Abstract: A method for forming a fine pattern in a semiconductor device removes roughness from a pattern produced in a fine pattern fabrication process using a silylation process as being one kind of a TSI process, eliminates smoothly a photosensitive film residue caused by a residue silylation layer remained on a-non-pattern area, and increases a margin of a lithography process. To achieve the foregoing, the method performs an etching process with a fluorine/oxygen mixture gas so as to remove a thin oxide film being formed on the non-pattern area after a silylation process, enables an edge portion of a silylation region to be planarized so as to prevent the pattern from becoming rough, and forms a photosensitive film pattern by developing the photosensitive film with oxygen plasma. Thereafter, the photosensitive film residue is etched again with a mixture gas of fluorine/oxygen, thereby increasing a fabrication margin of the fine pattern.

Abstract: The present invention relates to a microwave filter, having U-type resonators, which passes a desired frequency signal and removes an undesired frequency signal when used in a high frequency antenna circuit for wireless communication systems. In accordance with the trend of reducing communication system terminals, it is required to reduce a high frequency filter. The high frequency filter is required to attenuate signals very sharply at the stop band especially near to a passband transmitting and receiving frequency, so as to improve the efficiency of the frequency. The filter may be reduced in weight by forming U-type resonators instead of straight-type resonators. Excellent attenuation characteristics may be achieved at the stop band lower than the passband, using the difference of the characteristic impedance between the open end portion and the shorted portion of the resonator by forming the coupling control grooves at the outer walls of the dielectric block.