Abstract: The present disclosure generally relates to a method and apparatus for loading, processing, and unloading substrates. A processing system comprises a load/unload system coupled to a photolithography system. The load/unload system comprises a first set of tracks having a first height and a first width, and a second set of tracks having a second height and a second width different than the first height and first width. An unprocessed substrate is transferred from a lift pin loader to a chuck along the first set of tracks on a first tray while a processed substrate is transferred from the chuck to the lift pin loader along the second set of tracks on a second tray. While a first tray remains with a substrate on the chuck during processing, the load/unload system is configured to unload a processed substrate and load an unprocessed substrate on a second tray.

Abstract: The present disclosure generally relates to a method and apparatus for loading, processing, and unloading substrates. A processing system comprises a load/unload system coupled to a photolithography system. The load/unload system comprises a first set of tracks having a first height and a first width, and a second set of tracks having a second height and a second width different than the first height and first width. An unprocessed substrate is transferred from a lift pin loader to a chuck along the first set of tracks on a first tray while a processed substrate is transferred from the chuck to the lift pin loader along the second set of tracks on a second tray. While a first tray remains with a substrate on the chuck during processing, the load/unload system is configured to unload a processed substrate and load an unprocessed substrate on a second tray.

Abstract: Embodiments described herein provide a system, a software application, and methods of a lithography process that provide at least one of the ability to decrease the stabilization time and write an exposure pattern into a photoresist on a substrate compensating for the change in the total pitch over a stabilization time. One embodiment of the system includes a slab, a stage disposed over the slab, a pair of supports disposed on the slab, a processing apparatus, and a chiller system. The pair of supports support a pair of tracks and the stage is configured to move along the pair of tracks. The processing apparatus has an apparatus support coupled to the slab and a processing unit supported by the apparatus support. The processing unit has a plurality of image projection systems. The chiller system has at least one fluid channel disposed in each track of the pair of tracks.

Abstract: The present disclosure generally relates to a method and apparatus for loading, processing, and unloading substrates. A processing system comprises a load/unload system coupled to a photolithography system. The load/unload system comprises a first set of tracks having a first height and a first width, and a second set of tracks having a second height and a second width different than the first height and first width. An unprocessed substrate is transferred from a lift pin loader to a chuck along the first set of tracks on a first tray while a processed substrate is transferred from the chuck to the lift pin loader along the second set of tracks on a second tray. While a first tray remains with a substrate on the chuck during processing, the load/unload system is configured to unload a processed substrate and load an unprocessed substrate on a second tray.

Abstract: Embodiments described herein provide a system, a software application, and methods of a lithography process that provide at least one of the ability to decrease the stabilization time and write an exposure pattern into a photoresist on a substrate compensating for the change in the total pitch over a stabilization time. One embodiment of the system includes a slab, a stage disposed over the slab, a pair of supports disposed on the slab, a processing apparatus, and a chiller system. The pair of supports support a pair of tracks and the stage is configured to move along the pair of tracks. The processing apparatus has an apparatus support coupled to the slab and a processing unit supported by the apparatus support. The processing unit has a plurality of image projection systems. The chiller system has at least one fluid channel disposed in each track of the pair of tracks.

Abstract: Embodiments described herein provide a system, a software application, and methods of a lithography process that provide at least one of the ability to decrease the stabilization time and write an exposure pattern into a photoresist on a substrate compensating for the change in the total pitch over a stabilization time. One embodiment of the system includes a slab, a stage disposed over the slab, a pair of supports disposed on the slab, a processing apparatus, and a chiller system. The pair of supports support a pair of tracks and the stage is configured to move along the pair of tracks. The processing apparatus has an apparatus support coupled to the slab and a processing unit supported by the apparatus support. The processing unit has a plurality of image projection systems. The chiller system has at least one fluid channel disposed in each track of the pair of tracks.

Abstract: Embodiments described herein provide a system, a software application, and methods of a lithography process that provide at least one of the ability to decrease the stabilization time and write an exposure pattern into a photoresist on a substrate compensating for the change in the total pitch over a stabilization time. One embodiment of the system includes a slab, a stage disposed over the slab, a pair of supports disposed on the slab, a processing apparatus, and a chiller system. The pair of supports support a pair of tracks and the stage is configured to move along the pair of tracks. The processing apparatus has an apparatus support coupled to the slab and a processing unit supported by the apparatus support. The processing unit has a plurality of image projection systems. The chiller system has at least one fluid channel disposed in each track of the pair of tracks.

Abstract: The present disclosure generally relates to a method and apparatus for loading, processing, and unloading substrates. A processing system comprises a load/unload system coupled to a photolithography system. The load/unload system comprises a first set of tracks having a first height and a first width, and a second set of tracks having a second height and a second width different than the first height and first width. An unprocessed substrate is transferred from a lift pin loader to a chuck along the first set of tracks on a first tray while a processed substrate is transferred from the chuck to the lift pin loader along the second set of tracks on a second tray. While a first tray remains with a substrate on the chuck during processing, the load/unload system is configured to unload a processed substrate and load an unprocessed substrate on a second tray.

Abstract: Processing systems and methods used in the manufacturing of flat panel displays (FPDs) are provided herein. In one embodiment, a processing system features a motion stage movably disposed on a base surface, one or more X-position interferometers, and a plurality of Y-position interferometers. The X-position interferometers include an X-position mirror fixedly coupled to the motion stage and an X-axis stationary module fixedly coupled a non-moving surface of processing system. Each of the plurality of Y-position interferometers include one of a first or second Y-position mirror fixedly coupled to the motion stage in orthogonal relationship to the one or more X-position mirrors and one of a first or a second Y-axis stationary module fixedly coupled to a non-moving surface of the processing system. Here, each of the Y-axis stationary modules is positioned to direct coherent radiation towards a respective Y-position mirror when the Y-position interferometer thereof is in an active arrangement.

Abstract: The present invention relates to a pharmaceutical composition for preventing and treating corneal diseases or conjunctival diseases, containing a maple leaf extract as an active ingredient. The maple leaf extract exhibits an effect of inhibiting hyperemia in the eyeball in which hyperemia has been induced and an effect of inhibiting angiogenesis in the eyeball in which corneal damage has been induced, thus being effectively used in a pharmaceutical composition for preventing and treating corneal diseases or conjunctival diseases.

Abstract: The present invention relates to a pharmaceutical composition for preventing and treating corneal diseases or conjunctival diseases, containing a maple leaf extract as an active ingredient. The maple leaf extract exhibits an effect of inhibiting hyperemia in the eyeball in which hyperemia has been induced and an effect of inhibiting angiogenesis in the eyeball in which corneal damage has been induced, thus being effectively used in a pharmaceutical composition for preventing and treating corneal diseases or conjunctival diseases.

Abstract: A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a metal support structure in place of the substrate. In one aspects the step of fabricating a metal support structure in place of the substrate includes the step of plating the metal support structure using at least one of electroplating and electro-less plating. In one aspect, the vertical structure is a GaN-based vertical structure, the crystal substrate includes sapphire and the metal support structure includes copper. Advantages of the invention include fabricating vertical structure LEDs suitable for mass production with high reliability and high yield.

Abstract: A vertical topology device includes a conductive adhesion structure having a first surface and a second surface, a conductive thick film support formed on the first surface, and a semiconductive device having an upper electrical contact and located over the conductive adhesion layer. Electrical current can flow between the conductive thick film and the upper electrical contact.

Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

Abstract: A method of forming a light emitting diode includes forming a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. A scribe line is formed on the substrate for separating the diodes on the substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

Abstract: A vacuum cleaner includes both a main dust separation unit and a secondary dust separation unit. One of the dust separation units is provided on a main body of the vacuum cleaner, and the other dust separation unit is provided on a removable dust collection unit that is mountable on the main body.

Abstract: A vacuum cleaner includes both a main dust separation unit and a secondary dust separation unit. One of the dust separation units is provided on a main body of the vacuum cleaner, and the other dust separation unit is provided on a removable dust collection unit that is mountable on the main body.

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal techniques. Trenches that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive coupled plasma reactive ion etching. A first support structure is attached to the semiconductor layers. The hard substrate is then removed, beneficially by laser lift off. A second supporting structure, preferably conductive, is substituted for the hard substrate and the first supporting structure is removed. Individual devices are then diced, beneficially by etching through the second supporting structure. A protective photo-resist layer can protect the semiconductor layers from the attachment of the first support structure.