Abstract: A semiconductor device includes a substrate that includes a first region and a second region, a first active pattern on the first region and that extends in a first horizontal direction, a second active pattern on the second region and that extends in the first horizontal direction, a first etch stop layer on the first active pattern, a second etch stop layer on the second active pattern, a plurality of first nanosheets on the first etch stop layer and that are stacked in a vertical direction and include silicon germanium (SiGe), a plurality of second nanosheets on the second etch stop layer and that are stacked in the vertical direction, a first gate electrode on the first etch stop layer and that extends in a second horizontal direction, and a second gate electrode disposed on the second etch stop layer and that extends in the second horizontal direction.

Abstract: Disclosed herein is an automatic curling iron having a structure in which a cylindrical heating body is easily separable from a main body, with the consequence that the cylindrical heating body can be replaced with a different cylindrical heating body having a brush, and the automatic curling iron not only occupies a small volume when stored but also simplifies hair styling since the cylindrical heating body is rotated to the left merely by operating a switch button. The automatic curling iron includes a main body, and a cylindrical heating body rotatably coupled to one side of the main body. The main body includes a main body casing, a motor, a rotary shaft, a fixed terminal section, and a rotary terminal. The cylindrical heating body includes a heating body casing, a heating element, and a heating element terminal section.

Abstract: A semiconductor device includes first and second well regions having a first conductivity type, and a third well region between the first and second well regions having a second conductivity type different from the first conductivity type. A first active region is in the first well region. A second active region is in the second well region. A third active region is in the third well region. The third active region is closer to the second active region than to the first active region. A fourth active region is in the third well region. The fourth active region is closer to the first active region than to the second active region. A first conductive pattern is across the first and third active regions. A second conductive pattern is across the second and fourth active regions and parallel to the first conductive pattern.

Abstract: A hair dryer is disclosed. The hair dryer includes a power supply for supplying electric power, a voltage detector for detecting a voltage of the electric power supplied from the power supply, a controller for controlling a driving speed of a motor in accordance with the voltage detected by the voltage detector, and a motor unit comprising first and second triacs to be selectively turned in accordance with the voltage detected by the voltage detector under a control of the controller, a rectifier to be turned on by a selected one of the first and second triacs, and the motor. The motor receives the voltage from the rectifier.

Abstract: A semiconductor device includes first and second well regions having a first conductivity type, and a third well region between the first and second well regions having a second conductivity type different from the first conductivity type. A first active region is in the first well region. A second active region is in the second well region. A third active region is in the third well region. The third active region is closer to the second active region than to the first active region. A fourth active region is in the third well region. The fourth active region is closer to the first active region than to the second active region. A first conductive pattern is across the first and third active regions. A second conductive pattern is across the second and fourth active regions and parallel to the first conductive pattern.

Abstract: A semiconductor device includes first and second well regions having a first conductivity type, and a third well region between the first and second well regions having a second conductivity type different from the first conductivity type. A first active region is in the first well region. A second active region is in the second well region. A third active region is in the third well region. The third active region is closer to the second active region than to the first active region. A fourth active region is in the third well region. The fourth active region is closer to the first active region than to the second active region. A first conductive pattern is across the first and third active regions. A second conductive pattern is across the second and fourth active regions and parallel to the first conductive pattern.

Abstract: A hair dryer is disclosed. The hair dryer includes a power supply for supplying electric power, a voltage detector for detecting a voltage of the electric power supplied from the power supply, a controller for controlling a driving speed of a motor in accordance with the voltage detected by the voltage detector, and a motor unit comprising first and second triacs to be selectively turned in accordance with the voltage detected by the voltage detector under a control of the controller, a rectifier to be turned on by a selected one of the first and second triacs, and the motor. The motor receives the voltage from the rectifier.

Abstract: A semiconductor device includes first and second well regions having a first conductivity type, and a third well region between the first and second well regions having a second conductivity type different from the first conductivity type. A first active region is in the first well region. A second active region is in the second well region. A third active region is in the third well region. The third active region is closer to the second active region than to the first active region. A fourth active region is in the third well region. The fourth active region is closer to the first active region than to the second active region. A first conductive pattern is across the first and third active regions. A second conductive pattern is across the second and fourth active regions and parallel to the first conductive pattern.