Abstract: The present invention relates to a novel phenylsulfonyl oxazole derivative and a use thereof and specifically, to a compound represented by Chemical Formula 1 in the present specification or a pharmaceutically acceptable salt thereof, and to a use thereof for prevention, treatment, or improvement of neurodegenerative disease.

Abstract: The present invention relates to a novel phenylsulfonyl oxazole derivative and a use thereof and specifically, to a compound represented by Chemical Formula 1 in the present specification or a pharmaceutically acceptable salt thereof, and to a use thereof for prevention, treatment, or improvement of neurodegenerative disease.

Abstract: Provided are a compound of chemical formula 1 or 2 and a use thereof. The compound can be advantageously used in the prevention or treatment of metabolic diseases including type 2 diabetes, insulin resistance, or obesity, on the basis of a mechanism of autophagy activation through the promotion of lysosome production.

Abstract: Provided are a compound of chemical formula 1 or 2 and a use thereof. The compound can be advantageously used in the prevention or treatment of metabolic diseases including type 2 diabetes, insulin resistance, or obesity, on the basis of a mechanism of autophagy activation through the promotion of lysosome production.

Abstract: A semiconductor memory device includes a memory cell block formed over a first memory cell region and a second memory cell region defined on a semiconductor substrate, and a voltage supply circuit configured to apply an operating voltage to gate lines of a plurality of memory cells included in the memory cell block, wherein a first air gap disposed between the gate lines in the first memory cell region has a smaller size than a second air gap disposed between the gate lines in the second memory cell region.

Abstract: A method for fabricating a non-volatile memory device with asymmetric source/drain junctions, wherein a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate. Thermal treatment of the semiconductor substrate forms an asymmetrically disposed source/drain junction between adjacent gate stacks.

Abstract: A method for fabricating a non-volatile memory device with asymmetric source/drain junctions, wherein a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate. Thermal treatment of the semiconductor substrate forms an asymmetrically disposed source/drain junction between adjacent gate stacks.

Abstract: Disclosed herein are non-volatile memory devices with asymmetric source/drain junctions and a method for fabricating the same. According to the method, a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate. Thermal treatment of the semiconductor substrate forms an asymmetrically disposed source/drain junction between adjacent gate stacks.

Abstract: A method of manufacturing a nonvolatile memory device includes forming a tunnel insulating layer over a semiconductor substrate, forming a charge trap layer, including first impurity ions of a first concentration, over the tunnel insulating layer, forming a compensation layer, including second impurity ions of a second concentration, over the charge trap layer, diffusing the second impurity ions within the compensation layer toward the charge trap layer, removing the compensation layer, forming a dielectric layer on surfaces of the charge trap layer, and forming a conductive layer for a control gate on the dielectric layer.

Abstract: A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.

Abstract: A method of manufacturing a nonvolatile memory device includes forming a tunnel insulating layer over a semiconductor substrate, forming a charge trap layer, including first impurity ions of a first concentration, over the tunnel insulating layer, forming a compensation layer, including second impurity ions of a second concentration, over the charge trap layer, diffusing the second impurity ions within the compensation layer toward the charge trap layer, removing the compensation layer, forming a dielectric layer on surfaces of the charge trap layer, and forming a conductive layer for a control gate on the dielectric layer.

Abstract: A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.

Abstract: Disclosed herein are non-volatile memory devices with asymmetric source/drain junctions and a method for fabricating the same. According to the method, a gate stack is formed on a semiconductor substrate, and impurity ions are implanted at a predetermined angle to form a source/drain junction in the semiconductor substrate. Thermal treatment of the semiconductor substrate forms an asymmetrically disposed source/drain junction between adjacent gate stacks.

Abstract: A nonvolatile memory device and a method of fabricating the same is provided to prevent charges stored in a charge trap layer from moving to neighboring memory cells. The method of fabricating a nonvolatile memory device, includes forming a first dielectric layer on a semiconductor substrate in which active regions are defined by isolation layers, forming a charge trap layer on the first dielectric layer, removing the first dielectric layer and the charge trap layer over the isolation layers, forming a second dielectric layer on the isolation layers including the charge trap layer, and forming a conductive layer on the second dielectric layer.