Abstract: Semiconductor packages and methods of fabricating the same are provided. The semiconductor package includes a first package substrate including a first area, a first semiconductor chip mounted on the first area, a second package substrate disposed on an upper surface of the first semiconductor chip and including a second area and a first hole penetrating through the second area, a second semiconductor chip mounted on the second area, a connection member electrically connecting the first package substrate and the second package substrate and between the first package substrate and the second package substrate, and a mold film covering the second semiconductor chip on the second package substrate, filling the first hole, and covering the first semiconductor chip and the connection member on the first package substrate.

Abstract: An image encoding/decoding method is provided. An image decoding method of the present invention may comprise deriving an intra-prediction mode of a current luma block, deriving an intra-prediction mode of a current chroma block based on the intra-prediction mode of the current luma block, generating a prediction block of the current chroma block based on the intra-prediction mode of the current chroma block, and the deriving of an intra-prediction mode of a current chroma block may comprise determining whether or not CCLM (Cross-Component Linear Mode) can be performed for the current chroma block.

Abstract: A steel for a gear includes, based on a total weight of the steel: C: 0.10-0.30 wt %, Si: 0.60-0.80 wt %, Mn: 0.25-0.75 wt %, Cr: 1.80-2.20 wt %, Ni: 0.50-1.50 wt %, Mo: 0.20-0.40 wt %, Nb: 0.025-0.050 wt %, V: 0.030-0.050 wt %, and a balance of Fe and inevitable impurities, wherein contents of Nb and V satisfy the following <Relationship Formula 1>: 0.055<[Nb]+[V]<0.100??<Relationship Formula 1>, wherein [Nb] represents a content of Nb and [V] represents a content of V.

Abstract: In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Abstract: An image encoding/decoding method is provided. An image decoding method of the present invention may comprise deriving an intra-prediction mode of a current luma block, deriving an intra-prediction mode of a current chroma block based on the intra-prediction mode of the current luma block, generating a prediction block of the current chroma block based on the intra-prediction mode of the current chroma block, and the deriving of an intra-prediction mode of a current chroma block may comprise determining whether or not CCLM (Cross-Component Linear Mode) can be performed for the current chroma block.

Abstract: The present invention provides a method for manufacturing seasoned laver, the method comprising the steps of: 1) toasting dried laver in a toasting tunnel at 50˜200° C. for 2-3 seconds; 2) applying oil to a surface of the laver resulting from step 1), and seasoning the oil-applied laver with salt; 3) further toasting the seasoned laver of step 2) in a toasting tunnel at 200˜400° C. for 5-7 seconds; 4) spraying and applying oil to the surface of the laver resulting from step 3).

Abstract: The present invention relates to a low calorie coffee mix composition with a natural sweet taste prepared by using D-tagatose instead of sugar for a diet or a low calorie coffee mix.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.