2010Assignee: Dongbu Electronics Co., Ltd.Inventor: Myung Il Kang