Abstract: A semiconductor includes a substrate, first and second active patterns that are on the substrate and extend in a first horizontal direction, a first gate electrode that is on the first active pattern and extends in a second horizontal direction, a second gate electrode that is on the second active pattern and extends in the second horizontal direction, an active cut trench that extends in the second horizontal direction and is between the first gate electrode and the second gate electrode, an active cut including a first layer and a second layer on the first layer, a first source/drain region that is between the first gate electrode and the active cut and is on the first active pattern, and a first source/drain contact that is on the first source/drain region, where at least a part of the first source/drain contact overlaps the first layer in a vertical direction.

Abstract: An article withdrawing system for withdrawing articles held in a packing box, the upper surface of which is opened. A first stage holds the packing box carried with the opened upper surface and reverses the packing box so that the articles held in the packing box falls down. A second stage supports and holds the falling-down articles. The first stage includes a support unit supporting and moving the packing box upward and downward, a box holding frame in which the support unit is mounted, a linear movement frame to which the box holding frame is rotatably coupled, a main frame in which the linear movement frame is coupled and supported to be linearly moved and is located and supported on the ground, and a first rotation driving mechanism disposed in the linear movement frame and for rotating and driving the box holding frame.

Abstract: According to an embodiment, an anode active material included in an anode material of a battery comprises a carbon material and a silicon structure attached to the carbon material. The silicon structure includes a silicon nanoparticle, a metal thin film formed on a surface of the silicon nanoparticle, and graphene coated on a surface of the metal thin film.

Abstract: The present invention relates to a multi-function electronic device having a memristor and a memcapacitor and a method for manufacturing the same. The multi-function electronic device having a memristor and a memcapacitor has a laminated structure of a first insulating layer comprising an organic material/an active layer/a second insulating layer comprising an organic material, and thus has a resistance and capacitance varying with the applied voltage.

Abstract: An exemplary method of preparing nitrogen-doped graphene whereby it is possible to synthesize graphene having an improved surface coverage and a uniform single layer, and to prepare high quality graphene in a large area. In addition, an aromatic compound containing nitrogen can be used as a carbon source and nitrogen-doped graphene can be thus synthesized as nitrogen doped in the synthesis process. It is possible to control the electrical properties of graphene depending on the nitrogen doping.

Abstract: A method for synthesizing a multilayer graphene is provided. Specifically, the multilayer graphene can be produced by performing a step of forming a catalytic metal layer on a substrate, a step of heat-treating the catalytic metal layer on the substrate while supplying methane gas, and a step of synthesizing a multilayer graphene on the heat-treated catalytic metal layer. As described above, the multilayer graphene having a large area can be grown directly on a substrate, by heat-treating the catalytic metal layer using methane gas, prior to the step of synthesis of graphene. In addition, as the the number of layer of the multilayer graphene can be controlled by changing the synthesis time of the multilayer graphene, the multilayer graphene with the desired number of layers can be easily produced.

Abstract: The present invention relates to a multi-function electronic device having a memristor and a memcapacitor and a method for manufacturing the same. The multi-function electronic device having a memristor and a memcapacitor has a laminated structure of a first insulating layer comprising an organic material/an active layer/a second insulating layer comprising an organic material, and thus has a resistance and capacitance varying with the applied voltage.

Abstract: An exemplary method of preparing nitrogen-doped graphene whereby it is possible to synthesize graphene having an improved surface coverage and a uniform single layer, and to prepare high quality graphene in a large area. In addition, an aromatic compound containing nitrogen can be used as a carbon source and nitrogen-doped graphene can be thus synthesized as nitrogen doped in the synthesis process. It is possible to control the electrical properties of graphene depending on the nitrogen doping.

Abstract: A method for synthesizing a multilayer graphene is provided. Specifically, the multilayer graphene can be produced by performing a step of forming a catalytic metal layer on a substrate, a step of heat-treating the catalytic metal layer on the substrate while supplying methane gas, and a step of synthesizing a multilayer graphene on the heat-treated catalytic metal layer. As described above, the multilayer graphene having a large area can be grown directly on a substrate, by heat-treating the catalytic metal layer using methane gas, prior to the step of synthesis of graphene. In addition, as the the number of layer of the multilayer graphene can be controlled by changing the synthesis time of the multilayer graphene, the multilayer graphene with the desired number of layers can be easily produced.

Abstract: A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide.

Abstract: A resistive random access memory (ReRAM) includes a first electrode, a threshold switching layer formed over the first electrode and configured to perform a switching operation according to an applied voltage, a resistance change layer formed over the threshold switching layer, and configured to perform a resistance change operation, and a second electrode formed over the resistance change layer, wherein the threshold switching layer comprises a stoichiometric transition oxide while the resistance change layer comprises a non-stoichiometric transition metal oxide.