Abstract: Disclosed are a biaxial liquid crystal compound, a liquid crystal composition comprising the same, and an optical film using the same liquid crystal composition. More particularly, there is provided a liquid crystal material of a viewing angle compensation film with high quality characteristics, which can improve a contrast ratio and minimize variations in color with viewing angles in a black state, a liquid crystal composition comprising the same liquid crystal material, and a compensation film obtained from the same liquid crystal composition.

Abstract: The present invention relates to a pyran derivative which manifests appropriate refractive anisotropy (optical anisotropy) and liquid crystal transition temperature and excellent dielectric anisotropy, and has excellent compatibility with various liquid crystal compounds, and thus, can be preferably used for the formation of a liquid crystal layer of a liquid crystal display device, its preparation method, a liquid crystal composition and liquid crystal display device comprising the same.

Abstract: Disclosed are a novel fluorene derivative, a liquid crystal composition comprising the same, and an optical film using the same liquid crystal composition. More particularly, there are provided a liquid crystal material for a viewing angle compensation film with high quality characteristics, which can improve a contrast ratio measured at an oblique angle to the front and minimize variations in color with viewing angles in a black state, a liquid crystal composition comprising the same liquid crystal material, and a compensation film obtained from the same liquid crystal composition.

Abstract: Disclosed is a novel liquid crystal compound, a liquid crystal composition comprising the same, and an optical film using the same liquid crystal composition. More particularly, there is provided a liquid crystal material of a viewing angle compensation film with high quality characteristics, which can improve a contrast ratio and minimize variations in color with viewing angles in a black state, a liquid crystal composition comprising the same liquid crystal material, and a compensation film obtained from the same liquid crystal composition.

Abstract: The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same, and more particularly to a coating composition for insulating film production having a low dielectric constant and that is capable of producing an insulating film with superior mechanical strength (elasticity), a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same. The coating composition of the present invention comprises an organic siloxane resin having a small molecular weight, and water, and significantly improves low dielectricity and mechanical strength of an insulating film.

Abstract: The present invention relates to a coating composition for a dielectric insulating film comprising a) an organosiloxane polymer, b) first metal ions selected from the group consisting of Rb ions, Cs ions, and a mixture thereof, and c) an organic solvent, in which the first metal ions are comprised at 1 to 200 ppm based on the weight of the composition, a dielectric insulating film prepared therefrom, and an electric or electronic device comprising the same. A dielectric insulating film prepared from the coating composition of the present invention has an improved dielectric constant and superior mechanical strength and electric properties.

Abstract: The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film.

Abstract: The present invention relates to a coating composition for a dielectric insulating film comprising a) an organosiloxane polymer, b) first metal ions selected from the group consisting of Rb ions, Cs ions, and a mixture thereof, and c) an organic solvent, in which the first metal ions are comprised at 1 to 200 ppm based on the weight of the composition, a dielectric insulating film prepared therefrom, and an electric or electronic device comprising the same. A dielectric insulating film prepared from the coating composition of the present invention has an improved dielectric constant and superior mechanical strength and electric properties.

Abstract: Disclosed is a novel radially multi-branched polymer. The radially multi-branched polymer includes a central molecule to which side-branches are bonded in at least three positions and has an average molecular weight of 500 to 100,000, the side-branch being selected from the group consisting of a polyalkylene oxide, a polyacrylate, a polyester, a polyamide and derivatives thereof. The radially multi-branched polymer is used for manufacturing a low dielectric insulating film to provide a low dielectric insulating film having easily controllable micropores.

Abstract: The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same, and more particularly to a coating composition for insulating film production having a low dielectric constant and that is capable of producing an insulating film with superior mechanical strength (elasticity), a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same. The coating composition of the present invention comprises an organic siloxane resin having a small molecular weight, and water, and significantly improves low dielectricity and mechanical strength of an insulating film.

Abstract: The present invention relates to a coating composition for a film with low refractive index and a film prepared therefrom, and more precisely, a coating composition with low refractive index which contains dispersed porous organic/inorganic hybrid nano-particles or a colloid containing the dispersed nano-particles, a photocurable compound having unsaturated functional groups, photoinitiator or photosensitizer, or an organic siloxane thermosetting compound, and a solvent and a film prepared therefrom. According to the present invention, porous particles have been formed by using a structural regulator in a silane compound at a specific size, in order to be fitted for a film with low refractive index, and then the structural regulator has been eliminated by a simple process beforeforming the film, resulting in preparation of a film with extremely low refractive index at a low temperature of up to 120° C.

Abstract: The present invention relates to a low dielectric material essential for a next generation electric device such as a semiconductor device, with a high density and high performance. In detail, the present invention provides: a process for preparing an organic silicate polymer comprising a polymerization step in the absence of homogenizing organic solvents, of mixing and reacting organic silane compounds with water in the presence of a catalyst to hydrolyze and condense the silane compounds, that is thermally stable and has good mechanical and crack resistance properties; and a coating composition for forming a low dielectric insulating film; and a process for preparing a low dielectric insulating film using the organic silicate polymer prepared according to the process, and an electric device comprising the low dielectric insulating film prepared according to the process.

Abstract: The present invention relates to a coating composition for insulating film production, a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same, and more particularly to a coating composition for insulating film production having a low dielectric constant and that is capable of producing an insulating film with superior mechanical strength (elasticity), a preparation method of a low dielectric insulating film using the same, a low dielectric insulating film for a semiconductor device prepared therefrom, and a semiconductor device comprising the same. The coating composition of the present invention comprises an organic siloxane resin having a small molecular weight, and water, and significantly improves low dielectricity and mechanical strength of an insulating film.

Abstract: Described is a radially multi-branched polymer represented by the following formula (I): ABi (I), which includes a central molecule (A) to which side-branches (B) are bonded in at least three positions (i?3). Also described are methods for preparing a multi-branched polymer as well as a porous insulating film including a multi-branched polymer.

Abstract: The present invention relates to low a dielectric material essential for a next generation semiconductor with high density and high performance, and more particularly to a low dielectric material that is thermally stable and has good film-forming properties and excellent mechanical properties, a dielectric film comprising the low dielectric material, and a semiconductor device manufactured using the dielectric film.

Abstract: Provided is a process for manufacturing an insulating film for a semiconductor device. The process includes preparing a composition for forming an insulating film, wherein the composition comprises a) an organosilicate polymer and b) an organic solvent. The composition is coated on a substrate of a semiconductor device to prepare a coated insulating film, and the coated insulated film is dried and cured. Also provided are an insulating film prepared as described as well as a semiconductor device comprising the insulating film.

Abstract: The present invention relates to an organic silicate polymer prepared by mixing silane compound with organic solvent to prepare a first mixture, and hydrolyzing and condensing the first mixture by adding water and catalyst, the first mixture being selected from a group consisting of oxidized hydrosilane, cyclic siloxane, a second mixture of oxidized hydrosilane and silane or silane oligomer, and a third mixture of cyclic siloxane and silane or silane oligomer, a composition for forming an insulation film of semiconductor devices prepared by using the organic silicate polymer, a method for preparing an insulation film using the composition, and a semiconductor device comprising the insulation film.

Abstract: The present invention relates to a coating composition for a dielectric insulating film comprising a) an organosiloxane polymer, b) first metal ions selected from the group consisting of Rb ions, Cs ions, and a mixture thereof, and c) an organic solvent, in which the first metal ions are comprised at 1 to 200 ppm based on the weight of the composition, a dielectric insulating film prepared therefrom, and an electric or electronic device comprising the same. A dielectric insulating film prepared from the coating composition of the present invention has an improved dielectric constant and superior mechanical strength and electric properties.

Abstract: The present invention relates to a nanopore-forming material for forming an insulating film for a semiconductor device, and more particularly to a nanopore-forming organic material containing a triazine functional group and preparation thereof, and a composition for forming an insulating film for a semiconductor device comprising the same, an insulating film using the same, and a manufacturing process thereof. The pore-forming material of the present invention is easy to synthesize, and the molecular weight, molecular structure, and microenvironment thereof are easy to control, and thus it is suitable for a nanopore-forming material.

Abstract: The present invention relates to a composition for forming a low dielectric insulating film for a semiconductor device, particularly to an organosilicate polymer prepared by mixing a thermally decomposable organic silane compound that is capped with a silane compound at both its ends, and a common silane compound or silane oligomer, and then adding water and a catalyst to conduct hydrolysis and condensation, as well as to a coating composition for an insulating film for a semiconductor device comprising the same, a coating composition for an insulating film for a semiconductor device further comprising a pore-forming organic substance, a method for preparing an insulating film for a semiconductor device by coating the composition and curing, and a semiconductor device comprising a low dielectric insulating film prepared by the method.