Abstract: Provided are a cement mortar additive for extrusion molding, a cement mortar for extrusion molding, and an extrusion-molded product. The disclosed cement mortar additive for extrusion molding includes hydrogelated cellulose ether.

Abstract: Provided are a cement mortar additive for extrusion molding, a cement mortar for extrusion molding, and an extrusion-molded product. The disclosed cement mortar additive for extrusion molding includes hydrogelated cellulose ether.

Abstract: A resistive memory device includes a first electrode and a first insulation layer arranged on the first electrode. A portion of the first electrode is exposed through a first hole in the first insulation layer. A first variable resistance layer contacts the exposed portion of the first electrode and extends on the first insulation layer around the first hole. A first switching device electrically connects to the first resistive switching layer.

Abstract: A semiconductor memory device comprises a memory array including a plurality of bit lines and a plurality of dummy bit lines, a bias application unit configured to supply bias voltages having a plurality of voltage levels to the plurality of dummy bit lines, a standby current measuring unit configured to measure a value of at least one of standby currents between at least one of the plurality of bit lines and at least one of the plurality of dummy bit lines. Each of the standby currents is generated by each of the bias voltages applied by the bias application unit.

Abstract: A method and apparatus to restore a system using virtualization, the method including: if a system restoration at a target restoration time point from among at least one restoration time points is requested, generating a virtualization layer; if a use of a system is requested by an application layer, accessing the target restoration time point using the virtualization layer; and performing a system restoration at the accessed target restoration time point.

Abstract: Provided are resistive random access memories (RRAMs) and methods of manufacturing the same. A RRAM includes a storage node including a variable resistance layer, a switching device connected to the storage node, and a protective layer covering an exposed part of the variable resistance layer. The protective layer includes at least one of aluminum oxide and titanium oxide. The variable resistance layer is a metal oxide layer.

Abstract: Example embodiments provide a method for programming a resistive memory device that includes a resistance conversion layer. The method may include applying multiple pulses to the resistance conversion layer. The multiple pulses may include at least two pulses, where a magnitude of each pulse of the at least two pulses is the same. A first pulse of the at least two pulses may be applied on one side of the resistance conversion layer and a second pulse of the at least two pulses may be applied on the other side of the resistance conversion layer. The applying step may be performed during a set programming operation or a reset programming operation. A resistive memory device for programming a resistance conversion layer may include a first and second electrode, a lower structure, and the resistance conversion layer coupled between the first and second electrodes.

Abstract: A semiconductor memory device comprises a memory array including a plurality of bit lines and a plurality of dummy bit lines, a bias application unit configured to supply bias voltages having a plurality of voltage levels to the plurality of dummy bit lines, a standby current measuring unit configured to measure a value of at least one of standby currents between at least one of the plurality of bit lines and at least one of the plurality of dummy bit lines. Each of the standby currents is generated by each of the bias voltages applied by the bias application unit.

Abstract: Provided are a file system configuration method and apparatus for data security, a method and apparatus for accessing a data security area formed by the same, and a data storage device accessed by the same. A method of configuring a file system comprising a general area in which general data is stored and a security area in which security data is stored, in a storage device, includes generating a first file system format corresponding to the general area to store the first file system format in a buffer; generating a second file system format corresponding to the security area and storing the second file system format in the buffer so as to allow an authorized user to read data stored in the general area and not to allow the authorized user to write data to the general area when the authorized user accesses the security area; and configuring the file system of the storage device by using the first and second file system formats stored in the buffer.

Abstract: A method and apparatus to restore a system using virtualization, the method including: if a system restoration at a target restoration time point from among at least one restoration time points is requested, generating a virtualization layer; if a use of a system is requested by an application layer, accessing the target restoration time point using the virtualization layer; and performing a system restoration at the accessed target restoration time point.

Abstract: Disclosed is a chip scale package tray. The chip scale package tray includes: a rectangular frame 10; a plurality of seat members 20 formed from a material relatively soft and superior in frictional force as compared to the frame 10, the seat members 20 being arranged on the top of the frame 10 in a grid pattern, a semiconductor chip being loaded on the top of each of the seat members 20; and a plurality of support members 30 formed from a material relatively soft and superior in frictional force as compared to the frame 10, the support members 30 being attached to the bottom of the frame 10 to be opposed to the seat members 20.

Abstract: Example embodiments provide a method for programming a resistive memory device that includes a resistance conversion layer. The method may include applying multiple pulses to the resistance conversion layer. The multiple pulses may include at least two pulses, where a magnitude of each pulse of the at least two pulses is the same. A first pulse of the at least two pulses may be applied on one side of the resistance conversion layer and a second pulse of the at least two pulses may be applied on the other side of the resistance conversion layer. The applying step may be performed during a set programming operation or a reset programming operation. A resistive memory device for programming a resistance conversion layer may include a first and second electrode, a lower structure, and the resistance conversion layer coupled between the first and second electrodes.

Abstract: A resistive memory device includes a first electrode and a first insulation layer arranged on the first electrode. A portion of the first electrode is exposed through a first hole in the first insulation layer. A first variable resistance layer contacts the exposed portion of the first electrode and extends on the first insulation layer around the first hole. A first switching device electrically connects to the first resistive switching layer.

Abstract: Provided are resistive random access memories (RRAMs) and methods of manufacturing the same. A RRAM includes a storage node including a variable resistance layer, a switching device connected to the storage node, and a protective layer covering an exposed part of the variable resistance layer. The protective layer includes at least one of aluminum oxide and titanium oxide. The variable resistance layer is a metal oxide layer.

Abstract: A method for continuous ethylene polymerization under high pressure using a polymerization reaction zone comprises a primary reaction zone and a secondary reaction zone wherein the secondary reaction zone has a length of 1.5-6.5 times the length of the primary reaction zone and a cross-sectional area of 1.2-4 times the cross-sectional area of the primary reaction zone. Ethylene is fed continuously into the primary reaction zone at the starting point of the primary reaction zone. Low temperature initiator alone, or an initiator mixture containing mainly low temperature initiator is introduced into the primary reaction zone at the starting point of the primary reaction zone. Initiator alone or an initiator mixture is introduced into the secondary reaction zone at two or more different points of the secondary reaction zone. Ethylene polymer products of various physical properties are produced with high productivity, while the pressure drop is minimized.

Abstract: A method for displaying a call record list in a wireless telecommunication terminal is disclosed. The method includes the steps of: reading a stored call record in response to a call record list searching request; collecting call records having identical caller information in form of a list in sequence of time; and displaying caller information together with more than one icon of the call records.

Abstract: A method for continuous ethylene polymerization under high pressure using a polymerization reaction zone comprises a primary reaction zone and a secondary reaction zone wherein the secondary reaction zone has a length of 1.5-6.5 times the length of the primary reaction zone and a cross-sectional area of 1.2-4 times the cross-sectional area of the primary reaction zone. Ethylene is fed continuously into the primary reaction zone at the starting point of the primary reaction zone. Low temperature initiator alone, or an initiator mixture containing mainly low temperature initiator is introduced into the primary reaction zone at the starting point of the primary reaction zone. Initiator alone or an initiator mixture is introduced into the secondary reaction zone at two or more different points of the secondary reaction zone. Ethylene polymer products of various physical properties are produced with high productivity, while the pressure drop is minimized.

Abstract: A method for displaying a call record list in a wireless telecommunication terminal is disclosed. The method includes the steps of: reading a stored call record in response to a call record list searching request; collecting call records having identical caller information in form of a list in sequence of time; and displaying caller information together with more than one icon of the call records.

Abstract: Disclosed is a method of implementing an embedded system for mobile communication capable of speedy and reliable information processing that is compatible with a wide variety of devices. The method includes the steps of: a) implementing a cross-development environment for a target system; b) implementing a network environment for communication between a host system and the target system; c) configuring a boot loader of the target system; d) configuring a kernel of the target system, wherein the kernel is an embedded Linux kernel; and e) implementing a graphical user interface (GUI) environment for the target system.

Abstract: The present invention relates to a packing apparatus for pressure type soil-nailing and soil-nailing construction method using the apparatus, can shorten a grouting time through pressure type grouting which seals completely grouting area, and can improve stability of a ground reinforcing body by filling liquid grout to even a gap between a boring hole and the ground and void of the ground.