Abstract: A display device including: a power supply configured to supply a first power, a second power, and a third power to a first power line, a second power line, and a third power line, respectively, wherein each of the first power, the second power and the third power varies in voltage level during one frame period; and pixels connected to at least one of scan lines and data lines, and connected to a common control line, the first power line, the second power line, and the third power line, wherein the pixels simultaneously emit light when the second power is changed to a low level, and a number of times the second power is changed to the low level during the one frame period changes in response to an image refresh rate.

Abstract: The present invention relates to a heteroaryl derivative compound and a use thereof. Since the heteroaryl derivative of the present invention exhibits excellent inhibitory activity against EGFR, the heteroaryl derivative can be usefully used as a therapeutic agent for EGFR-associated diseases.

Abstract: A method of manufacturing a semiconductor device includes forming a base layer on a substrate. A structure layer is Conned on the base layer. The structure layer includes at least one material layer. A structure pattern is formed on the base layer. The structure pattern includes a first trench extending in a first direction and a second trench having a cross portion extending in a second direction that is perpendicular to the first direction. The second trench is connected to the first trench. The structure pattern further includes a base pattern having a recess portion recessed downward from a surface of the base layer at the cross portion of the second trench.

Abstract: A method of manufacturing a semiconductor device includes forming a base layer on a substrate. A structure layer is Conned on the base layer. The structure layer includes at least one material layer. A structure pattern is formed on the base layer. The structure pattern includes a first trench extending in a first direction and a second trench having a cross portion extending in a second direction that is perpendicular to the first direction. The second trench is connected to the first trench. The structure pattern further includes a base pattern having a recess portion recessed downward from a surface of the base layer at the cross portion of the second trench.

Abstract: A method of manufacturing a semiconductor device includes forming a base layer on a substrate. A structure layer is formed on the base layer. The structure layer includes at least one material layer. A structure pattern is formed on the base layer. The structure pattern includes a first trench extending in a first direction and a second trench having a cross portion extending in a second direction that is perpendicular to the first direction. The second trench is connected to the first trench. The structure pattern further includes a base pattern having a recess portion recessed downward from a surface of the base layer at the cross portion of the second trench.

Abstract: A method of manufacturing a semiconductor device includes forming a base layer on a substrate. A structure layer is formed on the base layer. The structure layer includes at least one material layer. A structure pattern is formed on the base layer. The structure pattern includes a first trench extending in a first direction and a second trench having a cross portion extending in a second direction that is perpendicular to the first direction. The second trench is connected to the first trench. The structure pattern further includes a base pattern having a recess portion recessed downward from a surface of the base layer at the cross portion of the second trench.