Abstract: An embodiment of the present specification provides a method for preparing a catalyst for preparing a carbon nanotube, comprising: (a) dissolving a main catalyst precursor, a support precursor, a cocatalyst precursor and a precipitation inhibitor in a solvent to prepare a precursor solution; and (b) pyrolyzing the precursor solution by spraying the precursor solution into a reactor, wherein a mole fraction of the precipitation inhibitor to the cocatalyst precursor is 0.1 to 1.5.

Abstract: A vehicle seat reinforcement device includes a leg portion mounted on a floor panel, a seat cushion frame slidably mounted on the leg portion, and a load reinforcing structure connected between the leg portion and the seat cushion frame, wherein when a seat belt anchorage load is transferred to the seat cushion frame, the seat cushion frame is locked to the leg portion by the load reinforcing structure.

Abstract: An elastic material vibration test apparatus includes a lower support plate having an upper surface on which an elastic material to be tested is placed, an upper support plate disposed above the lower support plate to be spaced apart from the lower support plate, a pillar connecting the lower support plate and the upper support plate, a pressing rod configured to pass through the upper support plate and ascend and descend in a vertical direction, an air bearing installed on the upper support plate and supporting an outer surface of the pressing rod in a non-contact state, a pressing plate coupled to a lower end of the pressing rod to press an upper surface of the elastic material, and one or more weights coupled to the pressing rod above the air bearing.

Abstract: An adhesive film includes a porous metal layer having a plurality of pores therein, a first adhesive layer on one side of the porous metal layer, an adhesive substance at least partially filling the pores of the porous metal layer, and a plurality of first thermal conductive members distributed in the first adhesive layer.

Abstract: An adhesive film includes a porous metal layer having a plurality of pores therein, a first adhesive layer on one side of the porous metal layer, an adhesive substance at least partially filling the pores of the porous metal layer, and a plurality of first thermal conductive members distributed in the first adhesive layer.

Abstract: An elastic material vibration test apparatus includes a lower support plate having an upper surface on which an elastic material to be tested is placed, an upper support plate disposed above the lower support plate to be spaced apart from the lower support plate, a pillar connecting the lower support plate and the upper support plate, a pressing rod configured to pass through the upper support plate and ascend and descend in a vertical direction, an air bearing installed on the upper support plate and supporting an outer surface of the pressing rod in a non-contact state, a pressing plate coupled to a lower end of the pressing rod to press an upper surface of the elastic material, and one or more weights coupled to the pressing rod above the air bearing.

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

Abstract: A flip chip bonding method includes obtaining a die including a first substrate and an adhesive layer on the first substrate; bonding the die to a second substrate different from the first substrate; and curing the adhesive layer. The curing the adhesive layer includes heating the second substrate to melt the adhesive layer, and providing the adhesive layer and the second substrate with air having pressure greater than atmospheric pressure.

Abstract: An adhesive film includes a porous metal layer having a plurality of pores therein, a first adhesive layer on one side of the porous metal layer, an adhesive substance at least partially filling the pores of the porous metal layer, and a plurality of first thermal conductive members distributed in the first adhesive layer.

Abstract: A flip chip bonding method includes obtaining a die including a first substrate and an adhesive layer on the first substrate; bonding the die to a second substrate different from the first substrate; and curing the adhesive layer. The curing the adhesive layer includes heating the second substrate to melt the adhesive layer, and providing the adhesive layer and the second substrate with air having pressure greater than atmospheric pressure.

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Abstract: A semiconductor package includes a substrate, a plurality of semiconductor chips stacked on the substrate, and a plurality of bonding layers bonded to lower surfaces of the plurality of semiconductor chips. The plurality of bonding layers may be divided into a plurality of groups, each having different physical properties depending on a distance from the substrate.

Abstract: A semiconductor package includes a first semiconductor chip including a first through-silicon via (TSV), a second semiconductor chip stacked on the first semiconductor chip and including a second TSV, and a non-conductive film formed between the first semiconductor chip and the second semiconductor chip. The non-conductive film includes two layers having different viscosities.

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

Abstract: A semiconductor package includes a substrate, a plurality of semiconductor chips stacked on the substrate, and a plurality of bonding layers bonded to lower surfaces of the plurality of semiconductor chips. The plurality of bonding layers may be divided into a plurality of groups, each having different physical properties depending on a distance from the substrate.

Abstract: Bi-directional camera modules and flip chip bonders including the same are provided. The module includes a circuit board on which an upper sensor and a lower sensor are mounted, an upper lens and a lower lens disposed on the upper sensor and under the lower sensor, respectively, and a housing fixing the upper lens and the lower lens spaced apart from the upper sensor and the lower sensor, respectively. The housing surrounds the circuit board. The housing has a plurality of inlets and an outlet through which air flows, and the housing has an air passage connected from the inlets to the outlet via a space between lower lens and the lower sensor.